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RESPONSE OF SEMICONDUCTOR LASER TO DEEP SINUSOIDAL INJECTION CURRENT MODULATIONTARUCHA S; OTSUKA K.1981; IEEE J. QUANTUM ELECTRON.; ISSN 0018-9197; USA; DA. 1981; VOL. 17; NO 5; PP. 810-816; BIBL. 14 REF.Article

A COMPARISON OF THE PROPERTIES OF INJECTION LASERS WITH DIFFERENT MOUNTINGS.ARNOLD G; BERLAC FJ; GLASMACHERS G et al.1974; IN: ELECTRO-OPT. INT. '74 CONF. PROC. TECH. PROGR.; BRIGHTON, ENGL.; 1974; SURBITON, SURREY; KIVER COMMUN.; DA. 1974; PP. 177-183; BIBL. 11 REF.Conference Paper

INFLUENCE DES CARACTERISTIQUES DES LASERS A INJECTION SUR LA RECONSTRUCTION DES HOLOGRAMMES DE PHASENIKITIN VV; SAMOJLOV VD; SEMENOV GI et al.1974; KVANT. ELEKTRON.; S.S.S.R.; DA. 1974; VOL. 1; NO 1; PP. 7-21; BIBL. 8 REF.Article

SUBHARMONIC RESONANCE IN THE DIRECT MODULATION OF INJECTION LASERS. = RESONANCE SUBHARMONIQUE DANS LA MODULATION DIRECTE DE LASERS A INJECTIONHARTH W; SIEMSEN D.1974; ARCH. ELEKTRON. UEBERTRAG.-TECH.; DTSCH.; DA. 1974; VOL. 28; NO 9; PP. 391-392; ABS. ALLEM.; BIBL. 3 REF.Article

EXPERIMENTAL AND THEORETICAL STUDY OF THE SPATIAL VARIATION OF JUNCTION VOLTAGE AND CURRENT DISTRIBUTION IN NARROW STRIPE INJECTION LASERS.SOMMERS HS JR; NORTH DO.1977; J. APPL. PHYS.; U.S.A.; DA. 1977; VOL. 48; NO 11; PP. 4460-4467; BIBL. 13 REF.Article

SINGLE-TRANSVERSE-MODE INJECTION LASERS WITH EMBEDDED STRIPE LAYER GROWN BY MOLECULAR BEAM EPITAXY.LEE TP; CHO AY.1976; APPL. PHYS. LETTERS; U.S.A.; DA. 1976; VOL. 29; NO 3; PP. 164-166; BIBL. 17 REF.Article

FLASHLIGHT-SIZE EXTERNAL CAVITY SEMICONDUCTOR LASER WITH NARROW-LINEWIDTH TUNABLE OUTPUT.HECKSCHER H; ROSSI JA.1975; APPL. OPT.; U.S.A.; DA. 1975; VOL. 14; NO 1; PP. 94-96; BIBL. 9 REF.Article

CHARGE STORAGE IN INJECTION LASERS AND ITS EFFECT ON HIGH-SPEED PULSE MODULATION OF LASER DIODE.LEE TP; DEROSIER RM.1974; PROC. I.E.E.E.; U.S.A.; DA. 1974; VOL. 62; NO 8; PP. 1176-1177; BIBL. 10 REF.Article

COMPARISON OF OPTICAL TO INJECTION EXCITATION IN GAAS HETEROSTRUCTURE LASERS.ROSSI JA; CHINN SR; HSIEH JJ et al.1974; J. APPL. PHYS.; U.S.A.; DA. 1974; VOL. 45; NO 12; PP. 5383-5388; BIBL. 7 REF.Article

DISTRIBUTED FEEDBACK GAAS HOMOJUNCTION INJECTION LASER.STOLL HM; SEIB DH.1974; APPL. OPT.; U.S.A.; DA. 1974; VOL. 13; NO 9; PP. 1980-1982; BIBL. 8 REF.Article

GAAS-GA1-XALXAS BURIED-HETEROSTRUCTURE INJECTION LASERS.TSUKADA T.1974; J. APPL. PHYS.; U.S.A.; DA. 1974; VOL. 45; NO 11; PP. 4899-4906; BIBL. 17 REF.Article

MONOLITHIC GAAS INJECTION MESA LASERS WITH GROWN OPTICAL FACETS.BLUM FA; LAWLEY KL; DOERBECK FH et al.1974; APPL. PHYS. LETTERS; U.S.A.; DA. 1974; VOL. 25; NO 10; PP. 620-621; BIBL. 2 REF.Article

