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LEDS AND PHOTODETECTORS FOR WAVELENGTH-DIVISION-MULTIPLEXED LIGH-WAVE SYSTEMSLEE TP.1982; OPT. LASER TECHNOL.; ISSN 0030-3992; GBR; DA. 1982; VOL. 14; NO 1; PP. 15-20; BIBL. 22 REF.Article

THE NONLINEARITY OF DOUBLE-HETEROSTRUCTURE LED'S FOR OPTICAL COMMUNICATIONS.LEE TP.1977; PROC. I.E.E.E.; U.S.A.; DA. 1977; VOL. 65; NO 9; PP. 1408-1410; BIBL. 8 REF.Article

EFFECT OF JUNCTION CAPACITANCE ON THE RISE TIME OF LED'S AND ON THE TURN-ON DELAY OF INJECTION LASERS.LEE TP.1975; BELL SYST. TECH. J.; U.S.A.; DA. 1975; VOL. 54; NO 1; PP. 53-68; BIBL. 1 P.Article

VIRUS EXPOSURE DIMINISHES B-ADRENERGIC RESPONSE IN HUMAN LEUKOCYTESLEE TP.1980; RES. COMMUN. CHEM. PATHOL. PHARMACOL.; ISSN 0034-5164; USA; DA. 1980; VOL. 30; NO 3; PP. 469-476; BIBL. 19 REF.Article

POWER AND MODULATION BANDWIDTH OF GAAS-ALGAAS HIGH-RADIANCE LED'S FOR OPTICAL COMMUNICATION SYSTEMSLEE TP; DENTAI AG.1978; I.E.E.E. J. QUANTUM ELECTRON; USA; DA. 1978; VOL. 14; NO 3; PP. 150-159; BIBL. 33 REF.Article

EFFECTS OF STEROIDS ON THE REGULATION OF THE LEVELS OF CYCLIC AMP IN HUMAN LYMPHOCYTES.LEE TP; REED CE.1977; BIOCHEM. BIOPHYS. RES. COMMUNIC.; U.S.A.; DA. 1977; VOL. 78; NO 3; PP. 998-1004; BIBL. 13 REF.Article

A DIRECT RADIOIMMUNOASSAY FOR ALDOSTERONE IN UNEXTRACTED SERUM AND PLASMALEE TP; TAN CH.1981; CLIN. CHEM.; ISSN 0009-9147; USA; DA. 1981; VOL. 27; NO 12; PP. 2019-2021; BIBL. 7 REF.Article

SINGLE-TRANSVERSE-MODE INJECTION LASERS WITH EMBEDDED STRIPE LAYER GROWN BY MOLECULAR BEAM EPITAXY.LEE TP; CHO AY.1976; APPL. PHYS. LETTERS; U.S.A.; DA. 1976; VOL. 29; NO 3; PP. 164-166; BIBL. 17 REF.Article

CHARGE STORAGE IN INJECTION LASERS AND ITS EFFECT ON HIGH-SPEED PULSE MODULATION OF LASER DIODE.LEE TP; DEROSIER RM.1974; PROC. I.E.E.E.; U.S.A.; DA. 1974; VOL. 62; NO 8; PP. 1176-1177; BIBL. 10 REF.Article

CHARACTERISTICS OF RF INJECTION LOCKING OF SELF-PULSING IN AN AS GA AS DH JUNCTION LASER.LEE TP; SERRA TJB.1976; I.E.E.E. J. QUANTUM ELECTRON; U.S.A.; DA. 1976; VOL. 12; NO 6; PP. 368-371; BIBL. 11 REF.Article

DARKCURRENT AND BREAKDOWN CHARACTERISTICS OF DISLOCATION-FREE INP PHOTODIODESLEE TP; BURRUS CA.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 36; NO 7; PP. 587-589; BIBL. 4 REF.Article

PICOSECOND FREQUENCY CHIRPING AND DYNAMIC LINE BROADENING IN INGAASP INJECTION LASERS UNDER FAST EXCITATIONCHINLON LIN; LEE TP; BURRUS CA et al.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 2; PP. 141-143; BIBL. 19 REF.Article

LARGE-AREA BACK-ILLUMINATED INGAAS/INP PHOTODIODES FOR USE AT 1 TO 1.6 MU M WAVELENGTHBURRUS CA; DENTAI AG; LEE TP et al.1981; OPT. COMMUN.; ISSN 0030-4018; NLD; DA. 1981; VOL. 38; NO 2; PP. 124-126; BIBL. 4 REF.Article

