PROPER CHOICE OF THE MEASURING FREQUENCY FOR DETERMINING FR OF BIPOLAR TRANSISTORSREIN HM.1983; SOLID-STATE ELECTRONICS; ISSN 0038-1101; GBR; DA. 1983; VOL. 26; NO 1; PP. 75-82; BIBL. 5 REF.Article

CONVERTISSEUR D'INDUCTION MAGNETIQUE A BASE D'UN TRANSISTOR DRIFT LATERALPERSIYANOV TV; REKALOVA GI; SHTYUBNER G et al.1977; IZVEST. VYSSH. UCHEBN. ZAVED., PRIBOROSTR.; S.S.S.R.; DA. 1977; VOL. 20; NO 2; PP. 25-29; BIBL. 6 REF.Article

EIGENSCHAFTEN UND ANWENDUNGEN DES PNP-LATERALTRANSISTORS = PROPRIETES ET APPLICATIONS DES TRANSISTORS LATERAUX PNPBAUMANN P; MOLLER W; SEIDEL G et al.1978; NACHR.-TECH. ELEKTRON.; DDR; DA. 1978; VOL. 28; NO 9; PP. 362-365; ABS. RUS/ENG/FRE; BIBL. 4 REF.Article

MAGNETIC TRANSISTOR BEHAVIOUR EXPLAINED BY MODULATION OF EMITTER INJECTION, NOT CARRIER DEFLECTIONVINAL AW; MASNARI NA.1982; ELECTRON DEVICE LETTERS; ISSN 0193-8576; USA; DA. 1982; VOL. 3; NO 8; PP. 203-205; BIBL. 7 REF.Article

THE QUASILATERAL TRANSISTORGURAL AB.1982; BULLETIN DE L'ACADEMIE POLONAISE DES SCIENCES. SERIE DES SCIENCES TECHNIQUES; ISSN 0001-4125; POL; DA. 1982; VOL. 30; NO 1-2; PP. 57-60; ABS. RUS; BIBL. 5 REF.Article

A SIMPLE TECHNIQUE FOR IMPROVING LATERAL P-N-P- TRANSISTOR PERFORMANCESURINDER KRISHNA; RAMDE A.1982; IEEE JOURNAL OF SOLID-STATE CIRCUITS; ISSN 0018-9200; USA; DA. 1982; VOL. 17; NO 4; PP. 781-783; BIBL. 10 REF.Article

ON THE GEOMETRICAL FACTOR OF LATERAL P-N-P TRANSISTORSKWANG SEOK SEO; CHOONG KI KIM.1980; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1980; VOL. 27; NO 1; PP. 295-297; BIBL. 8 REF.Article

DER EINFLUSS DER GEOMETRISCHEN ABMESSUNGEN DES LATERAL-TRANSISTORS AUF SEINE GLEICHSTROMKENNLINIEN = L'INFLUENCE DES DIMENSIONS GEOMETRIQUES DU TRANSISTOR LATERAL SUR SA CARACTERISTIQUE EN COURANT CONTINUTAKOW TB.1978; WISSENSH. Z. TECH. HOCHSECH. ILMENAU; DDR; DA. 1978; VOL. 24; NO 3; PP. 153-159; BIBL. 5 REF.Article

INFLUENCE OF EMITTER EDGE DISLOCATIONS ON RELIABILITY OF PLANAR NPN TRANSISTORSSTOJADINOVIC ND.1982; MICROELECTRONICS AND RELIABILITY; ISSN 0026-2714; GBR; DA. 1982; VOL. 22; NO 6; PP. 1113-1120; BIBL. 14 REF.Article

NOISE PHENOMENA ASSOCIATED WITH DISLOCATIONS IN BIPOLAR TRANSISTORSMIHAI MIHAILA; AMBERIADIS K.1983; SOLID-STATE ELECTRONICS; ISSN 0038-1101; GBR; DA. 1983; VOL. 26; NO 2; PP. 109-113; BIBL. 14 REF.Article

MODELLBETRACHTUNGEN ZUM LATERALTRANSISTOR MIT SEGMENT-GEGENKOPPLUNGBAUMANN P; MOELLER W.1981; NACHRITENTECH., ELEKTRON.; ISSN 0323-4657; DDR; DA. 1981; VOL. 31; NO 2; PP. 52-55; ABS. RUS/ENG/FRE; BIBL. 3 REF.Article

