Pascal and Francis Bibliographic Databases

Help

Search results

Your search

au.\*:("LANNOO M")

Document Type [dt]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Publication Year[py]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Discipline (document) [di]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Author Country

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Results 1 to 25 of 178

  • Page / 8
Export

Selection :

  • and

LOCAL FIELD EFFECTS ON THE STATIC DIELECTRIC CONSTANT OF CRYSTALLINE SEMICONDUCTORS OR INSULATORS.LANNOO M.1977; J. PHYS.; FR.; DA. 1977; VOL. 38; NO 5; PP. 473-478; ABS. FR.; BIBL. 17 REF.Article

A TIGHT-BINDING DERIVATION OF FORCE CONSTANTS: APPLICATION TO COVALENT SYSTEMSLANNOO M.1979; J. PHYS.; FRA; DA. 1979; VOL. 40; NO 5; PP. 461-466; ABS. FRE; BIBL. 20 REF.Article

A1-T2 SPLITTING FOR SUBSTITUTIONAL NITROGEN IN DIAMONDLANNOO M.1982; PHYSICAL REVIEW. B: CONDENSED MATTER; ISSN 0163-1829; USA; DA. 1982; VOL. 25; NO 4; PP. 2987-2990; BIBL. 12 REF.Article

Credibility of different calculational schemes for defects in semiconductors: their power and their limitsLANNOO, M.Journal of physics. C. Solid state physics. 1984, Vol 17, Num 18, pp 3137-3156, issn 0022-3719Article

Evidence for correlation effects in the hyperfine structure of the negative vacancy in siliconLANNOO, M.Physical review. B, Condensed matter. 1983, Vol 28, Num 5, pp 2403-2410, issn 0163-1829Article

ON THE SELF DIFFUSION ENTROPY IN SILICONLANNOO M; BOURGOIN JC.1979; SOLID STATE COMMUN.; ISSN 0038-1098; USA; DA. 1979; VOL. 32; NO 11; PP. 913-917; ABS. FRE; BIBL. 20 REF.Article

BONDS AND BAND STRUCTURE IN GEXSE1-X COMPOUNDS.LANNOO M; BENSOUSSAN M.1977; PHYS. REV., B; U.S.A.; DA. 1977; VOL. 16; NO 8; PP. 3546-3555; BIBL. 33 REF.Article

TRAVAUX DE SORTIE DES METAUX DE TRANSITION.ALLAN G; LANNOO M.1975; VIDE; FR.; DA. 1975; VOL. 30; NO 176; PP. 48-49; ABS. ANGL.; BIBL. 4 REF.Article

STRUCTURE ELECTRONIQUE DES SURFACES (110) DES SEMICONDUCTEURS DE TYPE ZINC-BLENDE PAR UNE METHODE DE LIAISONS FORTES.LOHEZ D; LANNOO M.1974; J. PHYS.; FR.; DA. 1974; VOL. 35; NO 9; PP. 647-657; ABS. ANGL.; BIBL. 21 REF.Article

Theory of deep level defects in semiconductorsLANNOO, M.Acta physica Polonica. A. 1988, Vol 73, Num 6, pp 897-908, issn 0587-4246Conference Paper

A CLUSTER PLUS EFFECTIVE MEDIUM TIGHT-BINDING STUDY OF SIOX SYSTEMSLANNOO M; ALLAN G.1978; SOLID STATE COMMUNIC.; GBR; DA. 1978; VOL. 28; NO 9; PP. 733-739; BIBL. 8 REF.Article

A TIGHT BINDING ANALYSIS OF THE STEP-DEPENDENT DENSITY OF (III) SURFACE STATES FOR COVALENT SEMICONDUCTORS.LOHEZ D; LANNOO M.1977; SURF. SCI.; NETHERL.; DA. 1977; VOL. 64; NO 1; PP. 278-292; BIBL. 27 REF.Article

FIRST-ORDER DIELECTRIC SUSCEPTIBILITIES OF TETRAHEDRALLY COORDINATED SEMICONDUCTORS.DECARPIGNY JN; LANNOO M.1976; PHYS. REV., B; U.S.A.; DA. 1976; VOL. 14; NO 2; PP. 538-549; BIBL. 46 REF.Article

