ac gate-induced fano resonance and peak splitting of conductance in a quantum dotMOU YANG; LI, Shu-Shen.Physical review B. Condensed matter and materials physics. 2004, Vol 70, Num 4, pp 045318.1-045318.5, issn 1098-0121Article

Level-oscillation-induced pump effect in a quantum dot with asymmetric constrictionsMOU YANG; LI, Shu-Shen.Physical review B. Condensed matter and materials physics. 2005, Vol 71, Num 12, pp 125307.1-125307.4, issn 1098-0121Article

Cytogenetic study of three Oreolalax pelobatoides from YunnanLI SHU-SHEN; FEI LIANG; YE CHANG-YUAN et al.Dongwu xuébào. 1991, Vol 37, Num 2, pp 216-223, issn 0001-7302Article

Effective-mass theory for hierarchical self-assembly of GaAs/Al_xGa_1-xAs quantum dotsLI, Shu-Shen; KAI CHANG; XIA, Jian-Bai et al.Physical review B. Condensed matter and materials physics. 2005, Vol 71, Num 15, pp 155301.1-155301.7, issn 1098-0121Article

Spin-flip relaxation in a two-electron quantum dot with spin-phonon couplingWANG, Zi-Wu; LI, Shu-Shen.Solid state communications. 2011, Vol 151, Num 22, pp 1667-1671, issn 0038-1098, 5 p.Article

Lattice relaxation of graphene under high magnetic fieldWANG, Zi-Wu; LI, Shu-Shen.Journal of physics. Condensed matter (Print). 2012, Vol 24, Num 26, issn 0953-8984, 265302.1-265302.7Article

The effects of nonlinear couplings and external magnetic field on the thermal entanglement in a two-spin-qutrit systemZHANG, Guo-Feng; LI, Shu-Shen.Optics communications. 2006, Vol 260, Num 1, pp 347-350, issn 0030-4018, 4 p.Article

A criterion for local interconvertibility between all-tripartite Gaussian statesLIANG WANG; LI, Shu-Shen; YAN, Yijing et al.Journal of physics. A, mathematical and general. 2004, Vol 37, Num 44, pp 10699-10710, issn 0305-4470, 12 p.Article

Passivation of Cul Quantum DotsJING WANG; LI, Shu-Shen; YING LIU et al.Journal of physical chemistry. C. 2012, Vol 116, Num 39, pp 21039-21045, issn 1932-7447, 7 p.Article

First-principles study of magnetic properties in Mo-doped grapheneJUN KANG; DENG, Hui-Xiong; LI, Shu-Shen et al.Journal of physics. Condensed matter (Print). 2011, Vol 23, Num 34, issn 0953-8984, 346001.1-346001.6Article

Method for measuring two-qubit entanglement of formation by local operations and classical communicationBAI, Yan-Kui; LI, Shu-Shen; ZHENG, Hou-Zhi et al.Journal of physics. A, mathematical and general. 2005, Vol 38, Num 40, pp 8633-8639, issn 0305-4470, 7 p.Article

First-principles study of the electronic structures and magnetic properties of 3d transition metal-doped anatase TiO₂HAOWEI PENG; JINGBO LI; LI, Shu-Shen et al.Journal of physics. Condensed matter (Print). 2008, Vol 20, Num 12, issn 0953-8984, 125207.1-125207.6Article

First-principles study of UC₂ and U₂C₃HONGLIANG SHI; PING ZHANG; LI, Shu-Shen et al.Journal of nuclear materials. 2010, Vol 396, Num 2-3, pp 218-222, issn 0022-3115, 5 p.Article

Au-Decorated Silicene: Design of a High-Activity Catalyst toward CO OxidationCHONG LI; SHENGXUE YANG; LI, Shu-Shen et al.Journal of physical chemistry. C. 2013, Vol 117, Num 1, pp 483-488, issn 1932-7447, 6 p.Article

Electronic Structural Moiré Pattern Effects on MoS₂/MoSe₂ 2D HeterostructuresJUN KANG; JINGBO LI; LI, Shu-Shen et al.Nano letters (Print). 2013, Vol 13, Num 11, pp 5485-5490, issn 1530-6984, 6 p.Article

Calculating Band Alignment between Materials with Different Structures: The Case of Anatase and Rutile Titanium DioxideJUN KANG; FENGMIN WU; LI, Shu-Shen et al.Journal of physical chemistry. C. 2012, Vol 116, Num 39, pp 20765-20768, issn 1932-7447, 4 p.Article

Method for detecting concurrence without the structural physical approximation by local operations and classical communicationBAI, Yan-Kui; LI, Shu-Shen; ZHENG, Hou-Zhi et al.Journal of physics. A, mathematical and general. 2006, Vol 39, Num 20, pp 5847-5856, issn 0305-4470, 10 p.Article

Photoluminescence pressure coefficients of InAs/GaAs quantum dotsLUO, Jun-Wei; LI, Shu-Shen; XIA, Jian-Bai et al.Physical review B. Condensed matter and materials physics. 2005, Vol 71, Num 24, pp 245315.1-245315.5, issn 1098-0121Article

A Fully Three-Dimensional Atomistic Quantum Mechanical Study on Random Dopant-Induced Effects in 25-nm MOSFETsJIANG, Xiang-Wei; DENG, Hui-Xiong; LUO, Jun-Wei et al.I.E.E.E. transactions on electron devices. 2008, Vol 55, Num 7, pp 1720-1726, issn 0018-9383, 7 p.Article

Stable p- and n-type doping of few-layer graphene/graphiteXIUQING MENG; TONGAY, Sefaattin; JUN KANG et al.Carbon (New York, NY). 2013, Vol 57, pp 507-514, issn 0008-6223, 8 p.Article

Electronic structure and optical property of semiconductor nanocrystallitesXIA, Jian-Bai; KAI CHANG; LI, Shu-Shen et al.Computational materials science. 2004, Vol 30, Num 3-4, pp 274-277, issn 0927-0256, 4 p.Conference Paper

Electronic structures of wurtzite ZnO, BeO, MgO and p-type doping in Zn_1-xY_xO (Y = Mg, Be)QIANG XU; ZHANG, Xiu-Wen; FAN, Wei-Jun et al.Computational materials science. 2008, Vol 44, Num 1, pp 72-78, issn 0927-0256, 7 p.Conference Paper