A DRAWING BY ODILON REDONLEE T. P.MUSEUM OF FINE ARTS BULLETIN. 1973, Vol 4, Num 4, pp 68-69Article

RECENT ACQUISITIONS. A DRAWING BY BARTOLOMEO PASSAROTTILEE T. P.MUSEUM OF FINE ARTS BULLETIN. 1972, Vol 3, Num 1, pp 6-7Article

A DRAWING BY ODILON REDONLEE T. P.MUSEUM OF FINE ARTS BULLETIN. 1974, Vol 4, Num 4, pp 68-69Article

A BARBIZON MASTERPIECELEE T. P.MUSEUM OF FINE ARTS BULLETIN. 1973, Vol 4, Num 4, pp 62-67Article

Four channel integrated DFB laser array with tunable wavelength spacing and 40-Gb/s signal transmission capacityLO, Y. H; WANG, L. A; GOZDZ, A. S et al.Journal of lightwave technology. 1993, Vol 11, Num 4, pp 619-623, issn 0733-8724Article

Performance of random-wavelength switching of three-electrode DBR laser with packet headers used for routingWILLNER, A. E; CHAPURAN, T. E; WULLERT, J. R et al.Electronics Letters. 1992, Vol 28, Num 16, pp 1526-1528, issn 0013-5194Article

Bonding by atomic rearrangement of InP/InGaAsP 1.5 μm wavelength lasers on GaAs substratesLO, Y. H; BHAT, R; HWANG, D. M et al.Applied physics letters. 1991, Vol 58, Num 18, pp 1961-1963, issn 0003-6951, 3 p.Article

Low-threshold and high-speed 1•5μm compressive-strained multiquantum well four-wavelength distributed-feedback laser arraysZAH, C. E; CHEUNG, K. W; LEE, T. P et al.Electronics Letters. 1991, Vol 27, Num 12, pp 1040-1042, issn 0013-5194, 3 p.Article

Modal coupling in tilted-mirror waveguide lasers and amplifiersSALZMAN, J; HAWKINS, R. J; LEE, T. P et al.Optics letters. 1988, Vol 13, Num 6, pp 455-457, issn 0146-9592Article

High performance GaAs MESFETs grown on InP substrates by MOCVDLO, Y. H; BHAT, R; LEE, T. P et al.Electronics Letters. 1988, Vol 24, Num 14, pp 865-866, issn 0013-5194, 2 p.Article

Fabrication and performance of 1•5υm GalnAsP travelling-wave laser amplifiers with angled facetsZAH, C. E; OSINSKI, J. S; CANEAU, C et al.Electronics Letters. 1987, Vol 23, Num 19, pp 990-992, issn 0013-5194Article

InAs_xP_1-x/InP photodiodes prepared by molecular-beam epitaxyLEE, T. P; BURRUS, C. A; SESSA, W. B et al.Electronics Letters. 1984, Vol 20, Num 9, pp 363-364, issn 0013-5194Article

Amplitude fluctuations and photon statistics of InGaAsP injection lasersLIU, P.-L; FENCIL, L. E; KO, J.-S et al.IEEE journal of quantum electronics. 1983, Vol 19, Num 9, pp 1348-1351, issn 0018-9197Article

Recently acquired french paintings: reflections on the pastLEE, T. P.Apollo London. 1980, Vol 111, Num 217, pp 212-223Article

Cavity length dependence of K-limited bandwidth in 1.6 μm compressive-strained quantum well lasersWU, T. C; KAN, S. C; VASSILOVSKI, D et al.Electronics Letters. 1993, Vol 29, Num 5, pp 449-450, issn 0013-5194Article

1.5μm compressive-strained multiquantum-well 20-wavelength distributed-feedback laser arraysZAH, C. E; LIN, P. S. D; WU, T. C et al.Electronics Letters. 1992, Vol 28, Num 9, pp 824-826, issn 0013-5194Article

1.5μm compressive-strained multiquantum-well waveguide detectors for coherent polarisation-diversified receiversZAH, C. E; CHEUNG, K. W; BHAT, R et al.Electronics Letters. 1991, Vol 27, Num 10, pp 838-839, issn 0013-5194Article

High performance submicron pseudo-modfets and 2 :1 multiplexers using GaAs on InP heteroepitaxial technologyLO, Y. H; BAGHERI, M; LIN, P. S. D et al.Electronics Letters. 1990, Vol 26, Num 12, pp 807-809, issn 0013-5194, 3 p.Article

Phase modulation characteristics of 1.5μm strained-layer multiple quantum well laser amplifiersREICHENBACH, D; ZAH, C. E; ANDREADAKIS, N et al.Electronics Letters. 1990, Vol 26, Num 22, pp 1858-1860, issn 0013-5194Article

Multigigabit/s 1.5 μm λ/4-shifted DFB OEIC transmitter and its use in transmission experimentsLO, Y. H; GRABBE, P; IQBAL, M. Z et al.IEEE photonics technology letters. 1990, Vol 2, Num 9, pp 673-674Article

Point representation and hashing of an intervalBARKLEY, R. E; LEE, T. P.Information processing letters. 1989, Vol 30, Num 4, pp 201-203, issn 0020-0190Article

High-speed GaAs-on-InP long wavelength transmitter ŒICsLO, Y. H; CANEAU, C; BHAT, R et al.Electronics Letters. 1989, Vol 25, Num 10, pp 666-668, issn 0013-5194, 3 p.Article

Narrow-linewidth 1•3 μ DFB-DCPBH lasers with λ/4-shifted first-order gratings fabricated by electron beam lithography using a new fast resistZAH, C. E; CANEAU, C; MENOCAL, S. G et al.Electronics Letters. 1988, Vol 24, Num 2, pp 94-96, issn 0013-5194Article

1.3 μm GaInAsP near-travelling-wave laser amplifiers made by combination of angled facets and antireflection coatingsZAH, C. E; CANEAU, C; SHOKOOHI, F. K et al.Electronics Letters. 1988, Vol 24, Num 20, pp 1275-1276, issn 0013-5194Article

Measured spectral linewidth of single-frequency 1.3 and 1.5 μm injection lasersLEE, T. P; BURRUS, C. A; LIOU, K. Y et al.Electronics Letters. 1984, Vol 20, Num 24, pp 1011-1012, issn 0013-5194Article