LATERAL DMOS POWER TRANSISTOR DESIGNCOLAK S; SINGER B; STUPP E et al.1980; I.E.E.E. ELECTRON DEVICE LETT.; USA; DA. 1980; VOL. 1; NO 4; PP. 51-53; BIBL. 6 REF.Article

ENHANCEMENT OF LATERAL P-N-P CURRENT GAIN BY GETTERINGKESAVAN R; ANDHARE PN; BHOLA KL et al.1979; J. ELECTROCHEM. SOC.; USA; DA. 1979; VOL. 126; NO 4; PP. 642-644; BIBL. 8 REF.Article

LATERAL PHOTOTRANSISTOR WITH LOW INTENSITY LIGHT SENSITIVITY.HAYASHI Y; YOSHIHARA H.1978; ELECTRON. LETTERS; G.B.; DA. 1978; VOL. 14; NO 12; PP. 295-296Article

A QUASI-ONE-DIMENSIONAL ANALYSIS OF SMALL-SIGNAL CURRENT GAINS IN LATERAL TRANSISTORSWENKATA RAM G; TYAGI MS.1978; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1978; VOL. 25; NO 11; PP. 1283-1290; BIBL. 12 REF.Article

TEST DEVICE STRUCTURES FOR INTEGRATED CIRCUIT DESIGN, PROCESS TECHNOLOGY DEVELOPMENT AND EVALUATIONSRIVASTAVA A.1982; MICROELECTRON. RELIAB.; ISSN 0026-2714; GBR; DA. 1982; VOL. 22; NO 2; PP. 195-206; BIBL. 12 REF.Article

ION-IMPLANTED IN⁰,53)GA⁰,47)AS/IN⁰,48)AS LATERAL PNP TRANSISTORSTABATABAIE ALAVI K; CHOUDHURY ANMM; ALAVI K et al.1982; ELECTRON DEVICE LETTERS; ISSN 0193-8576; USA; DA. 1982; VOL. 3; NO 12; PP. 379-381; BIBL. 12 REF.Article

LATERAL PNP GAAS BIPOLAR TRANSISTOR PREPARED BY ION IMPLANTATIONKRAUTLE H; NAROZNY P; BENEKING H et al.1982; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 6; PP. 259-260; BIBL. 8 REF.Article

Lateral charge spreading-induced effects within a shallow junction bipolar technologyHEMMERT, R. S; PAN, L. S; ALTIERI, J et al.Journal of applied physics. 1984, Vol 55, Num 2, pp 463-470, issn 0021-8979Article

Degradation of sensitivity in silicon lateral transistor magnetic sensorsCHU, H. S; GUVENCH, M. G.SPIE proceedings series. 1997, pp 209-214, isbn 0-930815-50-5Conference Paper

Correlation impedance in transistors at high injectionVAN DER ZIEL, A.Solid-state electronics. 1983, Vol 26, Num 9, pp 873-874, issn 0038-1101Article

THE LATERAL P-N-P TRANSISTOR - A PRATICAL INVESTIGATION OF THE DC CHARACTERISTICSBERGER HH; DRECKMANN U.1979; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1979; VOL. 26; NO 7; PP. 1038-1046; BIBL. 28 REF.Article

INFLUENCE DE L'INTENSITE D'IRRADIATION SUR LES DOMMAGES D'IRRADIATION DES TRANSISTORS BIPOLAIRES AU SILICIUM DUS AUX PROTONS ET AUX ELECTRONSBANNIKOV YU A; GORIN BM; KOZHEVNIKOV VP et al.1981; FIZ. TEH. POLUPROVODN.; ISSN 0015-3222; SUN; DA. 1981; VOL. 15; NO 11; PP. 2224-2229; BIBL. 18 REF.Article

A SIMPLE ANALYTICAL MODEL FOR ESTIMATING DC A OF LATERAL P-N-P TRANSISTORS.RAM GV; TYAGI MS.1978; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1978; VOL. 25; NO 1; PP. 62-64; BIBL. 13 REF.Article

A novel low-cost horizontal current bipolar transistor (HCBT) with the reduced parasiticsSULIGOJ, Tomislav; BILJANOVIC, Petar; SIN, Johnny K. O et al.Bipolar/BiCMOS Circuits and Technology Meetings. 2004, pp 36-39, isbn 0-7803-8618-3, 1Vol, 4 p.Conference Paper