LOW TEMPERATURE LIQUID PHASE EPITAXY OF SILICONLINNEBACH R; BAUSER E.1982; J. CRYSTAL GROWTH; ISSN 0022-0248; NLD; DA. 1982; VOL. 57; NO 1; PP. 43-47; BIBL. 11 REF.Article

LIQUID PHASE EPITAXY OF ALSB FROM SB SOLUTIONSLINNEBACH R; BENZ KW.1981; J. CRYST. GROWTH; ISSN 0022-0248; NLD; DA. 1981; VOL. 55; NO 3; PP. 531-538; BIBL. 19 REF.Article

PHOTOLUMINESCENCE OF SHALLOW ACCEPTORS IN EPITAXIAL AL_XGA_1-XASSTRINGFELLOW GB; LINNEBACH R.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 4; PP. 2212-2217; BIBL. 24 REF.Article

Simultaneous verification of pairs of liquidus and solidus data in the Ga-Al-As systemLINNEBACH, R. N.Journal of crystal growth. 1991, Vol 110, Num 3, pp 626-630, issn 0022-0248Article

Anomaly in the Ga-Si phase diagram : nonretrograde solubility of Ga in Si layers grown by liquid-phase epitaxyLINNEBACH, R. N.Journal of applied physics. 1990, Vol 67, Num 11, pp 6794-6797, issn 0021-8979Article

ZERO-PHONON TRANSITION OF FREE ELECTRONS TO BOUND HOLES IN HEAVILY GALLIUM-DOPED SILICONDAI R; UEBBING R; LINNEBACH R et al.1982; JOURNAL OF LUMINESCENCE; ISSN 0022-2313; NLD; DA. 1982; VOL. 26; NO 3; PP. 233-238; BIBL. 11 REF.Article

OPTICAL STUDIES OF FREE AND BOUND EXCITONIC STATES IN GASB. EVIDENCE FOR DEEP A⁺-COMPLEXES.RUHLE W; JAKOWETZ W; LINNEBACH R et al.1976; PHYS. STATUS SOLIDI, B; ALLEM.; DA. 1976; VOL. 73; NO 1; PP. 255-264; ABS. ALLEM.; BIBL. 18 REF.Article

A DENSE ELECTRON-HOLE-LIQUID IN GA_0.08AL_0.92ASBIMBERG D; BLUDAU W; LINNEBACH R et al.1981; SOLID STATE COMMUN.; ISSN 0038-1098; USA; DA. 1981; VOL. 37; NO 12; PP. 987-991; BIBL. 14 REF.Article

Application of holographic optical elements in optical memory devicesLINNEBACH, R; GILLESSEN, K; GERMANN, R et al.Japanese journal of applied physics. 1989, Vol 28, pp 209-211, issn 0021-4922, suppl. 3Conference Paper