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DETERMINATION OF THE BULK CONDUCTIVITY OF CONDUCTIVE BASE PAPERSJOSEFOWICZ JY; LANDHEER D.1981; TAPPI, TECH. ASSOC. PULP PAP. IND.; ISSN 0039-8241; USA; DA. 1981; VOL. 64; NO 2; PP. 116-118; BIBL. 5 REF.Article

INTERPRETATION OF SURFACE ELECTRICAL MEASUREMENTS ON CONDUCTIVE BASE PAPERS: A DISTRIBUTED RESISTANCE MODELHOWLETT W; LANDHEER D.1980; TAPPI, TECH. ASSOC. PULP PAP. IND.; ISSN 0039-8241; USA; DA. 1980; VOL. 63; NO 10; PP. 95-97Article

DETERMINATION OF THE HYDRODYNAMIC RADII OF POLY(P-ISOPROPYL ALPHA -METHYLSTYRENE) BY PHOTON CORRELATION SPECTROSCOPYLANDHEER D; SHADI LAL MALHOTRA.1981; J. MACROMOL. SCI., CHEM.; ISSN 0022-233X; USA; DA. 1981; VOL. 16; NO 7; PP. 1349-1357; BIBL. 10 REF.Article

FUNDAMENTAL ASPECTS AND TECHNOLOGICAL IMPLICATIONS OF THE SOLUBILITY CONCEPT FOR THE PREDICTION OF RUNNING PROPERTIESLANDHEER D; DACKUS AJG; KLOSTERMANN JA et al.1980; WEAR; CHE; DA. 1980-08-01; VOL. 62; NO 2; PP. 255-286; BIBL. 20 REF.Conference Paper

ELASTIC CONSTANTS OF KRYPTON SINGLE CRYSTALS DETERMINED BY BRILLOUIN SCATTERING.LANDHEER D; JACKSON HE; MCLAREN RA et al.1976; PHYS. REV., B; U.S.A.; DA. 1976; VOL. 13; NO 2; PP. 888-895; BIBL. 32 REF.Article

A high current density ion generatorLANDHEER, D; DEVITT, E. B.Photographic science and engineering. 1983, Vol 27, Num 5, pp 189-192, issn 0031-8760Article

Role of carrier equilibrium in self-consistent calculations for double barrier resonant diodesLANDHEER, D; AERS, G. C.Superlattices and microstructures. 1990, Vol 7, Num 1, pp 17-21, issn 0749-6036Article

ELASTIC CONSTANTS OF NEON SINGLE CRYSTALS DETERMINED BY BRILLOUIN SCATTERING.MCLAREN RA; KIEFTE H; LANDHEER D et al.1975; PHYS. REV., B; U.S.A.; DA. 1975; VOL. 11; NO 4; PP. 1705-1717; BIBL. 52 REF.Article

Switching times of double-barrier diodesLIU, H. C; LANDHEER, D.Superlattices and microstructures. 1988, Vol 4, Num 6, pp 701-704, issn 0749-6036Article

Electrical properties of thin anodic oxides formed on silicon in aqueous NH4OH solutionsLANDHEER, D; BARDWELL, J. A; CLARK, K. B et al.Journal of the Electrochemical Society. 1994, Vol 141, Num 5, pp 1309-1312, issn 0013-4651Article

Reibung und Verschleiss von PTFE-Compounds = Friction and wear of PTFE compoundsLANDHEER, D; MEESTERS, C. J. M.Kunststoffe. 1993, Vol 83, Num 12, pp 996-1001, issn 0023-5563Article

Effective mass in the barriers of GaAs/AlAs resonant tunneling double barrier diodesLANDHEER, D; AERS, G. C; WASILEWSKI, Z. R et al.Superlattices and microstructures. 1992, Vol 11, Num 1, pp 55-59, issn 0749-6036Article

Modeling of titanium diffusion into LiNbO3 using a depth-dependent diffusion coefficientFONTAINE, M; DELAGE, A; LANDHEER, D et al.Journal of applied physics. 1986, Vol 60, Num 7, pp 2343-2350, issn 0021-8979Article

Extremely low resistivity erbium ohmic contacts to n-type siliconJANEGA, P. L; MCCAFFREY, J; LANDHEER, D et al.Applied physics letters. 1989, Vol 55, Num 14, pp 1415-1417, issn 0003-6951, 3 p.Article

Secondary ion mass spectrometry and Auger study of lithium niobate processing for integrated opticsLANDHEER, D; MITCHELL, D. F; SPROULE, G. I et al.Journal of vacuum science and technology. A. Vacuum, surfaces, and films. 1986, Vol 4, Num 4, pp 1897-1900, issn 0734-2101Article

Resonant tunneling in Si/Si1-xGex double-barrier structuresLIU, H. C; LANDHEER, D; BUCHANAN, M et al.Applied physics letters. 1988, Vol 52, Num 21, pp 1809-1811, issn 0003-6951Article

Conductivity, dimensionality and morphology of co-sputtered Pb-Ge filmsINGLIS, A. D; LANDHEER, D; HOUGHTON, D et al.Thin solid films. 1989, Vol 173, Num 2, pp 185-197, issn 0040-6090Article

Tunneling through AlAs barriers: Γ-X transfer currentLANDHEER, D; LIU, H. C; BUCHANAN, M et al.Applied physics letters. 1989, Vol 54, Num 18, pp 1784-1786, issn 0003-6951, 3 p.Article

Mechanisms of film growth rate enhancement in anodic and cathodic corona-discharge oxiation [oxidation] processesSAYEDI, S. M; LANDHEER, D; LANDSBERGER, L. M et al.Journal of the Electrochemical Society. 1998, Vol 145, Num 8, pp 2944-2950, issn 0013-4651Article

Laser compatible waveguide electroabsorption modulator with high contrast and low operating voltage in GaAs/AlGaAsMOSS, D; LANDHEER, D; DELAGE, A et al.IEEE Photonics technology letters. 1991, Vol 3, Num 7, pp 645-647Article

Laser-compatible InGaAs/GaAs strained layer waveguide electroabsorption modulatorsMOSS, D; WILLIAMS, R. L; DION, M et al.Applied physics letters. 1991, Vol 59, Num 24, pp 3139-3141, issn 0003-6951Article

Detection of local atomic ordering in high-resolution electron images of quasiamorphous materials = Détection de la mise en ordre atomique locale dans les images électroniques en haute résolution des matériaux quasi amorphesTIMSIT, R. S; GALLERNEAULT, C; BARRY, J. C et al.Applied physics letters. 1988, Vol 53, Num 1, pp 28-30, issn 0003-6951Article

A transition diagram for plain journal bearingsLANDHEER, D; FAESSEN, J. P. M; DE GEE, A. W. J et al.Tribology transactions. 1990, Vol 33, Num 3, pp 418-424, issn 1040-2004, 7 p.Article

Surface charge spectroscopy : a novel surface science technique for measuring surface state distributions on semiconductorsKWOK, R. W. M; LAU, W. M; LANDHEER, D et al.Journal of electronic materials. 1993, Vol 22, Num 9, pp 1141-1146, issn 0361-5235Article

Structural comparison of gadolinium and lanthanum silicate films on Si(1 0 0) by HRTEM, EELS and SAEDWU, X; LANDHEER, D; QUANCE, T et al.Applied surface science. 2002, Vol 200, Num 1-4, pp 15-20, issn 0169-4332, 6 p.Article

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