An analytic study of double-channel single stripe lasersKUMAR, T.GEC journal of research. 1986, Vol 4, Num 4, pp 282-287, issn 0264-9187Article

Dependence of chirp in injection lasers on temporal optical pulse shapeCARROLL, J. E; WHITE, I. H; GALLAGHER, D. F. G et al.IEE proceedings. Part J. Optoelectronics. 1986, Vol 133, Num 4, pp 279-282, issn 0267-3932Article

High-power quasi-cw monolithic laser diode linear arraysHARNAGEL, G. L; CROSS, P. S; SCIFRES, D. R et al.Applied physics letters. 1986, Vol 49, Num 21, pp 1418-1419, issn 0003-6951Article

Japanese diode ― laser suppliers target short ― wavelength operationFORREST, G.Laser focus (1983). 1986, Vol 22, Num 10, pp 100-102, issn 0740-2511, 2 p.Article

Self-sustained and synchronized optical pulsations of double-contacted MCRW laser diodesHONSBERG, M; HARTH, W.International journal of electronics. 1986, Vol 60, Num 1, pp 47-50, issn 0020-7217Article

Two-dimensional device simulator for laser diodes: hiladiesYAMAGUCHI, K; OHTOSHI, T; KANAI-NAGAOKA, C et al.Electronics Letters. 1986, Vol 22, Num 14, pp 740-741, issn 0013-5194Article

Thermal model of laser diode arraysNAKWASKI, W.Electronics Letters. 1986, Vol 22, Num 22, pp 1169-1170, issn 0013-5194Article

A proposal for quiet photon streams from injection lasersCARROLL, J. E.Optica acta. 1986, Vol 33, Num 7, pp 909-918, issn 0030-3909Article

Long-wavelength diode lasers: commercial trends and technical developmentKAUFMAN, H.Laser focus (1983). 1986, Vol 22, Num 10, pp 96-98, issn 0740-2511, 2 p.Article

R & D on surface-emitting diode lasersWALPOLE, J. N.Laser focus (1983). 1987, Vol 23, Num 9, pp 66-74, issn 0740-2511, 5 p.Article

In situ characterization of laser diodes from wide-band electrical noise measurementsANDREKSON, P. A; ANDERSSON, P; ALPING, A et al.Journal of lightwave technology. 1986, Vol 4, Num 7, pp 804-812, issn 0733-8724Conference Paper

Linewidth of saturated semiconductor laser diodesARNAUD, J.Electronics Letters. 1988, Vol 24, Num 2, pp 116-117, issn 0013-5194Article

Direct supermode analysis of phase-locked diode laser arraysHAYATA, K; KOSHIBA, M.Electronics Letters. 1987, Vol 23, Num 18, pp 935-936, issn 0013-5194Article

High-brightness, high-efficiency, single-quantum-well laser diode arrayWELCH, D. F; CARDINAL, M; STREIFER, W et al.Electronics Letters. 1987, Vol 23, Num 23, pp 1240-1241, issn 0013-5194Article

Photon statistical properties of visible laser diodesBROWN, R. G. W; GRANT, R. S.Review of scientific instruments. 1987, Vol 58, Num 6, pp 928-931, issn 0034-6748Article

Quasi-instantaneous (Α20 ps) phase locking in single-lobe Y-coupled laser diode arraysDEFREEZ, R. K; ELLIOTT, R. A; HARTNETT, K et al.Electronics Letters. 1987, Vol 23, Num 11, pp 589-590, issn 0013-5194Article

V-grooved inner-stripe laser diodes on a p-type substrate operating over 100mW at 1.5μm wavelengthHORIKAWA, H; OSHIBA, S; MATOBA, A et al.Applied physics letters. 1987, Vol 50, Num 7, pp 374-376, issn 0003-6951Article

A self-consistent model of the lateral behavior of a twin-stripe injection laserKUMAR, T; ORMONDROYD, R. F; ROZZI, T. E et al.IEEE journal of quantum electronics. 1986, Vol 22, Num 10, pp 1975-1985, issn 0018-9197Article

Five watt continuous-wave AIGaAsd laser diodesHARNAGEL, G. L; SCIFRES, D. R; KUNG, H. H et al.Electronics Letters. 1986, Vol 22, Num 11, pp 605-606, issn 0013-5194Article

Wavemeter for lead-salt diode laser calibrationEVANS, W. J; LAMBERT, D. K.Applied optics. 1986, Vol 25, Num 17, pp 2867-2868, issn 0003-6935Article

Improved amorphous-silicon photoreceptor for diode laser beam printerKUDOH, M; NAKANO, M; NAKAYAMA, Y et al.Proceedings of the society for information display. 1987, Vol 28, Num 1, pp 75-79, issn 0734-1768Article

Optical bistability in semiconductor injection lasersMC INERNEY, J. G; HEFFERMAN, D. M.IEE proceedings. Part J. Optoelectronics. 1987, Vol 134, Num 1, pp 41-50, issn 0267-3932Article

Proposal of a potential controlled low threshold laserYAMADA, M; OMI, K; NASHIDA, Y et al.Transactions of the Institute of Electronics and Communication Engineers of Japan. Section E. 1987, Vol 70, Num 3, pp 178-180, issn 0387-236XArticle

Effect of active layer thickness on differential quantum efficiency of 1.55 μ InGaAsP buried crescent injection lasersCHENG, W. H; RENNER, D.Applied physics letters. 1986, Vol 49, Num 20, pp 1322-1324, issn 0003-6951Article

Synchronization bandwidth of Q-switched double-contacted injection lasersGROTHE, H; HARTH, W.International journal of electronics. 1986, Vol 60, Num 1, pp 51-56, issn 0020-7217Article