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LARGE-SIGNAL COMPUTER SIMULATION OF IMPATT DIODESSCANLAN SO; BRAZIL TJ.1981; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1981; VOL. 28; NO 1; PP. 12-21; BIBL. 34 REF.Article

EIGENMODE INTERACTIONS IN GYROTRON ELECTRON BEAMSDOEHLER O; DOEHLER G; SMITH ST et al.1979; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1979; VOL. 26; NO 10; PP. 1655-1661; BIBL. 10 REF.Article

LARGE-SIGNAL COMPUTER SIMULATIONS OF THE CONTACT, CIRCUIT, AND BIAS DEPENDENCE OF X-BAND TRANSFERRED ELECTRON OSCILLATORSGRUBIN HL.1978; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1978; VOL. 25; NO 5; PP. 511-519; BIBL. 19 REF.Article

VORSCHLAG EINES GROSSIGNAL-ERSATZSCHALTBILDES FUER DEN FELDEFFEKT-TRANSISTOR. = UN SCHEMA EQUIVALENT EN GRANDS SIGNAUX PROPOSE POUR LE TRANSISTOR A EFFET DE CHAMPHILBERG W.1977; NACHR.-TECH. Z.; DTSCH.; DA. 1977; VOL. 30; NO 10; PP. 780-783; ABS. ANGL.Article

IMPEDANZMESSUNG AN LAWINENDIODEN.WESTPHAL K.1976; NACHR.-TECH., ELEKTRON; DTSCH.; DA. 1976; VOL. 26; NO 10; PP. 390-395; ABS. RUSSE ANGL.; BIBL. 6 REF.Article

COMPUTER-AIDED LARGE-SIGNAL MEASUREMENT OF IMPATT-DIODE ELECTRONIC ADMITTANCESYRETT BA.1979; I.E.E.E. TRANS. MICROWAVE THEORY TECH.; USA; DA. 1979; VOL. 27; NO 10; PP. 830-834; BIBL. 11 REF.Article

LARGE SIGNAL PROPERTIES OF INJECTION LOCKED DIODE OSCILLATORSBERCELI T.1977; ACTA TECH. ACAD. SCI. HUNGAR.; HUN; DA. 1977; VOL. 85; NO 3-4; PP. 281-305; ABS. GER/RUS; BIBL. 19 REF.Article

COMPUTER SIMULATION OF IMPATT DEVICES.SCANLAN JO; BRAZIL TJ.1976; IN: PHYS. IN IND. INT. CONF. PROC.; DUBLIN; 1976; OXFORD; PERGAMON PRESS; DA. 1976; PP. 81-84; BIBL. 5 REF.Conference Paper

LARGE-SIGNAL TIME-DOMAIN MODELING OF AVALANCHE DIODESBLAKEY PA; GIBLIN RA; SEEDS AJ et al.1979; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1979; VOL. 26; NO 11; PP. 1718-1728; BIBL. 25 REF.Article

SIMPLE MODEL OF LARGE-SIGNAL PROPERTIES OF 1 W F.E.T. AT 5 GHZKOTZEBUE KL; EHLERS ER.1979; ELECTRON. LETTERS; GBR; DA. 1979; VOL. 15; NO 8; PP. 237-238; BIBL. 3 REF.Article

LARGE- AND SMALL-SIGNAL CHANNEL TRANSIT TIME DELAYS IN LONG-CHANNEL MOS TRANSISTORS.MIKAMI Y; THOMAS RE.1977; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1977; VOL. 24; NO 2; PP. 99-107; BIBL. 12 REF.Article

EFFECT OF SATURATION CURRENT ON NOISE IN IMPATT DIODES UNDER LARGE-SIGNAL CONDITIONS.PERICHON R; CONSTANT E.1976; J. APPL. PHYS.; U.S.A.; DA. 1976; VOL. 47; NO 11; PP. 5072-5076; BIBL. 13 REF.Article

PUISSANCE MAXIMUM ET RENDEMENT D'UNE DIODE IMPATT A INJECTIONPAVLOV GP.1979; IZVEST. VYSSH. UCHEBN. ZAVED., RADIOELEKTRON.; UKR; DA. 1979; VOL. 22; NO 10; PP. 84-88; BIBL. 7 REF.Article

