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Results 1 to 25 of 19262

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FIELD EFFECT SEMICONDUCTOR LASERSAN JC; CHO Y; OHKE S et al.1980; IEEE J. QUANTUM ELECTRON.; ISSN 0018-9197; USA; DA. 1980; VOL. 16; NO 12; PP. 1300-1302; BIBL. 12 REF.Article

LASER A SEMI-CONDUCTEUR.DE CREMOUX B.1975; PARIS; TECH. ING.; DA. 1975; VOL. E1105; PP. 1-7; BIBL. 5 REF.; (ELECTRON. E68)Miscellaneous

DIRECT GAIN MODULATION OF A SEMICONDUCTOR LASER BY A GAAS PICOSECOND OPTOELECTRONIC SWITCHGOEBEL EO; VEITH G; KUHL J et al.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 1; PP. 25-27; BIBL. 22 REF.Article

THE IDENTIFICATION OF COPPER IN LONY LIVED GAALAS DOUBLE HETEROSTRUCTURE LASERS BY MEANS OF ELECTION PROBE X-RAY MICROANALYSISSKEATS AP; WAKEFIELD B; ROBERTSON MJ et al.1983; JOURNAL OF APPLIED PHYSICS; ISSN 0021-8979; USA; DA. 1983; VOL. 54; NO 3; PP. 1232-1235; BIBL. 6 REF.Article

AN OPTIMIZATION PROCEDURE FOR THE SELECTION OF DIODE LASER FACET COATINGSFYE DM.1981; IEEE J. QUANTUM ELECTRON.; ISSN 0018-9197; USA; DA. 1981; VOL. 17; NO 9; PP. 1950-1954; BIBL. 14 REF.Article

SCHMALE STREIFENLASER = LASER A BANDE ACTIVE ETROITEVOLLMER HP.1979; NACHR. ELEKTRON.; DEU; DA. 1979; VOL. 33; NO 2; PP. 47-49; BIBL. 7 REF.Article

EFFECT OF WAVE CONFINEMENT ON THE THRESHOLD CURRENT IN HETEROSTRUCTURE INJECTION LASERS.RAKSHIT S; BISWAS SN; CHAKRAVARTI AN et al.1974; INTERNATION. J. ELECTRON.; G.B.; DA. 1974; VOL. 36; NO 5; PP. 593-599; BIBL. 11 REF.Article

RATE EQUATION APPROACH FOR DIODE LASERS. I. STEADY STATE SOLUTIONS FOR A SINGLE DIODE.SALATHE R; VOUMARD C; WEBER H et al.1974; OPTO. ELECTRONICS; G.B.; DA. 1974; VOL. 6; NO 6; PP. 451-456; BIBL. 22 REF.Article

RATE EQUATION APPROACH FOR DIODE LASERS. II. STEADY STATE SOLUTIONS FOR COMPOUND SYSTEMS.SALATHE R; VOUMARD C; WEBER H et al.1974; OPTO-ELECTRONICS; G.B.; DA. 1974; VOL. 6; NO 6; PP. 457-463; BIBL. 14 REF.Article

A PROPOSED NEW METHOD FOR DAMPING RELAXATION OSCILLATIONS IN LASER DIODESKATZ J; MARGALIT S; YARIV A et al.1982; ELECTRON DEVICE LETTERS; ISSN 0193-8576; USA; DA. 1982; VOL. 3; NO 11; PP. 333-335; BIBL. 5 REF.Article

DARK LINE LOSS IN DEGRADED DOUBLE-HETEROSTRUCTURE LASERS.KOBAYASHI T; FURUKAWA Y.1975; JAP. J. APPL. PHYS.; JAP.; DA. 1975; VOL. 14; NO 8; PP. 1175-1181; BIBL. 9 REF.Article

A METHOD FOR THE CALCULATION OF THE RADIATION-PATTERN AND MODE-CONVERSION PROPERTIES OF A SOLID-STATE HETEROJUNCTION LASER.LEWIN L.1975; I.E.E.E. TRANS. MICROWAVE THEORY TECH.; U.S.A.; DA. 1975; VOL. 23; NO 7; PP. 576-585; BIBL. 8 REF.Article

A NEW SULFUR DIFFUSED STRIPE-GEOMETRY DH LASER.TAKUSAGAWA M; NISHI H; OSAKA S et al.1975; IN: INT. ELECTRON DEVICES MEET.; WASHINGTON, D.C.; 1975; NEW YORK; INST. ELECTR. ELECTRON. ENG.; DA. 1975; PP. 490-493; BIBL. 6 REF.Conference Paper

