Optical properties of Gan/AlN quantum dots grown by molecular beam epitaxyNEOGI, A.Proceedings - Electrochemical Society. 2003, pp 188-195, issn 0161-6374, isbn 1-56677-391-1, 8 p.Conference Paper

High energy and spatial resolution EELS from GaNARSLAN, I; OGUT, S; BROWNING, N. D et al.Proceedings - Electrochemical Society. 2003, pp 238-243, issn 0161-6374, isbn 1-56677-391-1, 6 p.Conference Paper

Pitting and porous layer formation on n-InP anodesO'DWYER, C; BUCKLEY, D. N; SERANTONI, M et al.Proceedings - Electrochemical Society. 2003, pp 136-151, issn 0161-6374, isbn 1-56677-391-1, 16 p.Conference Paper

Influence of a low composition IN_XGA_1-XN/GAN superlattice on the optical properties of blue and green IN_XGA_1-XN based ledsRAMER, J. C; FLORESCU, D. I; LEE, D. S et al.Proceedings - Electrochemical Society. 2003, pp 45-56, issn 0161-6374, isbn 1-56677-391-1, 12 p.Conference Paper

Growth and characterization of high-Ge content SiGe virtual substratesERDTMANN, M; CARROLL, M; VINEIS, C. J et al.Proceedings - Electrochemical Society. 2003, pp 106-117, issn 0161-6374, isbn 1-56677-391-1, 12 p.Conference Paper

Effect of the intermetallic compounds on the joint strength of the optical moduleKIM, N. K; KIM, K. S; KIM, N. H et al.Proceedings - Electrochemical Society. 2003, pp 80-86, issn 0161-6374, isbn 1-56677-391-1, 7 p.Conference Paper

Mg doping concentration influenced by the polarity of the GaN layer in InGaN/GaN superlattice structuresLAI, Yen-Lin; CHEN, Regime; LIU, Chuan-Pu et al.Proceedings - Electrochemical Society. 2003, pp 174-178, issn 0161-6374, isbn 1-56677-391-1, 5 p.Conference Paper

Localized quantum state luminescence from wide bandgap ZnS and GaN thin filmsSHEPHERD, Nigel; KALE, Ajay; GLASS, William et al.Proceedings - Electrochemical Society. 2003, pp 244-269, issn 0161-6374, isbn 1-56677-391-1, 26 p.Conference Paper

Electronic structure of GaNP: Insights from optical studiesBUYANOVA, I. A; CHEN, W. M; TU, C. W et al.Proceedings - Electrochemical Society. 2003, pp 390-399, issn 0161-6374, isbn 1-56677-391-1, 10 p.Conference Paper

Ferromagnetism in Mn- and Sn- doped ZnO films grown by pulsed laser depositionIVILL, M; NORTON, D. P; HEBARD, A. F et al.Proceedings - Electrochemical Society. 2003, pp 375-383, issn 0161-6374, isbn 1-56677-391-1, 9 p.Conference Paper

UHV-EC studies of wet cleaning procedures for GaAs substrates for electrodepositionWARD, L. C; MUTHUVEL, M; STICKNEY, J. L et al.Proceedings - Electrochemical Society. 2003, pp 152-163, issn 0161-6374, isbn 1-56677-391-1, 12 p.Conference Paper

Growth and characterization of InGaN quantum dots in InGaN/GaN superlatticesLIU, Chuan-Pu; CHEN, Regime; LAI, Yan-Lin et al.Proceedings - Electrochemical Society. 2003, pp 16-20, issn 0161-6374, isbn 1-56677-391-1, 5 p.Conference Paper

Fabrication of n-TiO₂ thin films by SPD and electrooxidation methods for efficient photosplitting of waterSMITH, Shayna L; KHAN, Shahed U. M.Proceedings - Electrochemical Society. 2003, pp 87-96, issn 0161-6374, isbn 1-56677-391-1, 10 p.Conference Paper

High efficiency nitride leds for use in solid state lighting applicationsFISCHER, A. J; KOLESKE, D. D; ALLERMAN, A. A et al.Proceedings - Electrochemical Society. 2003, pp 182-187, issn 0161-6374, isbn 1-56677-391-1, 6 p.Conference Paper

Growth of HgSe by electrochemical atomic layer epitaxy (EC-ALE)MATHE, M. K; COX, S. M; HAPPEK, U et al.Proceedings - Electrochemical Society. 2003, pp 73-79, issn 0161-6374, isbn 1-56677-391-1, 7 p.Conference Paper

Development of InGaAsN-based 1310 nm VCSELsCHANG, Y.-L; TAKEUCHI, T; SONG, Y.-K et al.Proceedings - Electrochemical Society. 2003, pp 33-44, issn 0161-6374, isbn 1-56677-391-1, 12 p.Conference Paper

In-situ chemical surface treatments for the removal of AlN/SiC interfacial contaminationSTODILKA, D. O; GILA, B. P; ABERNATHY, C. R et al.Proceedings - Electrochemical Society. 2003, pp 350-354, issn 0161-6374, isbn 1-56677-391-1, 5 p.Conference Paper

Surface state characterization methods for SiO₂ on 4H-SiCLAROCHE, J. R; KIM, J; JOHNSON, J. W et al.Proceedings - Electrochemical Society. 2003, pp 282-291, issn 0161-6374, isbn 1-56677-391-1, 10 p.Conference Paper

Synthesis and characterization of ferromagnetic AlN and AlGaN layersFRAZIER, R. M; THALER, G. T; ZAVADA, J. M et al.Proceedings - Electrochemical Society. 2003, pp 384-389, issn 0161-6374, isbn 1-56677-391-1, 6 p.Conference Paper

Development of high speed 850 nm VCSELS for OC-192 applicationKUO, H. C; CHANG, Y. S; HSEUH, T. H et al.Proceedings - Electrochemical Society. 2003, pp 26-32, issn 0161-6374, isbn 1-56677-391-1, 7 p.Conference Paper

Optimization of GaMnN growth conditions for novel spintronic applicationsTHALER, G. T; FRAZIER, R. M; ABERNATHY, C. R et al.Proceedings - Electrochemical Society. 2003, pp 338-343, issn 0161-6374, isbn 1-56677-391-1, 6 p.Conference Paper

High performance wide-bandgap photonic and eleetronic devices grown by MBEDABIRAN, A. M; OSINSKY, A; HERTOG, B et al.Proceedings - Electrochemical Society. 2003, pp 179-181, issn 0161-6374, isbn 1-56677-391-1, 3 p.Conference Paper

GaN power rectifiers and field-effect transistors on free-standing GaN substratesIROKAWA, Y; LUO, B; PARK, Y. J et al.Proceedings - Electrochemical Society. 2003, pp 306-320, issn 0161-6374, isbn 1-56677-391-1, 15 p.Conference Paper

Dramatic improvements in AlGaN/GaN HEMT device isolation characteristics after UV-ozone pre-treatmentMOSER, N; FITCH, R. C; PEARTON, S. J et al.Proceedings - Electrochemical Society. 2003, pp 57-67, issn 0161-6374, isbn 1-56677-391-1, 11 p.Conference Paper

Crystal quality determination of wide bandgap materials using X-ray topographyFEICHTINGER, Petra; POUST, Benjamin; WORMINGTON, Matthew et al.Proceedings - Electrochemical Society. 2003, pp 164-173, issn 0161-6374, isbn 1-56677-391-1, 10 p.Conference Paper