"TWO-SIGNAL" METHOD OF MEASURING THE LARGE-SIGNAL S-PARAMETERS OF TRANSISTORSMAZUMDER SR; VAN DER PUIJE PD.1978; I.E.E.E. TRANS. MICROWAVE THEORY TECH.; USA; DA. 1978; VOL. 26; NO 6; PP. 417-420; BIBL. 11 REF.Article

LARGE-SIGNAL OF IMPATT DIODES.MATHUR PC; VIJENDER SHARMA.1976; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1976; VOL. 36; NO 1; PP. 269-274; ABS. ALLEM.; BIBL. 6 REF.Article

SELF-CONSISTENT LARGE SIGNAL THEORY OF THE GYROTRON TRAVELLING WAVE AMPLIFIERGANGULY AK; AHN S.1982; INTERNATIONAL JOURNAL OF ELECTRONICS THEORETICAL & EXPERIMENTAL; ISSN 0020-7217; GBR; DA. 1982; VOL. 53; NO 6; PP. 641-658; BIBL. 11 REF.Article

OSCILLATIONS DANS UN SYSTEME A 2 CIRCUITS AVEC NON LINEARITE DU TYPE RELAISVINYARSKIJ VF; MARCHENKO VF; PRONINA TI et al.1982; RADIOTEHNIKA I ELEKTRONIKA; ISSN 508322; SUN; DA. 1982; VOL. 27; NO 9; PP. 1798-1803; BIBL. 8 REF.Article

NUMERICAL SIMULATION AND MEASUREMENT OF GUNN DEVICE DYNAMIC MICROWAVE CHARACTERISTICSLAKSHMINARAYANA MR; PARTAIN LD.1980; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1980; VOL. 27; NO 3; PP. 546-552; BIBL. 25 REF.Article

FREQUENCY LIMITATION OF GAAS TRANSFERRED-ELECTRON DEVICES. INFLUENCE OF OPERATING D.C. AND R.F. FIELD VALUESROLLAND PA; CONSTANT E; SALMER G et al.1979; ELECTRON. LETTERS; GBR; DA. 1979; VOL. 15; NO 13; PP. 373-374; BIBL. 7 REF.Article

LARGE-SIGNAL PERFORMANCE OF AUDIO POWER AMPLIFIERS IN THE FREQUENCY DOMAINALLEN PE.1979; J. AUDIO ENGNG SOC.; USA; DA. 1979; VOL. 27; NO 9; PP. 638-647; ABS. FRE/GER/SPA; BIBL. 20 REF.Article

THE GYROCON: A HIGH-EFFICIENCY, HIGH-POWER MICROWAVE AMPLIFIERTALLERICO PJ; RANKIN JE.1979; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1979; VOL. 26; NO 10; PP. 1559-1566; BIBL. 18 REF.Article

A MODIFIED EBERS-MOLL TRANSISTOR MODEL FOR RF-INTERFERENCE ANALYSISLARSON CE; ROE JM.1979; I.E.E.E. TRANS. ELECTROMAGN. COMPATIB.; USA; DA. 1979; VOL. 21; NO 4; PP. 283-290; BIBL. 8 REF.Article

ANALYSIS OF THE OPTICALLY CONTROLLED IMPATT (OPCAD) OSCILLATORFORREST JR; SEEDS AJ.1979; I.E.E. J. SOLID-STATE ELECTRON DEVICES; GBR; DA. 1979; VOL. 3; NO 5; PP. 161-169; BIBL. 19 REF.Article

LARGE SIGNAL GAAS M.E.S.F.E.T. MODEL AND DISTORTION ANALYSIS.MINASIAN RA.1978; ELECTRON. LETTERS; G.B.; DA. 1978; VOL. 14; NO 6; PP. 183-185; BIBL. 7 REF.Article

LARGE-SIGNAL IMPEDANCE MEASUREMENTS AND POWER-EFFICIENCY CONSIDERATION OF N+PP+ GAAS IMPATT DIODES.VIJENDER SHARMA; MATHUR PC.1977; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1977; VOL. 44; NO 1; PP. 401-410; ABS. ALLEM.; BIBL. 10 REF.Article

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