Homoepitaxially grown GaN-based light-emitting diodes with peak emission at 405 nmCAO, X. A; YAN, C. H; D'EVELYN, M. P et al.Journal of crystal growth. 2004, Vol 269, Num 2-4, pp 242-248, issn 0022-0248, 7 p.Article

Temperature-dependent electroluminescence in InGaN/GaN multiple-quantum-well light-emitting diodesCAO, X. A; LEBOEUF, S. F; ROWLAND, L. B et al.Journal of electronic materials. 2003, Vol 32, Num 5, pp 316-321, issn 0361-5235, 6 p.Article

Temperature-dependent electroluminescence of AlGaN-based UV LEDsCAO, X. A; LEBOEUF, S. F; STECHER, T. E et al.IEEE electron device letters. 2006, Vol 27, Num 5, pp 329-331, issn 0741-3106, 3 p.Article

Influence of GaN material characteristics on device performance for blue and ultraviolet light-emitting diodesMERFELD, D. W; CAO, X. A; LEBOEUF, S. F et al.Journal of electronic materials. 2004, Vol 33, Num 11, pp 1401-1405, issn 0361-5235, 5 p.Article

Ultraviolet-visible metal-semiconductor-metal photodetectors fabricated from In_xGa_1-xN (0 ≤ x ≤ 0.13)ROBERTS, J. C; PARKER, C. A; MUTH, J. F et al.Journal of electronic materials. 2002, Vol 31, Num 1, pp L1-L6, issn 0361-5235Article

Growth and characterization of blue and near-ultraviolet light-emitting diodes on bulk GaNCAO, X. A; LEBOEUF, S. F; ARTHUR, S. D et al.SPIE proceedings series. 2004, pp 48-53, isbn 0-8194-5468-0, 6 p.Conference Paper

Dramatically improved current spreading in UV leds via SI delta-doping in the N-algan cladding layerLEBOEUF, S. F; CAO, X. A; ROWLAND, L. B et al.Proceedings - Electrochemical Society. 2003, pp 158-165, issn 0161-6374, isbn 1-56677-349-0, 8 p.Conference Paper

Carrier capture and recombination at localized states in InGaN/GaN light-emitting diodesCAO, X. A; LEBOEUF, S. F; ROWLAND, L. B et al.Proceedings - Electrochemical Society. 2003, pp 166-173, issn 0161-6374, isbn 1-56677-349-0, 8 p.Conference Paper

Influence of defects on electrical and optical characteristics of GaN/InGaN-based light-emitting diodesCAO, X. A; TOPOL, K; KALOYEROS, A. E et al.SPIE proceedings series. 2002, pp 105-113, isbn 0-8194-4543-6, 9 p.Conference Paper