P-N-P-N OPTICAL DETECTORS AND LIGHT-EMITTING DIODESCOPELAND JA; DENTAI AG; LEE TP et al.1978; I.E.E.E. J. QUANTUM ELECTRON.; USA; DA. 1978; VOL. 14; NO 11; PP. 810-813; BIBL. 7 REF.Article

GAAS TWIN-LASER SETUP TO MEASURE MODE AND MATERIAL DISPERSION IN OPTICAL FIBERS.GLOGE D; CHINNOCK EL; LEE TP et al.1974; APPL. OPT.; U.S.A.; DA. 1974; VOL. 13; NO 2; PP. 261-263; BIBL. 10 REF.Article

INGAAS/INP P-I-N PHOTODIODES FOR LIGHTWAVE COMMUNICATIONS AT THE 0.95-1.65 MU M WAVELENGTHLEE TP; BURRUS CA JR; DENTAI AG et al.1981; IEEE J. QUANTUM ELECTRON.; ISSN 0018-9197; USA; DA. 1981; VOL. 17; NO 2; PP. 232-238; BIBL. 26 REF.Article

TRANSMISSION PROPERTIES OF RIB WAVEGUIDES FORMED BY ANODIZATION OF EPITAXIAL GAAS ON ALXGA1-XAS LAYERS.REINHART FK; LOGAN RA; LEE TP et al.1974; APPL. PHYS. LETTERS; U.S.A.; DA. 1974; VOL. 24; NO 6; PP. 270-272; BIBL. 4 REF.Article

SHORT-ACTIVITY SINGLE-MODE 1.3 MU M INGAASP LASERS WITH EVAPORATED HIGH-REFLECTIVITY MIRRORSBURRUS CA; LEE TP; DENTAI AG et al.1981; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1981; VOL. 17; NO 25-26; PP. 954-956; BIBL. 7 REF.Article

LOW THRESHOLD CURRENT TRANSVERSE JUNCTION LASERS ON SEMI-INSULATING SUBSTRATES BY M.B.E.LEE TP; BURRUS CA; CHO AY et al.1980; ELECTRON. LETTERS; GBR; DA. 1980; VOL. 16; NO 13; PP. 510-511; BIBL. 11 REF.Article

IN GAASP P-I-N PHOTODIODES WITH LOW DARK CURRENT AND SMALL CAPACITANCEBURRUS CA; DENTAI AG; LEE TP et al.1979; ELECTRON. LETTERS; GBR; DA. 1979; VOL. 15; NO 20; PP. 655-657; BIBL. 10 REF.Article

ALGAAS-GAAS DOUBLE-HETEROSTRUCTURE SMALL-AREA LIGHTEMITTING DIODES BY MOLECULAR-BEAM EPITAXY.LEE TP; HOLDEN WS; CHO AY et al.1978; APPL. PHYS. LETTERS; U.S.A.; DA. 1978; VOL. 32; NO 7; PP. 415-417; BIBL. 15 REF.Article

SELF-PULSING GAAS LASER FOR FIBER-DISPERSION MEASUREMENTSGLOGE D; CHINNOCK EL; LEE TP et al.1972; I.E.E.E. J. QUANTUM ELECTRON.; U.S.A.; DA. 1972; VOL. 8; NO 11; PP. 844-846; BIBL. 7 REF.Serial Issue

WAVELENGTH DIVISION MULTIPLEXING EXPERIMENT EMPLOYING DUAL-WAVELENGTH LEDS AND PHOTODETECTORSOGAWA K; LEE TP; BURBUS CA et al.1981; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1981; VOL. 17; NO 22; PP. 857-859; BIBL. 10 REF.Article

1.1 GBS PSEUDORANDOM PULSE-CODE MODULATION OF 1.27 MU M WAVELENGTH C.W. INGAASP/INP D.H. LASERS.ABBOTT SM; MUSKA WM; LEE TP et al.1978; ELECTRON. LETTERS; G.B.; DA. 1978; VOL. 14; NO 11; PP. 349-350; BIBL. 9 REF.Article

SMALL-AREA, HIGH-RADIANCE C.W. INGAASP L.E.D.S. EMITTING AT 1.2 TO 1.3 UM.DENTAI AG; LEE TP; BURRUS CA et al.1977; ELECTRON. LETTERS; G.B.; DA. 1977; VOL. 13; NO 16; PP. 484-485; BIBL. 13 REF.Article

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