Thermal reliability and performances of InGaP Schottky contact with Cu/Au and Au/Cu-MSM photodetectorsTSAI, Chang-Da; LEE, Ching-Ting.Journal of electronic materials. 2001, Vol 30, Num 2, pp 59-64, issn 0361-5235Article

Conversion efficiency improvement mechanisms of polymer solar cells by balance electron-hole mobility using blended P3HT:PCBM:pentacene active layerLEE, Ching-Ting; LEE, Cheng-Hsin.Organic electronics (Print). 2013, Vol 14, Num 8, pp 2046-2050, issn 1566-1199, 5 p.Article

Improved performance mechanism of III―V compound triple-junction solar cell using hybrid electrode structureTSENG, Chun-Yen; LEE, Ching-Ting.Solar energy. 2013, Vol 89, pp 17-22, issn 0038-092X, 6 p.Article

Enhancing the Performance of ZnO Nanorod/p-GaN Heterostructured Photodetectors Using the Photoelectrochemical Oxidation Passivation MethodCHEN, Chia-Hsun; LEE, Ching-Ting.IEEE transactions on nanotechnology. 2013, Vol 12, Num 4, pp 578-582, issn 1536-125X, 5 p.Article

Performance improvement mechanisms of organic thin-film transistors using MoO_x-doped pentacene as channel layerLEE, Ching-Ting; CHEN, Hung-Chun.Organic electronics (Print). 2011, Vol 12, Num 11, pp 1852-1857, issn 1566-1199, 6 p.Article

A hybrid DWDM System for CATV and multimedia trunkingLU, Hai-Han; LEE, Ching-Ting; LIN, Chinlon et al.Journal of optical communications. 2001, Vol 22, Num 3, pp 114-118, issn 0173-4911Article

Performance improvement mechanisms of pentacene-based organic thin-film transistors using TPD buffer layerLEE, Ching-Ting; LIN, Yi-Min.Organic electronics (Print). 2013, Vol 14, Num 8, pp 1952-1957, issn 1566-1199, 6 p.Article

Organosilicon function of gas barrier films purely deposited by inductively coupled plasma chemical vapor deposition systemLIN, Tung-Ying; LEE, Ching-Ting.Journal of alloys and compounds. 2012, Vol 542, pp 11-16, issn 0925-8388, 6 p.Article

ZnO-based resonant cavity enhanced metal-semiconductor-metal ultraviolet photodetectorsLEE, Hsin-Ying; HSU, Yu-Ting; LEE, Ching-Ting et al.Solid-state electronics. 2013, Vol 79, pp 223-226, issn 0038-1101, 4 p.Article

Performance enhancement of III-V compound multijunction solar cell incorporating transparent electrode and surface treatmentTSENG, Chun-Yen; LEE, Choon-Kok; LEE, Ching-Ting et al.Progress in photovoltaics (Print). 2011, Vol 19, Num 4, pp 436-441, issn 1062-7995, 6 p.Article

AIGaN/GaN MOS-HEMTs With Gate ZnO Dielectric LayerLEE, Ching-Ting; CHIOU, Ya-Lan; LEE, Chi-Sen et al.IEEE electron device letters. 2010, Vol 31, Num 11, pp 1220-1223, issn 0741-3106, 4 p.Article

Changes in activation energies of donors and carrier concentration in Si-doped n-type GaN due to (NH₄)₂S_x treatmentLIN, Yow-Jon; LEE, Ching-Ting; CHANG, Hsing-Cheng et al.Semiconductor science and technology. 2006, Vol 21, Num 8, pp 1167-1171, issn 0268-1242, 5 p.Article

Diffusion barrier of sputtered W film for Cu Schottky contacts on InGaP layerLEE, Ching-Ting; LIU, Day-Shan; DENG, Ren-Wei et al.Thin solid films. 2004, Vol 468, Num 1-2, pp 216-221, issn 0040-6090, 6 p.Article

Mechanism investigation of NiO_x in Au/Ni/p-type GaN ohmic contacts annealed in airLEE, Ching-Ting; LIN, Yow-Jon; LEE, Tsung-Hsin et al.Journal of electronic materials. 2003, Vol 32, Num 5, pp 341-345, issn 0361-5235, 5 p.Article

The investigation for various treatments of InAlGaP Schottky diodesLEE, Hsin-Ying; LEE, Ching-Ting.Optical materials (Amsterdam). 2003, Vol 23, Num 1-2, pp 99-102, issn 0925-3467, 4 p.Conference Paper

Long-distance transmission of directly modulated 1550 nm AM-VSB CATV systemsLU, Hai-Han; LEE, Ching-Ting; KUO, Che-Ting et al.Fiber and integrated optics. 2001, Vol 20, Num 3, pp 279-285, issn 0146-8030Article

GaN-based p-type metal-oxide-semiconductor devices with a gate oxide layer grown by a bias-assisted photoelectrochemical oxidation methodCHIOU, Ya-Lan; HUANG, Li-Hsien; LEE, Ching-Ting et al.Semiconductor science and technology. 2010, Vol 25, Num 4, issn 0268-1242, 045020.1-045020.5Article

Influence of Deposition Conditions on Silicon Nanoclusters in Silicon Nitride Films Grown by Laser-Assisted CVD MethodTSAI, Tai-Cheng; LOU, Li-Ren; LEE, Ching-Ting et al.IEEE transactions on nanotechnology. 2011, Vol 10, Num 2, pp 197-202, issn 1536-125X, 6 p.Article

Photoelectrochemical Function in Gate-Recessed AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility TransistorsCHIOU, Ya-Lan; HUANG, Li-Hsien; LEE, Ching-Ting et al.IEEE electron device letters. 2010, Vol 31, Num 3, pp 183-185, issn 0741-3106, 3 p.Article

Bidirectional transport of AM-VSB CATV systemLU, Hai-Han; MA, Hsien-Li; LEE, Ching-Ting et al.Journal of optical communications. 2002, Vol 23, Num 1, pp 22-25, issn 0173-4911Article

Effect of Pt barrier on thermal stability of Ti/Al/Pt/Au in ohmic contact with Si-implanted n-type GaN layersLEE, Ching-Ting; KAO, Hsiao-Wei; HWANG, Fu-Tasi et al.Journal of electronic materials. 2001, Vol 30, Num 7, pp 861-865, issn 0361-5235Article

Low resistive ohmic contact formation on surface treated-n-GaN alloyed at low temperatureLIN, Yow-Jon; LEE, Hsin-Ying; HWANG, Fu-Tsai et al.Journal of electronic materials. 2001, Vol 30, Num 5, pp 532-537, issn 0361-5235Article

Investigation of Laser-Assisted Microcrystalline SiGe Films Deposited at Low TemperatureLAI, Li-Wen; LEE, Hsin-Ying; CHENG, Jun-Hung et al.Journal of electronic materials. 2008, Vol 37, Num 2, pp 167-171, issn 0361-5235, 5 p.Article

Changes in optical and electrical properties and surface recombination velocity of n-type GaN due to (NH₄)₂S_x treatmentLIN, Yow-Jon; LIN, Wen-Xiang; LEE, Ching-Ting et al.Solid state communications. 2006, Vol 137, Num 5, pp 257-259, issn 0038-1098, 3 p.Article

Surface treatment and passivation of III-nitride LEDsLEE, Ching-Ting; LIN, Yow-Jon.SPIE proceedings series. 2002, pp 85-93, isbn 0-8194-4380-8Conference Paper