Influence of the damage caused by uniaxial compression on the 1/f noise in GaAsLEVINSHTEIN, M. E; RUMYANTSEV, S. L.Soviet physics. Semiconductors. 1990, Vol 24, Num 10, pp 1125-1130, issn 0038-5700, 6 p.Article

Difference between static and dynamic frictional forcesLEVINSHTEIN, M. E; RUMYANTSEV, S. L; TYBULEWICZ, A et al.Physics of the solid state. 1993, Vol 35, Num 4, pp 490-495, issn 1063-7834Article

Relaxation of the photoconductivity and 1/f noise in GaAs subjected to damaging compressionLEVINSHTEIN, M. E; RUMYANTSEV, S. L.Soviet physics. Semiconductors. 1991, Vol 25, Num 1, pp 97-99, issn 0038-5700Article

Temperature dependence of the low-frequency noise in structurally perfect GaAs and after destructive compressionD'YAKONOVA, N. V; LEVINSHTEIN, M. E; RUMYANTSEV, S. L et al.Soviet physics. Semiconductors. 1991, Vol 25, Num 2, pp 217-218, issn 0038-5700Article

Relationship between critical charge density, holding current, and maximum current density in optically triggered silicon carbide thyristorsYUFEREV, V. S; LEVINSHTEIN, M. E; PALMOUR, J. W et al.Semiconductor science and technology. 2013, Vol 28, Num 10, issn 0268-1242, 105009.1-105009.6Article

Use of minority carriers in noise spectroscopy for the determination of local level parameters in 6H-SiCPALMOUR, J. W; LEVINSHTEIN, M. E; RUMYANTSEV, S. L et al.Semiconductor science and technology. 1996, Vol 11, Num 8, pp 1146-1150, issn 0268-1242Article

Nature of the 1/f noise in 6H-SiCLEVINSHTEIN, M. E; PALMOUR, J. W; RUMYANTSEV, S. L et al.Semiconductor science and technology. 1994, Vol 9, Num 11, pp 2080-2084, issn 0268-1242Article

Nature of the bulk 1/f noise in GaAs and Si (review)D'YAKONOVA, N. V; LEVINSHTEIN, M. E; RUMYANTEV, S. L et al.Soviet physics. Semiconductors. 1991, Vol 25, Num 12, pp 1241-1265, issn 0038-5700Article

Bruit en 1/f et relaxation de longue durée de la photoconductivité dans GaAsDYAKONOVA, N. V; LEVINSHTEIN, M. E; RUMYANTSEV, S. L et al.Fizika i tehnika poluprovodnikov. 1989, Vol 23, Num 10, pp 1828-1833, issn 0015-3222Article

Optical triggering of 12 kV, 100 A 4H-SiC thyristorsRUMYANTSEV, S. L; LEVINSHTEIN, M. E; SHUR, M. S et al.Semiconductor science and technology. 2012, Vol 27, Num 1, issn 0268-1242, 015012.1-015012.4Article

A model of the 1/f noise in a forward-biased p-n diodeDMITRIEV, A. P; LEVINSHTEIN, M. E; KOLESNIKOVA, E. N et al.Semiconductor science and technology. 2008, Vol 23, Num 1, issn 0268-1242, 015011.1-015011.5Article

On the low frequency noise mechanisms in GaN/AlGaN HFETsRUMYANTSEV, S. L; DENG, Y; SHUR, S et al.Semiconductor science and technology. 2003, Vol 18, Num 6, pp 589-593, issn 0268-1242, 5 p.Article

First SiC dynistorDMITRIEV, V. A; LEVINSHTEIN, M. E; VAINSHTEIN, S. N et al.Electronics Letters. 1988, Vol 24, Num 16, pp 1031-1033, issn 0013-5194Article

Fast turn-off of high voltage 4H-SiC npn BJTs from the saturation on-state regimeIVANOV, P. A; LEVINSHTEIN, M. E; PALMOUR, J. W et al.Semiconductor science and technology. 2010, Vol 25, Num 4, issn 0268-1242, 045030.1-045030.3Article

Channel mobility and on-resistance of vertical double implanted 4H-SiC MOSFETs at elevated temperaturesRUMYANTSEV, S. L; SHUR, M. S; LEVINSHTEIN, M. E et al.Semiconductor science and technology. 2009, Vol 24, Num 7, issn 0268-1242, 075011.1-075011.6Article

Specific features of quasineutral carrier transport modes in semiconductors and semiconductor structuresMNATSAKANOV, T. T; TANDOEV, A. G; YURKOV, S. N et al.Semiconductor science and technology. 2009, Vol 24, Num 7, issn 0268-1242, 075006.1-075006.8Article

Current gain of 4H-SiC high-voltage BJTs at reduced temperaturesIVANOV, P. A; LEVINSHTEIN, M. E; PALMOUR, J. W et al.Semiconductor science and technology. 2007, Vol 22, Num 6, pp 613-615, issn 0268-1242, 3 p.Article

On the thermal stability of high-voltage rectifier diodesMNATSAKANOV, T. T; LEVINSHTEIN, M. E; FREIDLIN, A. S et al.Semiconductor science and technology. 2006, Vol 21, Num 9, pp 1244-1249, issn 0268-1242, 6 p.Article

Low frequency noise in 4H-SiC BJTsRUMYANTSEV, S. L; LEVINSHTEIN, M. E; AGARWAL, A. K et al.Semiconductor science and technology. 2004, Vol 19, Num 7, pp 950-952, issn 0268-1242, 3 p.Article

Carrier mobility model for simulation of SiC-based electronic devicesMNATSAKANOV, T. T; LEVINSHTEIN, M. E; POMORTSEVA, L. I et al.Semiconductor science and technology. 2002, Vol 17, Num 9, pp 974-977, issn 0268-1242Article

Transient characteristics of a 1.8 kV, 3.8 A 4H-SiC bipolar junction transistorIVANOV, P. A; LEVINSHTEIN, M. E; AGARWAL, A. K et al.Semiconductor science and technology. 2001, Vol 16, Num 6, pp 521-525, issn 0268-1242Article

Frequency properties of 4H-SiC thyristors at high current densityLEVINSHTEIN, M. E; PALMOUR, J. W; RUMYANTSEV, S. L et al.Semiconductor science and technology. 1999, Vol 14, Num 2, pp 207-209, issn 0268-1242Article

Turn-on process in high voltage 4H-SiC thyristorsDYAKONOVA, N. V; LEVINSHTEIN, M. E; PALMOUR, J. W et al.Semiconductor science and technology. 1998, Vol 13, Num 2, pp 241-243, issn 0268-1242Article

High current (1300 A) optical triggering of a 12 kV 4H-SiC thyristorRUMYANTSEV, S. L; LEVINSHTEIN, M. E; SHUR, M. S et al.Semiconductor science and technology. 2013, Vol 28, Num 4, issn 0268-1242, 045016.1-045016.3Article

Two channels of non-radiative recombination in InGaN/GaN LEDsAVERKIEV, N. S; CHERNYAKOV, A. E; LEVINSHTEIN, M. E et al.Physica. B, Condensed matter. 2009, Vol 404, Num 23-24, pp 4896-4898, issn 0921-4526, 3 p.Conference Paper