MICROSTRUCTURE AND MAGNETISM IN AMORPHOUS RARE-EARTH-TRANSITION-METAL THIN FILMS. I. MICROSTRUCTURE.LEAMY HJ; DIRKS AG.1978; J. APPL. PHYS.; USA; DA. 1978; VOL. 49; NO 6; PP. 3430-3438; BIBL. 41 REF.Article

COLUMNAR MICROSTRUCTURE IN VAPOR-DEPOSITED THIN FILMS.DIRKS AG; LEAMY HJ.1977; THIN SOLID FILMS; NETHERL.; DA. 1977; VOL. 47; NO 3; PP. 219-233; BIBL. 55 REF.Article

DIRECT OBSERVATION OF THE GATE OXIDE ELECTRIC FIELD DISTRIBUTION IN SILICON MOSFET'SFRYE RC; LEAMY HJ.1982; ELECTRON DEVICE LETT.; ISSN 0193-8576; USA; DA. 1982; VOL. 3; NO 1; PP. 1-3; BIBL. 12 REF.Article

NUCLEATION-CONTROLLED OVERGROWTH OF SILICON ON SILICALEAMY HJ; DOHERTY CJ.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 37; NO 11; PP. 1028-1030; BIBL. 5 REF.Article

MICROSTRUCTURE AND MAGNETISM IN AMORPHOUS RARE-EARTH-TRANSITION-METAL THIN FILMS. II: MAGNETIC ANISOTROPYLEAMY HJ; DIRKS AG.1979; J. APPL. PHYS.; USA; DA. 1979; VOL. 50; NO 4; PP. 2871-2882; BIBL. 85 REF.Article

CONVERSION OF SI TO EPITAXIAL SIC BY REACTION WITH C₂H₂.MOGAB CJ; LEAMY HJ.1974; J. APPL. PHYS.; U.S.A.; DA. 1974; VOL. 45; NO 3; PP. 1075-1084; BIBL. 24 REF.Article

THE ELECTRICAL PROPERTIES OF STACKING FAULTS AND PRECIPITATES IN HEAT-TREATED DISLOCATION-FREE CZOCHRALSKI SILICON.KIMERLING LC; LEAMY HJ; PATEL JR et al.1977; APPL. PHYS. LETTERS; U.S.A.; DA. 1977; VOL. 30; NO 5; PP. 217-219; BIBL. 13 REF.Article

BENDING DEFORMATION IN METALLIC GLASSESCHEN HS; LEAMY HJ; O'BRIEN MJ et al.1973; SCRIPTA METALLURG.; E.U.; DA. 1973; VOL. 7; NO 4; PP. 415-419; BIBL. 10 REF.Serial Issue

INJECTION-STIMULATED DISLOCATION MOTION IN SEMICONDUCTORS.KIMERLING LC; PETROFF P; LEAMY HJ et al.1976; APPL. PHYS. LETTERS; U.S.A.; DA. 1976; VOL. 28; NO 6; PP. 297-300; BIBL. 11 REF.Article

COMMENTS ON "ON THE INFLUENCE OF STRAIN ENERGY UPON THE ARRANGEMENT OF PARALLEL PLATE-SHAPED COHERENT PRECIPITATES"WARLIMONT H; SCHWELLINGER P; LEAMY HJ et al.1972; SCRIPTA METALLURG.; E.U.; DA. 1972; VOL. 6; NO 11; PP. 1029-1031; BIBL. 17 REF.Serial Issue

ANNULAR GRAIN STRUCTURES IN PULSED LASER RECRYSTALLIZED SI ON AMORPHOUS INSULATORSCELLER GK; LEAMY HJ; TRIMBLE LE et al.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 39; NO 5; PP. 425-427; BIBL. 4 REF.Article

CHARGE COLLECTION MICROSCOPY ON P-WSE₂: RECOMBINATION SITES AND MINORITY CARRIER DIFFUSION LENGTHLEWERENZ HJ; FERRIS SD; DOHERTY CJ et al.1982; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1982; VOL. 129; NO 2; PP. 418-423; BIBL. 34 REF.Article

