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CIRCUIT SIMULATION AT GTE AUTOMATIC ELECTRICLAHA A; SCHAEFFER R; SMART D et al.1982; GTE AUTOM. ELECTR. WORLD-WIDE COMMUN. J.; ISSN 0273-141X; USA; DA. 1982; VOL. 20; NO 5; PP. 145-150; BIBL. 9 REF.Article

POWER STABILIZER DESIGN USING ROOT LOCUS METHODS.BOLLINGER K; LAHA A; HAMILTON R et al.1975; I.E.E.E. TRANS. POWER APPAR. SYST.; U.S.A.; DA. 1975; VOL. 94; NO 5; PP. 1484-1488; BIBL. 7 REF.Article

Designing fuzzy rule based classifier using self-organizing feature map for analysis of multispectral satellite imagesPAL, N. R; LAHA, A; DAS, J et al.International journal of remote sensing (Print). 2005, Vol 26, Num 10, pp 2219-2240, issn 0143-1161, 22 p.Article

Investigation of relaxor behavior in Pb(Mg1/3Nb2/3)O3-PbTiO3 thin filmsKRUPANIDHI, S. B; LAHA, A.Ferroelectrics (Print). 2004, Vol 306, pp 17-27, issn 0015-0193, 11 p.Article

Study of relaxor-like behaviour of laser ablated (Pb, La)Tio3thin filmsVENKATESWARLU, P; LAHA, A; KRUPANIDHI, S. B et al.Solid state communications. 2003, Vol 127, Num 3, pp 247-251, issn 0038-1098, 5 p.Article

Introducing crystalline rare-earth oxides into Si technologiesOSTEN, H. J; LAHA, A; CZERNOHORSKY, M et al.Physica status solidi. A, Applications and materials science (Print). 2008, Vol 205, Num 4, pp 695-707, issn 1862-6300, 13 p.Article

Reversible and irreversible switching processes in pure and lanthanum modified lead zirconate thin filmsBHARADWAJA, S. S. N; LAHA, A; HALDER, S et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 94, Num 2-3, pp 218-222, issn 0921-5107Article

Pulsed excimer laser ablation growth and characterization of Ba(Sn0.1Ti0.9)O3 thin filmsHALDER, S; VICTOR, P; LAHA, A et al.Solid state communications. 2002, Vol 121, Num 6-7, pp 329-332, issn 0038-1098Article

Silicon in functional epitaxial oxides : A new group of nanostructuresFISSEL, A; LAHA, A; BUGIEL, E et al.Microelectronics journal. 2008, Vol 39, Num 3-4, pp 512-517, issn 0959-8324, 6 p.Conference Paper

Downscaling of defect-passivated Gd2O3 thin films on p-Si(0 0 1) wafers grown by H2O-assisted atomic layer depositionRANJITH, R; LAHA, A; BUGIEL, E et al.Semiconductor science and technology. 2010, Vol 25, Num 10, issn 0268-1242, 105001.1-105001.5Article

MBE-grown Si and Si1-xGex quantum dots embedded within epitaxial Gd2O3 on Si(111) substrate for floating gate memory deviceMANNA, S; ALUGURI, R; KATIYAR, A et al.Nanotechnology (Bristol. Print). 2013, Vol 24, Num 50, issn 0957-4484, 505709.1-505709.9Article

Electronic structure at interfaces of cubic Gd2O3 with embedded Si nanocrystalsBADYLEVICH, M; SHAMUILIA, S; AFANAS'EV, V. V et al.Microelectronic engineering. 2008, Vol 85, Num 12, pp 2382-2384, issn 0167-9317, 3 p.Conference Paper

Single-crystalline Si grown on single-crystalline Gd2O3 by modified solid-phase epitaxyFISSEL, A; DARGIS, R; BUGIEL, E et al.Thin solid films. 2010, Vol 518, Num 9, pp 2546-2550, issn 0040-6090, 5 p.Conference Paper

Crystal structure and strain state of molecular beam epitaxial grown Gd2O3 on Si(111) substrates : a diffraction studyWANG, J. X; LAHA, A; FISSEL, A et al.Semiconductor science and technology. 2009, Vol 24, Num 4, issn 0268-1242, 045021.1-045021.6Article

Epitaxial growth of Gd2O3 on surfactant-mediated grown Ge films on Si(0 0 1 ) substratesWIETLER, T. F; LAHA, A; BUGIEL, E et al.Solid-state electronics. 2009, Vol 53, Num 8, pp 833-836, issn 0038-1101, 4 p.Conference Paper

Integration of functional epitaxial oxides into silicon : from high-k application to nanostructuresOSTEN, H. J; CZERNOHORSKY, M; DARGIS, R et al.Microelectronic engineering. 2007, Vol 84, Num 9-10, pp 2222-2225, issn 0167-9317, 4 p.Conference Paper

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