LEDS AND PHOTODETECTORS FOR WAVELENGTH-DIVISION-MULTIPLEXED LIGH-WAVE SYSTEMSLEE TP.1982; OPT. LASER TECHNOL.; ISSN 0030-3992; GBR; DA. 1982; VOL. 14; NO 1; PP. 15-20; BIBL. 22 REF.Article

THE NONLINEARITY OF DOUBLE-HETEROSTRUCTURE LED'S FOR OPTICAL COMMUNICATIONS.LEE TP.1977; PROC. I.E.E.E.; U.S.A.; DA. 1977; VOL. 65; NO 9; PP. 1408-1410; BIBL. 8 REF.Article

EFFECT OF JUNCTION CAPACITANCE ON THE RISE TIME OF LED'S AND ON THE TURN-ON DELAY OF INJECTION LASERS.LEE TP.1975; BELL SYST. TECH. J.; U.S.A.; DA. 1975; VOL. 54; NO 1; PP. 53-68; BIBL. 1 P.Article

POWER AND MODULATION BANDWIDTH OF GAAS-ALGAAS HIGH-RADIANCE LED'S FOR OPTICAL COMMUNICATION SYSTEMSLEE TP; DENTAI AG.1978; I.E.E.E. J. QUANTUM ELECTRON; USA; DA. 1978; VOL. 14; NO 3; PP. 150-159; BIBL. 33 REF.Article

EFFECTS OF STEROIDS ON THE REGULATION OF THE LEVELS OF CYCLIC AMP IN HUMAN LYMPHOCYTES.LEE TP; REED CE.1977; BIOCHEM. BIOPHYS. RES. COMMUNIC.; U.S.A.; DA. 1977; VOL. 78; NO 3; PP. 998-1004; BIBL. 13 REF.Article

CHARACTERISTICS OF RF INJECTION LOCKING OF SELF-PULSING IN AN AS GA AS DH JUNCTION LASER.LEE TP; SERRA TJB.1976; I.E.E.E. J. QUANTUM ELECTRON; U.S.A.; DA. 1976; VOL. 12; NO 6; PP. 368-371; BIBL. 11 REF.Article

PICOSECOND FREQUENCY CHIRPING AND DYNAMIC LINE BROADENING IN INGAASP INJECTION LASERS UNDER FAST EXCITATIONCHINLON LIN; LEE TP; BURRUS CA et al.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 2; PP. 141-143; BIBL. 19 REF.Article

LARGE-AREA BACK-ILLUMINATED INGAAS/INP PHOTODIODES FOR USE AT 1 TO 1.6 MU M WAVELENGTHBURRUS CA; DENTAI AG; LEE TP et al.1981; OPT. COMMUN.; ISSN 0030-4018; NLD; DA. 1981; VOL. 38; NO 2; PP. 124-126; BIBL. 4 REF.Article

P-N-P-N OPTICAL DETECTORS AND LIGHT-EMITTING DIODESCOPELAND JA; DENTAI AG; LEE TP et al.1978; I.E.E.E. J. QUANTUM ELECTRON.; USA; DA. 1978; VOL. 14; NO 11; PP. 810-813; BIBL. 7 REF.Article

GAAS TWIN-LASER SETUP TO MEASURE MODE AND MATERIAL DISPERSION IN OPTICAL FIBERS.GLOGE D; CHINNOCK EL; LEE TP et al.1974; APPL. OPT.; U.S.A.; DA. 1974; VOL. 13; NO 2; PP. 261-263; BIBL. 10 REF.Article

INGAAS/INP P-I-N PHOTODIODES FOR LIGHTWAVE COMMUNICATIONS AT THE 0.95-1.65 MU M WAVELENGTHLEE TP; BURRUS CA JR; DENTAI AG et al.1981; IEEE J. QUANTUM ELECTRON.; ISSN 0018-9197; USA; DA. 1981; VOL. 17; NO 2; PP. 232-238; BIBL. 26 REF.Article

TRANSMISSION PROPERTIES OF RIB WAVEGUIDES FORMED BY ANODIZATION OF EPITAXIAL GAAS ON AL_XGA_1-XAS LAYERS.REINHART FK; LOGAN RA; LEE TP et al.1974; APPL. PHYS. LETTERS; U.S.A.; DA. 1974; VOL. 24; NO 6; PP. 270-272; BIBL. 4 REF.Article

