PROPOSED PROCESS MODIFICATIONS FOR DYNAMIC BIPOLAR MEMORY TO REDUCE EMITTER-BASE LEAKAGE CURRENTANTIPOV I.1980; IEEE J. SOLID-STATE CIRCUITS; ISSN 0018-9200; USA; DA. 1980; VOL. 15; NO 4; PP. 714-719; BIBL. 14 REF.Article

A MODEL OF DC LEAKAGE IN CERAMIC CAPACITORSLOH E.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 9; PP. 6229-6235; BIBL. 16 REF.Article

COURANTS DE FUITE, A TRAVERS UN OXYDE DEPOSE SUR LA SURFACE D'UNE PORTE EN SILICIUM POLYCRISTALLINKORNYUSHKIN NA; KOVCHAVTSEV AP; SAPOZHNIKOVA NV et al.1983; MIKROELEKTRONIKA; ISSN 0544-1269; SUN; DA. 1983; VOL. 12; NO 3; PP. 210-216; BIBL. 9 REF.Article

BETRACHTUNGEN ZU RC-ZEITGLIEDERN = REMARQUER SUR LES BASES DE TEMPS RCKAUTSCH R.1978; MESSEN U. PRUEFEN; DEU; DA. 1978; NO 12; PP. 835-837Article

QUASI-THREE-DIMENSIONAL ANALYSIS OF A COMBUSTION MHD GENERATORSATYAMURTHY P; VENKATRAMANI N; ROHATGI VK et al.1982; ENERGY CONVERSION AND MANAGEMENT; ISSN 0196-8904; GBR; DA. 1982; VOL. 22; NO 3; PP. 243-250; BIBL. 13 REF.Article

DES BATTERIES AU PLOMB EXEMPTES D'ENTRETIEN DE 1 A 1350 A.P.1980; COMPOSANTS MEC. ELECTR. ELECTRON.; FRA; DA. 1980; NO 114; PP. 51-55; (4 P.)Article

PRECISION CAPACITOR RATIO MEASUREMENT TECHNIQUE FOR INTEGRATED CIRCUIT CAPACITOR ARRAYSMCCREARY JL; SEALER DA.1979; I.E.E.E. TRANS. INSTRUMENT. MEASUR.; USA; DA. 1979; VOL. 28; NO 1; PP. 11-17; BIBL. 5 REF.Article

SOME LEAKAGE CURRENT OBSERVATIONS ON ANODIC NATIVE OXIDES ON GAASMATHUR PC; DAWAR AL; TANEJA OP et al.1979; INTERNATION. J. ELECTRON.; GBR; DA. 1979; VOL. 47; NO 6; PP. 599-602; BIBL. 8 REF.Article

DETERMINATION OF SURFACE- AND BULK-GENERATION CURRENTS IN LOW-LEAKAGE SILICON MOS STRUCTURESBROTHERTON SD; GILL A.1978; APPL. PHYS. LETTERS; USA; DA. 1978; VOL. 33; NO 10; PP. 890-892; BIBL. 12 REF.Article

A SOLUTION TO THE SPACECRAFT CHARGING PROBLEMFELLAS CN.1982; J. ELECTROST.; ISSN 0304-3886; NLD; DA. 1982; VOL. 11; NO 3; PP. 281-296; BIBL. 6 REF.Article

DEEP LEVEL TRANSIENT SPECTROSCOPY FOR DIODES WITH LARGE LEAKAGE CURRENTSDAY DS; HELIX MJ; HESS K et al.1979; REV. SCI. INSTRUM.; ISSN 0034-6748; USA; DA. 1979; VOL. 50; NO 12; PP. 1571-1573; BIBL. 3 REF.Article

FEHLERSTROM-SCHUTZSCHALTER FUER VIEBSEITIGE ANWENDUNG = DISJONCTEURS DE PROTECTION A COURANT DE FUITE POUR UTILISATIONS VARIEESSCHREYER L.1978; SIEMENS Z.; DEU; DA. 1978; VOL. 52; NO 4; PP. 199-200; ABS. ENG; BIBL. 1 REF.Article

SEQUENTIAL ANNEAL EFFECT ON BIPOLAR TRANSISTOR WITH PHOSPHORUS-IMPLANTED EMITTER.KOJI T.1976; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1976; VOL. 23; NO 9; PP. 1103-1104; BIBL. 2 REF.Article

