au.\*:("LICHTENSTEIGER M")
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UPS/XPS STUDY OF REACTIVE AND NON-REACTIVE SRTIO3(100) SURFACES: ADSORPTION OF H2OWEBB C; LICHTENSTEIGER M.1981; SURF. SCI.; ISSN 0039-6028; NLD; DA. 1981; VOL. 107; NO 1; PP. L345-L349; BIBL. 11 REF.Article
APPLICATION OF INTERFACE DEMARCATION TO THE STUDY OF FACET GROWTH AND SEGREGATION: GERMANIUM.WITT AF; LICHTENSTEIGER M; GATOS HC et al.1974; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1974; VOL. 121; NO 6; PP. 787-790; BIBL. 10 REF.Article
CRYSTAL GROWTH AND STEADY-STATE SEGREGATION UNDER ZERO GRAVITY: INSB.WITT AF; GATOS HC; LICHTENSTEIGER M et al.1975; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1975; VOL. 122; NO 2; PP. 276-283; BIBL. 7 REF.Article
VALENCE BAND STATES OF SEMI-MAGNETIC SEMICONDUCTORS: CD1-XMNXTEWEBB C; KAMINSKA M; LICHTENSTEIGER M et al.1981; SOLID STATE COMMUN.; ISSN 0038-1098; USA; DA. 1981; VOL. 40; NO 5; PP. 609-611; BIBL. 10 REF.Article
CRYSTAL GROWTH AND SEGREGATION UNDER ZERO GRAVITY: GEWITT AF; GATOS HC; LICHTENSTEIGER M et al.1978; J. ELECTROCHEM. SOC.; USA; DA. 1978; VOL. 125; NO 11; PP. 1832-1840; BIBL. 21 REF.Article
CRYSTAL GROWTH AND SEGREGATION BEHAVIOR UNDER ZERO GRAVITY CONDITIONS: INSB.GATOS HC; WITT AF; HERMAN CJ et al.1975; A.A.S. SCI. TECHNOL. SER.; U.S.A.; DA. 1975; VOL. 38; PP. 7-26; BIBL. 7 REF.; (SKYLAB SCI. EXP. SYMP. 140TH ANNU. MEET. AM. ASSOC. ADV. SCI. PROC.; SAN FRANCISCO; 1974)Conference Paper
CURRENT-CONTROLLED GROWTH AND DOPANT MODULATION IN LIQUID PHASE EPITAXYKUMAGAWA M; WITT AF; LICHTENSTEIGER M et al.1973; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1973; VOL. 120; NO 4; PP. 583-584; BIBL. 4 REF.Serial Issue
Characterization of oxidized CdS by SIMS/XPSWEBB, C; LICHTENSTEIGER, M.Journal of electron spectroscopy and related phenomena. 1986, Vol 41, Num 2, pp 125-144, issn 0368-2048Article
Gain degradation mechanism for channel electron multipliersLICHTENSTEIGER, M; WEBB, C.Journal of vacuum science and technology. A. Vacuum, surfaces, and films. 1984, Vol 2, Num 4, pp 1513-1515, issn 0734-2101Article
ELECTRON MOBILITY AND FREE-CARRIER ABSORPTION IN GAAS: DETERMINATION OF THE COMPENSATION RATIOWALUKIEWICZ W; LAGOWSKI L; JASTRZEBSKI L et al.1979; J. APPL. PHYS.; USA; DA. 1979; VOL. 50; NO 2; PP. 899-909; BIBL. 38 REF.Article
ELECTRON MOBILITY AND FREE-CARRIER ABSORPTION IN INP; DETERMINATION OF THE COMPENSATION RATIOWALUKIEWICZ W; LAGOWSKI J; JASTRZEBSKI L et al.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 5; PP. 2659-2668; BIBL. 30 REF.Article
High frequency ventilation : comparison of an electronic flow interrupter and a new pneumatic oscillatorCORDERO, L; TALLMAN, R; LICHTENSTEIGER, M et al.Respiratory care. 1992, Vol 37, Num 11, pp 1241-1249, issn 0020-1324Article
Electron stimulated adsorption on semiconductor surfacesWEBB, C; LAGOWSKI, J; LICHTENSTEIGER, M et al.Surface science. 1984, Vol 138, Num 2-3, pp 399-416, issn 0039-6028Article
Floating zone growth of silicon in magnetic fields : IV. Rotating magnetic fieldsDOLD, P; CRÖLL, A; LICHTENSTEIGER, M et al.Journal of crystal growth. 2001, Vol 231, Num 1-2, pp 95-106, issn 0022-0248Article
Measurement of temperature fluctuations and microscopic growth rates in a silicon floating zone under microgravitySCHWEIZER, M; CRÖLL, A; DOLD, P et al.Journal of crystal growth. 1999, Vol 203, Num 4, pp 500-510, issn 0022-0248Article