LASERS A SEMICONDUCTEUR ACCORDABLESTANAKA S.1974; OYO BUTURI; JAP.; DA. 1974; VOL. 43; NO 10; PP. 1035-1037; BIBL. 15 REF.Article

THEORIE CINETIQUE DE GENERATION D'UN CHAMP FORT DANS LES LASERS A SEMICONDUCTEURGALITSKIJ VM; ELESIN VF.1975; ZH. EKSPER. TEOR. FIZ.; S.S.S.R.; DA. 1975; VOL. 68; NO 1; PP. 216-222; ABS. ANGL.; BIBL. 5 REF.Article

A METHOD OF INVESTIGATION OF HETEROSTRUCTURES FOR JUNCTION LASERS BASED ON PHOTOLUMINESCENCE MEASUREMENTS.BRYSKIEWICZ T; HERMAN MA; LEWANDOWSKI W et al.1975; KRISTALL U. TECH.; DTSCH.; DA. 1975; VOL. 10; NO 1; PP. 85-90; ABS. ALLEM.; BIBL. 8 REF.Article

NEW THEORY OF INTERNAL Q SWITCHING IN SEMICONDUCTOR LASERS.GRUENDORFER S; ADAMS MJ.1974; ELECTRON. LETTERS; G.B.; DA. 1974; VOL. 10; NO 17; PP. 354-356; BIBL. 14 REF.Article

INSTABILITE DYNAMIQUE D'UN LASER A SEMICONDUCTEUR AUX BASSES TEMPERATURESLITVINOV VF; MOLOCHEV VI; MOROZOV VN et al.1974; ZH. EKSPER. TEOR. FIZ., PIS'MA REDAKC.; S.S.S.R.; DA. 1974; VOL. 19; NO 12; PP. 747-750; BIBL. 6 REF.Article

DARK DEFECTS IN INGAASP/INP DOUBLE HETEROSTRUCTURE LASERS UNDER ACCELERATED AGINGFUKUDA M; WAKITA K; IWANE G et al.1983; JOURNAL OF APPLIED PHYSICS; ISSN 0021-8979; USA; DA. 1983; VOL. 54; NO 3; PP. 1246-1250; BIBL. 17 REF.Article

INFLUENCE OF OPTICAL FEEDBACK ON LASER FREQUENCY SPECTRUM AND THRESHOLD CONDITIONSOSMUNDSEN JH; GADE N.1983; IEEE JOURNAL OF QUANTUM ELECTRONICS; ISSN 0018-9197; USA; DA. 1983; VOL. 19; NO 3; PP. 465-469; BIBL. 6 REF.Article

THEORIE DU LASER A VARIATION DE ZONEKAZARINOV RF; TSARENKOV GV.1976; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1976; VOL. 10; NO 2; PP. 297-303; BIBL. 10 REF.Article

THEORY OF OPTICAL GAIN AND THRESHOLD PROPERTIES OF SEMICONDUCTOR LASERS.ALEKSANIAN AG; POLUEKTOV IA; POPOV YU M et al.1974; I.E.E.E. J. QUANTUM ELECTRON.; U.S.A.; DA. 1974; VOL. 10; NO 3; PP. 297-305; BIBL. 14 REF.Article

VISIBLE CW SINGLE QUANTUM WELL (ALGA) AS DIODE LASERSLINDSTROM C; BURNHAM RD; SCIFRES DR et al.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 2; PP. 134-136; BIBL. 11 REF.Article

INFLUENCE OF ALXGA1-XAS LAYER THICKNESS ON THRESHOLD CURRENT DENSITY AND DIFFERENTIAL QUANTUM EFFICIENCY FOR GAAS-ALXGA1-XAS DH LASERS.CASEY HC JR; PANISH MB.1975; J. APPL. PHYS.; U.S.A.; DA. 1975; VOL. 46; NO 3; PP. 1393-1395; BIBL. 7 REF.Article

COMMENT ON "COULOMB INTERACTION IN SEMICONDUCTOR LASERS".TEITLER S; NGAI KL; MCCOMBE BD et al.1974; PHYS. REV., B; U.S.A.; DA. 1974; VOL. 10; NO 8; PP. 3715-3719; BIBL. 23 REF.Article

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