MODIFICATION OF THE TRANSIENT CAPACITANCE ANALYSIS OF GAAS MIS STRUCTURES FOR MINORITY CARRIER LIFETIME DETERMINATIONBHATTACHARYYA AB; LAKSHMI E.1983; JOURNAL OF APPLIED PHYSICS; ISSN 0021-8979; USA; DA. 1983; VOL. 54; NO 4; PP. 2116-2118; BIBL. 13 REF.Article

INHOMOGENEITY IN SEMI-INSULATING GAAS REVEALED BY SCANNING LEAKAGE CURRENT MEASUREMENTSMATSUMOTO Y; WATANABE H.1982; JPN. J. APPL. PHYS.; ISSN 0021-4922; JPN; DA. 1982; VOL. 21; NO 8; PART. 2; PP. 515-517; BIBL. 11 REF.Article

ETUDE DES CANAUX DE FUITE DU COURANT DANS LES CIRCUITS INTEGRES A L'AIDE D'UN MICROSCOPE LASER A BALAYAGEARMENCHA NN; VASIL'EV IA; MOLODYAN IP et al.1978; MIKROELECTRONIKA; S.S.S.R.; DA. 1978; VOL. 7; NO 1; PP. 66-69; BIBL. 5 REF.Article

EXPERIMENTS ON SURFACE PERIPHERAL LEAKAGE CURRENT OF A SILICON N⁺P JUNCTION.WANG CT.1977; SOLID-STATE ELECTRON.; G.B.; DA. 1977; VOL. 20; NO 12; PP. 967-969; BIBL. 3 REF.Article

ION-IMPLANTATION INTO AS-DIFFUSED JUNCTIONS IN SI.BOGARDUS EH.1977; J. APPL. PHYS.; U.S.A.; DA. 1977; VOL. 48; NO 5; PP. 2093-2094; BIBL. 6 REF.Article

SCHALTEN FI-SCHUTZSCHALTER SCHNELL GENUG. AUSSCHALTZEITEN VON FI-SCHUTZSCHALTERN. = LES DISJONCTEURS DE PROTECTION A COURANT DE FUITE SONT-ILS ASSEZ RAPIDES. TEMPS DE DECLENCHEMENT DU DISJONCTEUR A COURANT DE FUITEWINKLER A.1977; ELEKTROTECH. Z., B; DTSCH.; DA. 1977; VOL. 29; NO 1; PP. 3-6; BIBL. 8 REF.Article

ARGON IMPLANTATION GETTERING OF BIPOLAR DEVICES.POPONIAK MR; NAGASAKI T; YEH TH et al.1977; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1977; VOL. 124; NO 11; PP. 1802-1805; BIBL. 21 REF.Article

ELECTRON BEAM INDUCED LEAKAGE CURRENTS IN SILICON NITRIDE THIN FILMSGUNKEL C; SCHALCH D; SCHARMANN A et al.1982; PHYS. STATUS SOLIDI (A), APPL. RES.; DDR; DA. 1982-01; VOL. 69; NO 1; PP. K131-K134; BIBL. 6 REF.Article

DEGRADATION MECHANISM FOR SILICON P⁺-N JUNCTIONS UNDER FORWARD BIASHAMAKER RW; PUTNEY ZC; AYERS RL et al.1981; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1981; VOL. 24; NO 11; PP. 1001-1008; BIBL. 14 REF.Article

MEASUREMENT ARRANGEMENT FOR DIRECT CAPACITANCE/SURFACE POTENTIAL RECORDING ON M.O.S. CAPACITORLIGTENBERG HCG; SNIJDER J.1979; ELECTRON. LETTERS; GBR; DA. 1979; VOL. 15; NO 17; PP. 523-524; BIBL. 5 REF.Article

AN EXPERIMENTAL STUDY OF VARIOUS CROSS SHEET RESISTOR TEST STRUCTURES.BUEHLER MG; THURBER WR.1978; J. ELECTROCHEM. SOC.; USA; DA. 1978; VOL. 125; NO 4; PP. 645-650; BIBL. 7 REF.Article

THE INFLUENCE OF THE ELECTRONIC CURRENT ON THE MEASUREMENT OF ION POLARIZATION IN THE EVAPORATED SILICON OXIDE.DE MEY G; DE WILDE W.1977; THIN SOLID FILMS; NETHERL.; DA. 1977; VOL. 42; NO 1; PP. 81-89; BIBL. 33 REF.Article