SATURATION BEHAVIOR OF THE OPTICAL GAIN IN GAAS INJECTION LASERS.LANG R.1974; I.E.E.E.J. QUANTUM ELECTRON.; U.S.A.; DA. 1974; VOL. 10; NO 10; PP. 825-826; BIBL. 4 REF.Article

FM SIDEBAND INJECTION LOCKING OF DIODE LASERSGOLDBERG L; TAYLOR HF; WELLER JF et al.1982; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 23; PP. 1019-1020; BIBL. 6 REF.Article

SELF-MODULATION OF LIGHT OUTPUT FROM SEMICONDUCTOR INJECTION LASERS WITH COMPOUND CAVITIESOGASAWARA N; ITO R; SASAKI T et al.1982; JAPANESE JOURNAL OF APPLIED PHYSICS; ISSN 0021-4922; JPN; DA. 1982; VOL. 21; NO 10; PART. 1; PP. 1465-1471; BIBL. 16 REF.Article

LEAKY-MODE CHANNEL-GUIDE INJECTION LASERSACKLEY DE.1981; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1981; VOL. 17; NO 20; PP. 766-768; BIBL. 10 REF.Article

STRUCTURE HETEROGENE POUR LASERS A INJECTION A BASE DE PB1-XSNXSEZASAVITSKIJ II; ZLOMANOV VP; KASHKUR IP et al.1981; Z. TEH. FIZ.; ISSN 0044-4642; SUN; DA. 1981; VOL. 51; NO 5; PP. 943-948; BIBL. 12 REF.Article

EXTERNAL OPTICAL FEEDBACK EFFECTS ON SEMICONDUCTOR INJECTION LASER PROPERTIESLANG R; KOBAYASHI K.1980; I.E.E.E. J. QUANTUM ELECTRON.; USA; DA. 1980; VOL. 16; NO 3; PP. 347-355; BIBL. 19 REF.Article

DER HALBLEITERINJEKTIONSLASER UND SEINE ANWENDUNG. I: GRUNDLAGEN = LE LASER A INJECTION A SEMI-CONDUCTEUR ET SON UTILISATION. I. PRINCIPESFRAHM J; JUNGE K.1979; RADIO FERNSEHEN ELEKTRON.; DDR; DA. 1979; VOL. 28; NO 2; PP. 71-75Article

STAND DER FORSCHUNG BEI HALBLEITER-INJEKTIONSLASERN = ETAT DE LA RECHERCHE DANS LE CAS DES LASERS A INJECTION A SEMICONDUCTEURGROTHE H.1978; NACHR. ELEKTRON.; DEU; DA. 1978; VOL. 32; NO 10; PP. 329-332; ABS. ENG; BIBL. 46 REF.Article

A NEW DIELECTRIC FACET REFLECTOR FOR SEMICONDUCTOR LASERS.ETTENBERG M.1978; APPL. PHYS. LETTERS; U.S.A.; DA. 1978; VOL. 32; NO 11; PP. 724-725; BIBL. 9 REF.Article

MEASUREMENT OF THE THERMAL IMPEDANCE OF INJECTION LASERS.FREUDE W.1977; ARCH. ELEKTRON. UEBERTRAG.-TECH.; DTSCH.; DA. 1977; VOL. 31; NO 11; PP. 478-480; ABS. ALLEM.; BIBL. 4 REF.Article

AUTOMATIC BIAS CONTROL (ABC) FOR INJECTION LASERS.ALBANESE A.1977; IN: OPT. FIBER TRANSM. II. TOP. MEET.; WILLIAMSBURG, VA.; 1977; S.L.; OPT. SOC. AM.; DA. 1977; PP. (4P.); BIBL. 3 REF.Conference Paper

DEGRADATION IN INJECTION LASERS.WOOLHOUSE GR.1975; I.E.E.E. J. QUANTUM ELECTRON.; U.S.A.; DA. 1975; VOL. 11; NO 7 PART. 2; PP. 556-561; BIBL. 43 REF.Article

LASER A SEMICONDUCTEUR COMME SOURCE DE RAYONNEMENT POUR LES DISPOSITIFS ET EXPERIENCES HOLOGRAPHIQUESBYKOVSKIJ YU A; ELKHOV VA; LARKIN AI et al.1975; IN: VSES. SHK. GOLOGRAFII. 7. MATER.; LENINGRAD; 1975; LENINGRAD; INST. YAD. FIZ.; DA. 1975; PP. 260-270Conference Paper

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