FIELD HEAT TREATMENT OF FERROMAGNETIC METALLIC GLASSES.CHEN HS; FERRIS SD; GYORGY EM et al.1975; APPL. PHYS. LETTERS; U.S.A.; DA. 1975; VOL. 26; NO 7; PP. 405-406; BIBL. 10 REF.Article

SEEDED OSCILLATORY GROWTH OF SI OVER SIO₂ BY CW LASER IRRADIATIONCELLER GK; TRIMBLE LE; NG KK et al.1982; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1982; VOL. 40; NO 12; PP. 1043-1045; BIBL. 11 REF.Article

SEM OBSERVATION OF DOPANT STRIAE IN SILICON.DE KOCK AJR; FERRIS SD; KIMERLING LC et al.1977; J. APPL. PHYS.; U.S.A.; DA. 1977; VOL. 48; NO 1; PP. 301-307; BIBL. 32 REF.Article

LASER FORMATION OF PT-SI SCHOTTKY BARRIERS ON SILICONDOHERTY CJ; CRIDER CA; LEAMY HJ et al.1980; J. ELECTRON. MATER.; ISSN 0361-5235; USA; DA. 1980; VOL. 9; NO 2; PP. 453-458; BIBL. 8 REF.Article

INVESTIGATION OF DEFECTS AND STRIATIONS IN AS-GROWN SI CRYSTALS BY SEM USING SCHOTTKY DIODES.DE ROCK AJR; FERRIS SD; KIMERLING LC et al.1975; APPL. PHYS. LETTERS; U.S.A.; DA. 1975; VOL. 27; NO 6; PP. 313-315; BIBL. 12 REF.Article

LATTICE-GAS INTERFACE STRUCTURE: A MONTE CARLO SIMULATIONLEAMY HJ; GILMER GH; JACKSON KA et al.1973; PHYS. REV. LETTERS; U.S.A.; DA. 1973; VOL. 30; NO 13; PP. 601-603; BIBL. 14 REF.Serial Issue

CHARACTERIZATION OF PULSED ND: YAG LASER-ANNEALED, ARSENIC-ION-IMPLANTED SILICONWILLIAMS JS; BROWN WL; CELLER GK et al.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 2; PP. 1038-1049; BIBL. 48 REF.Article

EXPLOSIVE CRYSTALLIZATION OF AMORPHOUS GERMANIUMLEAMY HJ; BROWN WL; CELLER GK et al.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 38; NO 3; PP. 137-139; BIBL. 28 REF.Article

REDUCTION OF GAAS SURFACE RECOMBINATION VELOCITY BY CHEMICAL TREATMENTNELSON RJ; WILLIAMS JS; LEAMY HJ et al.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 36; NO 1; PP. 76-79; BIBL. 15 REF.Article

ANISOTROPY OF THERMIONIC ELECTRON EMISSION VALUES FOR LAB₆ SINGLE-CRYSTAL EMITTER CATHODES.SCHMIDT PH; JOY DC; LONGINOTTI LD et al.1976; APPL. PHYS. LETTERS; U.S.A.; DA. 1976; VOL. 29; NO 7; PP. 400-401; BIBL. 7 REF.Article

DIRECT OBSERVATION OF GRAIN BOUNDARY EFFECTS IN POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORSLEAMY HJ; FRYE RC; NG KK et al.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 40; NO 7; PP. 598-600; BIBL. 19 REF.Article

EFFECTS OF GRAIN BOUNDARIES ON LASER CRYSTALLIZED POLY-SI MOSFET'SNG KK; CELLER GK; POVILONIS EI et al.1981; ELECTRON DEVICE LETT.; ISSN 0193-8576; USA; DA. 1981; VOL. 2; NO 12; PP. 316-318; BIBL. 13 REF.Article

DESIGN AND OPTIMIZATION OF DIRECTLY HEATED LAB₆ CATHODE ASSEMBLIES FOR ELECTRON-BEAM INSTRUMENTSSCHMIDI PH; LONGINOTTI LD; JOY DC et al.1978; J. VACUUM SCI. TECHNOL.; USA; DA. 1978; VOL. 15; NO 4; PP. 1554-1560; BIBL. 16 REF.Article