au.\*:("LEONG, W. Y")
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Electrically enhanced erosion of porous Si material in electrolyte by pH modulation and its application in chronotherapyLEONG, W. Y; LONI, A; CANHAM, L. T et al.Physica status solidi. A, Applications and materials science (Print). 2007, Vol 204, Num 5, pp 1486-1490, issn 1862-6300, 5 p.Conference Paper
Electroluminescence from a pseudomorphic Si0.8Ge0.2 alloyROBBINS, D. J; CALCOTT, P; LEONG, W. Y et al.Applied physics letters. 1991, Vol 59, Num 11, pp 1350-1352, issn 0003-6951Article
Non-destructive characterisation of doped Si and SiGe epilayers using FTIR spectroscopic ellipsometry (FTIR-SE)PICKERING, C; LEONG, W. Y; GLASPER, J. L et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 89, Num 1-3, pp 146-150, issn 0921-5107Conference Paper
Spectroscopic ellipsometry characterization of strained and relaxed Si1-xGex epitaxial layersPICKERING, C; CARLINE, R. T; ROBBINS, D. J et al.Journal of applied physics. 1993, Vol 73, Num 1, pp 239-250, issn 0021-8979Article
Spectroscopic ellipsometry of Si1-xGex multi-quantum wellsCARLINE, R. T; PICKERING, C; CALCOTT, P et al.Superlattices and microstructures. 1993, Vol 14, Num 2-3, pp 157-165, issn 0749-6036Article
Efficient visible electroluminescence from highly porous silicon under cathodic biasCANHAM, L. T; LEONG, W. Y; BEALE, M. I. J et al.Applied physics letters. 1992, Vol 61, Num 21, pp 2563-2565, issn 0003-6951Article
The surface roughness and optical properties of high quality Si epitaxial layersNAYAR, V; PICKERING, C; PIDDUCK, A. J et al.Thin solid films. 1993, Vol 233, Num 1-2, pp 40-45, issn 0040-6090Conference Paper
Spectroscopic ellipsometry of epitaxial Si {100} surfacesNAYAR, V; LEONG, W. Y; PICKERING, C et al.Applied physics letters. 1992, Vol 61, Num 11, pp 1304-1306, issn 0003-6951Article
Atmospheric impregnation of porous ilicon at room temperatureCANHAM, L. T; HOULTON, M. R; LEONG, W. Y et al.Journal of applied physics. 1991, Vol 70, Num 1, pp 422-431, issn 0021-8979Article
Electronic quality of vapour phase epitaxial Si grown at reduced temperatureLEONG, W. Y; CANHAM, L. T; YOUNG, I. M et al.Thin solid films. 1990, Vol 184, pp 131-137, issn 0040-6090, 7 p.Conference Paper
p-type doping in si molecular beam epitaxy by coevaporation of boronKUBIAK, R. A. A; LEONG, W. Y; PARKER, E. H. C et al.Applied physics letters. 1984, Vol 44, Num 9, pp 878-880, issn 0003-6951Article
Inter-edge-mode scattering in a high-mobility strained silicon two-dimensional electron systemGRIFFIN, N; DUNFORD, R. B; PEPPER, M et al.Journal of physics. Condensed matter (Print). 2000, Vol 12, Num 8, pp 1811-1818, issn 0953-8984Article
In-situ dual-wavelength and ex-situ spectroscopic ellipsometry studies of strained SiGe epitaxial layers and multi-quantum well structuresPICKERING, C; CARLINE, R. T; ROBBINS, D. J et al.Thin solid films. 1993, Vol 233, Num 1-2, pp 126-130, issn 0040-6090Conference Paper
Potential-enhanced doping of Si grown by molecular beam epitaxyKUBIAK, R. A. A; LEONG, W. Y; PARKER, E. H. C et al.Journal of the Electrochemical Society. 1985, Vol 132, Num 11, pp 2738-2742, issn 0013-4651Article
Potential enhanced Sb and As doping in Si molecular beam epitaxyKUBIAK, R. A. A; LEONG, W. Y; PARKER, E. H. C et al.Applied physics letters. 1985, Vol 46, Num 6, pp 565-567, issn 0003-6951Article
Effects of plasma treatments on structural and electrical properties of methyl-doped silicon oxide low dielectric constant filmLEONG, W. Y; TSANG, C. F; LI, H. Y et al.Thin solid films. 2006, Vol 496, Num 2, pp 402-411, issn 0040-6090, 10 p.Article
Low-dimensional inverted Si/SiGe modulation-doped electron gases using selective ex-situ ion implantationPAUL, D. J; AHMED, A; CHURCHILL, A. C et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 89, Num 1-3, pp 111-115, issn 0921-5107Conference Paper
Efficiency of adsorbents for removal of organosulphur compounds in waterLEONG, W. Y; TEO, E. H; LIM, C. H et al.Water science and technology. 1998, pp 139-146, issn 0273-1223, isbn 0-08-043393-6Conference Paper
Evolution of surface morphology and strain during SiGe epitaxyPIDDUCK, A. J; ROBBINS, D. J; CULLIS, A. G et al.Thin solid films. 1992, Vol 222, Num 1-2, pp 78-84, issn 0040-6090Conference Paper
A solution to boron contamination at the substrate/epilayer interface of silicon grown by molecular beam epitaxyKUBIAK, R. A. A; LEONG, W. Y; DOWSETT, M. G et al.Journal of vacuum science and technology. A. Vacuum, surfaces, and films. 1986, Vol 4, Num 4, pp 1905-1907, issn 0734-2101Article
Coevaporation phosphorus doping in Si grown by molecular beam epitaxyKUBIAK, R. A. A; PATEL, G; LEONG, W. Y et al.Applied physics. A, Solids and surfaces. 1986, Vol 41, Num 3, pp 233-235, issn 0721-7250Article
