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Results 1 to 25 of 418

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Ga sublattice defects in (Ga, Mn)As: Thermodynamical and kinetic trendsTUOMISTO, F; PENNANEN, K; SAARINEN, K et al.Physical review letters. 2004, Vol 93, Num 5, pp 055505.1-055505.4, issn 0031-9007Article

Lattice creation and annihilation of LaMnO3+δ caused by nonstoichiometry changeMIYOSHI, Shogo; HONG, Jeong-Oh; YASHIRO, Keiji et al.Solid state ionics. 2002, Vol 154-5, pp 257-263, issn 0167-2738, 7 p.Conference Paper

Nonstoichiometry and defect structure of Mn-doped BaTiO3-δLEE, D.-K; YOO, H.-I; BECKER, K. D et al.Solid state ionics. 2002, Vol 154-5, pp 189-193, issn 0167-2738, 5 p.Conference Paper

The nature of micropipes in 6H-SiC single crystalsSTRUNK, Horst P; DORSCH, Wolfgang; HEINDL, Jürgen et al.Advanced engineering materials (Print). 2000, Vol 2, Num 6, pp 386-389, issn 1438-1656Article

Mechanism of yielding in dislocation-free crystals at finite temperatures-Part I. TheoryKHANTHA, M; VITEK, V.Acta materialia. 1997, Vol 45, Num 11, pp 4675-4686, issn 1359-6454Article

Theory of bubble growth in crystals under stressBURTON, B.Materials science and technology. 2001, Vol 17, Num 4, pp 399-402, issn 0267-0836Article

The engineering of intrinsic point defects in silicon wafers and crystalsFALSTER, R; VORONKOV, V. V.Materials science & engineering. B, Solid-state materials for advanced technology. 2000, Vol 73, Num 1-3, pp 87-94, issn 0921-5107Conference Paper

A finite difference calculation of vacancy migration under non-steady state conditionsZANG, D; MCLELLAN, R. B.Acta materialia. 1999, Vol 47, Num 5, pp 1671-1683, issn 1359-6454Article

Modelling of vacancy diffusion and pore formation during parabolic oxide growthBOBETH, M; GUTKIN, M; POMPE, W et al.Physica status solidi. A. Applied research. 1998, Vol 165, Num 1, pp 165-184, issn 0031-8965Conference Paper

A finite element method for simulating interface motion-I. Migration of phase and grain boundariesSUN, B; SUO, Z; YANG, W et al.Acta materialia. 1997, Vol 45, Num 5, pp 1907-1915, issn 1359-6454Article

Enhanced generation of thermal donors in silicon single crystals grown in a nitrogen atmosphereBRINKEVICH, D. I; VABISHCHEVICH, S. A.Inorganic materials. 1996, Vol 32, Num 10, pp 1013-1015, issn 0020-1685Article

Dispersive processes in the annealing of light- and thermally-induced dangling bonds in a-Si:HTAKEDA, K; HIKITA, H; KIMURA, Y et al.Journal of non-crystalline solids. 1996, Vol 198200, pp 486-489, issn 0022-3093, 1Conference Paper

Dislocation multiplication in F.C.C. metals at presence of high shear stressZARETSKY, E.Acta metallurgica et materialia. 1995, Vol 43, Num 1, pp 193-198, issn 0956-7151Article

Dislocation motion in slip-band formationKOLUPAEVA, S. N; VIKHOR', N. A; KOROTAEVA, N. V et al.Physics of metals and metallography. 1995, Vol 80, Num 4, pp 393-396, issn 0031-918XArticle

Morphology change of oxide precipitates in CZ silicon during two-step annealingSUEOKA, K; IKEDA, N; YAMAMOTO, T et al.Journal of the Electrochemical Society. 1994, Vol 141, Num 12, pp 3588-3593, issn 0013-4651Article

A computational concept for the kinetics of defects in anisotropic materialsKOLLING, S; MUELLER, R; GROSS, D et al.Computational materials science. 2003, Vol 26, pp 87-94, issn 0927-0256, 8 p.Conference Paper

Reduction of Te-rich phases in Cd1-xZnxTe (x = 0.04) crystalsLI YUJIE; JIE WANQI.Journal of physics. Condensed matter (Print). 2002, Vol 14, Num 43, pp 10183-10191, issn 0953-8984, 9 p.Article

Formation and annealing of defects during high-temperature processing of ion-implanted epitaxial silicon: the role of dopant implantsGIRI, P. K; GALVAGNO, G; FERLA, A. L et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2000, Vol 71, Num 1-3, pp 186-191, issn 0921-5107Conference Paper

Mass transport and the reduction of threading dislocation in GaNNITTA, S; KARIYA, M; KASHIMA, T et al.Applied surface science. 2000, Vol 159-60, pp 421-426, issn 0169-4332Conference Paper

Thermally activated motion of domain wall in a crystal with a small degree of discretenessDMITRIEV, S. V; SHIGENARI, T; ABE, K et al.Computational materials science. 1998, Vol 11, Num 3, pp 227-232, issn 0927-0256Article

Annihilation process of new donors in n-type carbon-rich CZ siliconZHU, S.Materials transactions - JIM. 1996, Vol 37, Num 8, pp 1438-1442, issn 0916-1821Article

Kinetic mechanisms for production of dislocation pile-upsMAREEVA, O. V; SARAFANOV, G. F; NAGORNYKH, S. N et al.Physics of metals and metallography. 1993, Vol 75, Num 6, pp 597-600, issn 0031-918XArticle

Correlation between the structural defects induced by ball-milling of Pb3O4 and the structure of PbO yielded from its thermal decompositionREAL, C; ALCALA, M. D; CRIADO, J. M et al.Solid state ionics. 1993, Vol 63-65, pp 702-706, issn 0167-2738Conference Paper

Ab initio study of the annealing of vacancies and interstitials in cubic SiC: Vacancy-interstitial recombination and aggregation of carbon interstitialsBOCKSTEDTE, Michel; MATTAUSCH, Alexander; PANKRATOV, Oleg et al.Physical review B. Condensed matter and materials physics. 2004, Vol 69, Num 23, pp 235202.1-235202.13, issn 1098-0121Article

First-principles calculation of defect-formation energies in the Y2(Ti, Sn, Zr)2O7 pyrochlorePANERO, Wendy R; STIXRUDE, Lars; EWING, Rodney C et al.Physical review B. Condensed matter and materials physics. 2004, Vol 70, Num 5, pp 054110.1-054110.11, issn 1098-0121Article

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