WAVELENGTH DIVISION MULTIPLEXING EXPERIMENT EMPLOYING DUAL-WAVELENGTH LEDS AND PHOTODETECTORSOGAWA K; LEE TP; BURBUS CA et al.1981; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1981; VOL. 17; NO 22; PP. 857-859; BIBL. 10 REF.Article

1.1 GBS PSEUDORANDOM PULSE-CODE MODULATION OF 1.27 MU M WAVELENGTH C.W. INGAASP/INP D.H. LASERS.ABBOTT SM; MUSKA WM; LEE TP et al.1978; ELECTRON. LETTERS; G.B.; DA. 1978; VOL. 14; NO 11; PP. 349-350; BIBL. 9 REF.Article

SMALL-AREA, HIGH-RADIANCE C.W. INGAASP L.E.D.S. EMITTING AT 1.2 TO 1.3 UM.DENTAI AG; LEE TP; BURRUS CA et al.1977; ELECTRON. LETTERS; G.B.; DA. 1977; VOL. 13; NO 16; PP. 484-485; BIBL. 13 REF.Article

HIGH-EFFICIENCY SHORT-CAVITY INGAASP LASER WITH ONE HIGH-REFLECTIVITY MIRRORLEE TP; BURRUS CA; LIU PL et al.1982; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 19; PP. 805-806; BIBL. 3 REF.Article

MEASUREMENT OF BEAM PARAMETERS OF INDEX-GUIDED AND GAIN-GUIDED SINGLE-FREQUENCY INGAASP INJECTION LASERSLEE TP; BURRUS CA; MARCUSE D et al.1982; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 21; PP. 902-904; BIBL. 5 REF.Article

HIGH AVALANCHE GAIN IN SMALL-AREA INP PHOTODIODESLEE TP; BURRUS CA; DENTAI AG et al.1979; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1979; VOL. 35; NO 7; PP. 511-513; BIBL. 13 REF.Article

MATERIAL-DISPERSION-LIMITED OPERATION OF HIGH-BIT-RATE OPTICAL FIBRE DATA LINKS USING L.E.D.S.MUSKA WM; TINGYE LI; LEE TP et al.1977; ELECTRON. LETTERS; G.B.; DA. 1977; VOL. 13; NO 20; PP. 605-607; BIBL. 9 REF.Article

AL_XGA_1-XAS DOUBLE-HETEROSTRUCTURE RIB-WAVEGUIDE INJECTION LASER.LEE TP; BURRUS CA; MILLER BJ et al.1975; I.E.E.E. J. QUANTUM ELECTRON.; U.S.A.; DA. 1975; VOL. 11; NO 7 PART. 2; PP. 432-435; BIBL. 12 REF.Article

SHORT-CAVITY SINGLE-FREQUENCY INGAASP BURIED-HETEROSTRUCTURE LASERSLEE TP; BURRUS CA; LINKE RA et al.1983; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1983; VOL. 19; NO 3; PP. 82-84; BIBL. 9 REF.Article

VERY-HIGH-SPEED BACK-ILLUMINATED INGAAS/INP PIN PUNCH-THROUGH PHOTODIODESLEE TP; BURRUS CA; OGAWA K et al.1981; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1981; VOL. 17; NO 12; PP. 431-432; BIBL. 4 REF.Article

IMPROVED TWO-WAVELENGTH DEMULTIPLEXING IN GAASP PHOTODETECTORCAMPBELL JC; DENTAI AG; LEE TP et al.1980; IEEE J. QUANTUM ELECTRON.; ISSN 0018-9197; USA; DA. 1980; VOL. 16; NO 6; PP. 601-603; BIBL. 10 REF.Article

SMALL AREA INGAAS/INP P-I-N PHOTODIODES: FABRICATION, CHARACTERISTICS AND PERFORMANCE OF DEVICES IN 274 MB/S AND 45 MB/S LIGHTWAVE RECEIVERS AT 1.31 MU M WAVELENGTHLEE TP; BURRUS CA; DENTAI AG et al.1980; ELECTRON. LETTERS; GBR; DA. 1980; VOL. 16; NO 4; PP. 155-156; BIBL. 13 REF.Article

MEASURING HIGH-BANDWITH FIBRES IN THE 1.3 MU M REGION WITH PICOSECOND INGAASP INJECTION LASERS AND ULTRAFAST INGAAS DETECTORSLINC C; LIU PL; LEE TP et al.1981; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1981; VOL. 17; NO 13; PP. 438-440; BIBL. 13 REF.Article