High-performance poly-Si nanowire NMOS transistorsLIN, Horng-Chih; SU, Chun-Jung.IEEE transactions on nanotechnology. 2007, Vol 6, Num 2, pp 206-212, issn 1536-125X, 7 p.Article

Spatially resolving the hot carrier degradations of poly-Si thin-film transistors using a novel test structureLIN, Horng-Chih; LEE, Ming-Hsien; CHANG, Kai-Hsiang et al.IEEE electron device letters. 2006, Vol 27, Num 7, pp 561-563, issn 0741-3106, 3 p.Article

Characteristics of n-Type Junctionless Poly-Si Thin-Film Transistors With an Ultrathin ChannelLIN, Horng-Chih; LIN, Cheng-I; HUANG, Tiao-Yuan et al.IEEE electron device letters. 2012, Vol 33, Num 1, pp 53-55, issn 0741-3106, 3 p.Article

Performance Enhancement of Thin-Film Transistors With Suspended Poly-Si Nanowire Channels by Embedding Silicon Nanocrystals in Gate NitrideKUO, Chia-Hao; LIN, Horng-Chih; HUANG, Tiao-Yuan et al.IEEE electron device letters. 2012, Vol 33, Num 3, pp 390-392, issn 0741-3106, 3 p.Article

Fabrication of High-Performance ZnO Thin-Film Transistors With Submicrometer Channel LengthLIN, Horng-Chih; LYU, Rong-Jhe; HUANG, Tiao-Yuan et al.IEEE electron device letters. 2013, Vol 34, Num 9, pp 1160-1162, issn 0741-3106, 3 p.Article

Origins of Performance Enhancement in Independent Double-Gated Poly-Si Nanowire DevicesHSU, Hsing-Hui; LIN, Horng-Chih; HUANG, Tiao-Yuan et al.I.E.E.E. transactions on electron devices. 2010, Vol 57, Num 4, pp 905-912, issn 0018-9383, 8 p.Article

Characterization of AC Hot-Carrier Effects in Poly-Si Thin-Film TransistorsLIN, Horng-Chih; CHANG, Kai-Hsiang; HUANG, Tiao-Yuan et al.I.E.E.E. transactions on electron devices. 2009, Vol 56, Num 11, pp 2664-2669, issn 0018-9383, 6 p.Article

H₂ and NH₃ plasma passivation on poly-Si TFTs with bottom-sub-gate induced electrical junctionsYU, Cheng-Ming; LIN, Horng-Chih; HUANG, Tiao-Yuan et al.Journal of the Electrochemical Society. 2003, Vol 150, Num 12, pp G843-G848, issn 0013-4651Article

Characterizations of polycrystalline silicon nanowire thin-film transistors enhanced by metal-induced lateral crystallizationSU, Chun-Jung; HUANG, Yu-Feng; LIN, Horng-Chih et al.Solid-state electronics. 2012, Vol 77, pp 20-25, issn 0038-1101, 6 p.Conference Paper

A simple method for sub-100 nm pattern generation with I-line double-patterning techniqueTSAI, Tzu-I; LIN, Horng-Chih; JIAN, Min-Feng et al.Microelectronics and reliability. 2010, Vol 50, Num 5, pp 584-588, issn 0026-2714, 5 p.Article

Low-Operating-Voltage Ultrathin Junctionless Poly-Si Thin-Film Transistor Technology for RF ApplicationsTSAI, Tzu-I; CHEN, Kun-Ming; LIN, Horng-Chih et al.IEEE electron device letters. 2012, Vol 33, Num 11, pp 1565-1567, issn 0741-3106, 3 p.Article

Impacts of Nanocrystal Location on the Operation of Trap-Layer-Engineered Poly-Si Nanowired Gate-All-Around SONOS Memory DevicesLUO, Cheng-Wei; LIN, Horng-Chih; LEE, Ko-Hui et al.I.E.E.E. transactions on electron devices. 2011, Vol 58, Num 7, pp 1879-1885, issn 0018-9383, 7 p.Article

