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Intermixed quantum wires with steep lateral confinementLEIER, H; MAILE, B. E; FORCHEL, A et al.Microelectronic engineering. 1990, Vol 11, Num 1-4, pp 43-46, issn 0167-9317Conference Paper

Carrier capture in intermixed quantum wires with sharp lateral confinementLEIER, H; FORCHEL, A; MAILE, B. E et al.Applied physics letters. 1990, Vol 56, Num 1, pp 48-50, issn 0003-6951Article

In_xGa_1-xAs/GaAs pseudomorphic quantum wells - growth and thermal stabilityNICKEL, H; LOÊSCH, R; SCHLAPP, W et al.Surface science. 1990, Vol 228, Num 1-3, pp 340-343, issn 0039-6028Conference Paper

MBE grown AlGaN/GaN MODFETs with high breakdown voltageVESCAN, A; DIETRICH, R; WIESZT, A et al.Journal of crystal growth. 1999, Vol 201202, pp 327-331, issn 0022-0248Conference Paper

High speed selfaligned GaInP/GaAs HBBTsLEIER, H; MARTEN, A; BACHEM, K.-H et al.Electronics Letters. 1993, Vol 29, Num 10, pp 868-870, issn 0013-5194Article

Dimensionality dependence of the band-gap renormalization in two- and three-dimensional electron-hole plasmas in GaAsTRÄNKLE, G; LEIER, H; FORCHEL, A et al.Physical review letters. 1987, Vol 58, Num 4, pp 419-422, issn 0031-9007Article