INFLUENCE OF SELF-CONSISTENCY ON THE RELAXATION NEAR A VANCY ON A SURFACE IN TRANSITION METALS.ALLAN G; LANNOO M.1976; PHYS. STATUS SOLID, B; ALLEM.; DA. 1976; VOL. 74; NO 1; PP. 409-414; ABS. FR.; BIBL. 19 REF.Article

Unexplored properties of defects with triply degenerate gap states in semiconductors: the role of lattice distortionLANNOO, M.Physical review. B, Condensed matter. 1987, Vol 36, Num 17, pp 9355-9357, issn 0163-1829Article

GREEN'S-FUNCTION CALCULATION OF THE LATTICE RESPONSE NEAR THE VACANCY IN SILICONLANNOO M; ALLEN G.1982; PHYSICAL REVIEW. B: CONDENSED MATTER; ISSN 0163-1829; USA; DA. 1982; VOL. 25; NO 6; PP. 4089-4101; BIBL. 36 REF.Article

A THOMAS-FERMI DESCRIPTION OF THE SCREENING AROUND THE VACANCY IN SILICON: CHARGE STATE DEPENDENCELANNOO M; ALLAN G.1980; SOLID STATE COMMUN.; ISSN 0038-1098; USA; DA. 1980; VOL. 33; NO 3; PP. 293-297; BIBL. 8 REF.Article

BAND EFFECTS AND THE DIPOLE INTERACTION BETWEEN TWO ADATOMS ON A METAL SURFACELANNOO M; ALLAN G.1978; SOLID STATE COMMUNIC.; GBR; DA. 1978; VOL. 28; NO 9; PP. 715-717; BIBL. 7 REF.Article

CONTRIBUTION OF THE D-ELECTRON SCREENING TO THE PROPERTIES OF IMPURITIES IN TRANSITION METALS.LANNOO M; ALLAN G.1977; PHYS. STATUS SOLIDI, B; ALLEM.; DA. 1977; VOL. 81; NO 2; PP. 681-690; ABS. FR.; BIBL. 25 REF.Article

NEW METHOD FOR CALCULATING HARTREE-FOCK ENERGY-BAND STRUCTURES IN SOLIDS USING A LINEAR COMBINATION OF ATOMIC ORBITALS BASIS: APPLICATION TO DIAMOND.MAUGER A; LANNOO M.1977; PHYS. REV., B; U.S.A.; DA. 1977; VOL. 15; NO 4; PP. 2324-2336; BIBL. 39 REF.Article

A NEW MECHANISM FOR THE 2 X 1 RECONSTRUCTION OF THE SILICON <111> SURFACE.ALLAN G; LANNOO M.1977; SURF. SCI.; NETHERL.; DA. 1977-03; VOL. 63; PP. 11-20; BIBL. 23 REF.; SOLID-VAC. INTERFACE. INT. SYMP. SURF. PHYS. 4. PROC.; EINDHOVEN, NETH.; 1976)Conference Paper

A TIGHT-BINDING CALCULATION OF THE CHEMICAL SHIFT IN TRIGONAL SELENIUM AND TELLURIUM.BENSOUSSAN M; LANNOO M.1977; J. PHYS.; FR.; DA. 1977; VOL. 38; NO 8; PP. 921-929; ABS. FR.; BIBL. 16 REF.Article

COVALENCE DANS LES STRUCTURES ELEMENTAIRES ET LES COMPOSES AB. II. DEVELOPPEMENTS EN MOMENTSFRIEDEL J; LANNOO M.1973; J. PHYS.; G.B.; DA. 1973; VOL. 34; NO 5-6; PP. 483-493; ABS. ANGL.; BIBL. 25 REF.Serial Issue

The role of dangling bonds in the properties of surfaces and interfaces of semiconductorsLANNOO, M.Revue de physique appliquée. 1990, Vol 25, Num 9, pp 887-894, issn 0035-1687, 8 p.Article

Comparative properties of systems involving dangling bondsLANNOO, M.Radiation effects. 1989, Vol 111-112, Num 1-2, pp 211-219, issn 0033-7579Article

  • Page / 8