Impacts of SiN deposition parameters on n-channel metal-oxide-semiconductor field-effect-transistorsLU, Ching-Sen; LIN, Horng-Chih; HUANG, Tiao-Yuan et al.Solid-state electronics. 2008, Vol 52, Num 10, pp 1584-1588, issn 0038-1101, 5 p.Conference Paper

Simultaneous etching of polysilicon materials with different doping types by low-damage transformer-coupled plasma techniqueHUNG, Chi-Chao; LIN, Horng-Chih; WANG, Meng-Fan et al.Microelectronic engineering. 2002, Vol 63, Num 4, pp 405-416, issn 0167-9317Article

Impacts of Multiple-Gated Configuration on the Characteristics of Poly-Si Nanowire SONOS DevicesHSU, Hsing-Hui; LIN, Horng-Chih; LUO, Cheng-Wei et al.I.E.E.E. transactions on electron devices. 2011, Vol 58, Num 3, pp 641-649, issn 0018-9383, 9 p.Article

Trigated Poly-Si Nanowire SONOS Devices for Flat-Panel ApplicationsLIN, Horng-Chih; LIU, Ta-Wei; HSU, Hsing-Hui et al.IEEE transactions on nanotechnology. 2010, Vol 9, Num 3, pp 386-391, issn 1536-125X, 6 p.Article

Impacts of a buffer layer and hydrogen-annealed wafers on the performance of strained-channel nMOSFETs with SiN-capping layerTSAI, Tzu-I; LIN, Horng-Chih; LEE, Yao-Jen et al.Solid-state electronics. 2008, Vol 52, Num 10, pp 1518-1524, issn 0038-1101, 7 p.Conference Paper

Channel backscattering characteristics of uniaxially strained nanoscale CMOSFETsLIN, Hong-Nien; CHEN, Hung-Wei; KO, Chih-Hsin et al.IEEE electron device letters. 2005, Vol 26, Num 9, pp 676-678, issn 0741-3106, 3 p.Article

Effects of process and gate doping species on negative-bias-temperature instability of p-channel MOSFETsLEE, Da-Yuan; HUANG, Tiao-Yuan; LIN, Horng-Chih et al.Journal of the Electrochemical Society. 2004, Vol 151, Num 2, pp G144-G148, issn 0013-4651Article

Characteristics of Planar Junctionless Poly-Si Thin-Film Transistors With Various Channel ThicknessLIN, Horng-Chih; LIN, Cheng-I; LIN, Zer-Ming et al.I.E.E.E. transactions on electron devices. 2013, Vol 60, Num 3, pp 1142-1148, issn 0018-9383, 7 p.Article

A Novel Scheme for Fabricating CMOS Inverters With Poly-Si Nanowire ChannelsKUO, Chia-Hao; LIN, Horng-Chih; LEE, I.-Che et al.IEEE electron device letters. 2012, Vol 33, Num 6, pp 833-835, issn 0741-3106, 3 p.Article

Poly-silicon nanowire field-effect transistor for ultrasensitive and label-free detection of pathogenic avian influenza DNALIN, Chih-Heng; HUNG, Cheng-Hsiung; HSIAO, Cheng-Yun et al.Biosensors & bioelectronics. 2009, Vol 24, Num 10, pp 3019-3024, issn 0956-5663, 6 p.Article

Effect of ITO electrode with different oxygen contents on the electrical characteristics of HfO_x RRAM devicesZHONG, Chia-Wen; TZENG, Wen-Hsien; TSAI, Ming-Jinn et al.Surface & coatings technology. 2013, Vol 231, pp 563-566, issn 0257-8972, 4 p.Conference Paper

Resistive switching characteristics of multilayered (HfO₂/Al₂O₃)_n n = 19 thin filmTZENG, Wen-Hsien; ZHONG, Chia-Wen; LEE, Heng-Yuan et al.Thin solid films. 2012, Vol 520, Num 8, pp 3415-3418, issn 0040-6090, 4 p.Conference Paper

A carbon nanotube field effect transistor with tunable conduction-type by electrostatic effectsCHEN, Bae-Horng; WEI, Jeng-Hua; LO, Po-Yuan et al.Solid-state electronics. 2006, Vol 50, Num 7-8, pp 1341-1348, issn 0038-1101, 8 p.Article