EPD INVESTIGATION IN LEC-GROWN SILICON-DOPED GALLIUM ARSENIDEFORNARI R; PAORICI C; ZANOTTI L et al.1983; CRYSTAL RESEARCH AND TECHNOLOGY (1979); ISSN 0232-1300; DDR; DA. 1983; VOL. 18; NO 2; PP. 157-164; BIBL. 30 REF.Article

EFFECT OF MELT STOICHIOMETRY ON TWIN FORMATION IN LEC GAASCHEN RT; HOLMES DE.1982; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1982; VOL. 129; NO 10; PP. 2382-2383; BIBL. 5 REF.Article

PHOTOLUMINESCENCE EVALUATION OF SEMI-INSULATING GAAS GROWN BY THE LIQUID ENCAPSULATED CZOCHRALSKI TECHNIQUESWAMINATHAN V; VON NEIDA AR; CARUSO R et al.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 9; PP. 6471-6474; BIBL. 21 REF.Article

LEC GROWTH OF GASB SINGLE CRYSTALS USING BORIC OXIDEKATSUI A; UEMURA C.1980; JPN. J. APPL. PHYS.; ISSN 0021-4922; JPN; DA. 1980; VOL. 19; NO 6; PP. L318-L320; BIBL. 6 REF.Article

IN-SITU SYNTHESIS AND GROWTH OF INDIUM PHOSPHIDEHYDER SB; HOLLOWAY CJ JR.1983; JOURNAL OF ELECTRONIC MATERIALS; ISSN 0361-5235; USA; DA. 1983; VOL. 12; NO 3; PP. 575-585; BIBL. 7 REF.Article

QUANTITATIVE ESR ANALYSIS OF DEEP DEFECTS IN LEC-GROWN GAPKAUFMANN V.1981; J. ELECTRON. MATER.; ISSN 0361-5235; USA; DA. 1981; VOL. 10; NO 2; PP. 347-360; BIBL. 16 REF.Article

A NOVEL ENCAPSULANT MATERIAL FOR LEC GROWTH OF GASBMIYAZAWA S; KONDO S; NAGANUMA M et al.1980; J. CRYST. GROWTH; ISSN 0022-0248; NLD; DA. 1980; VOL. 49; NO 4; PP. 670-674; BIBL. 7 REF.Article

ANNEALING TECHNIQUE FOR LEC GROWN TWIN-FREE INP CRYSTALSBONNER WA.1980; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1980; VOL. 127; NO 8; PP. 1798-1800; BIBL. 7 REF.Article

A servo-controlled capacitive pressure sensor using a capped-cylinder structure microfabricated by a three-mask processPARK, Jae-Sung; GIANCHANDANI, Yogesh B.Journal of microelectromechanical systems. 2003, Vol 12, Num 2, pp 209-220, issn 1057-7157, 12 p.Article

Growth of large-diameter ZnTe single crystals by liquid-encapsulated melt growth methodsASAHI, T; YABE, T; SATO, K et al.Journal of electronic materials. 2004, Vol 33, Num 6, pp 651-653, issn 0361-5235, 3 p.Conference Paper

DISLOCATIONS IN GAASJACOB G; FARGES JP; SCHEMALI G et al.1982; J. CRYST. GROWTH; ISSN 0022-0248; NLD; DA. 1982; VOL. 57; NO 2; PP. 245-258; BIBL. 38 REF.Article

FORMATION OF DISLOCATIONS DURING LIQUID ENCAPSULATED CZOCHRALSKI GROWTH OF GAAS SINGLE CRYSTALSDUSEAUX M; JACOB G.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 40; NO 9; PP. 790-793; BIBL. 21 REF.Article

GROWTH OF ANTIMONY DOPED INP SINGLE CRYSTALBALLMAN AA; BROWN H.1982; J. CRYST. GROWTH; ISSN 0022-0248; NLD; DA. 1982; VOL. 57; NO 3; PP. 516-518; BIBL. 15 REF.Article

OBSERVATIONS OF DOUBLE DOPED, LOW DISLOCATION DENSITY INP BY TRANSMISSION ELECTRON MICROSCOPYFELDMAN RD; BALLMAN AA.1982; MATERIALS LETTERS; ISSN 511080; NLD; DA. 1982; VOL. 1; NO 2; PP. 77-79; BIBL. 5 REF.Article

RADIOTRACER DETERMINATION OF THE DISTRIBUTION OF CHROMIUM IN LEC GALLIUM ARSENIDEBROZEL MR; TUCK B; RUMSBY D et al.1982; J. CRYST. GROWTH; ISSN 0022-0248; NLD; DA. 1982; VOL. 60; NO 1; PP. 113-119; BIBL. 10 REF.Article

MICRODEFECTS AND ETCH PITS IN HEAVILY SULFUR-DOPED LEC-GAP CRYSTALSUMENO M; KAWABE H; KOKONOI T et al.1981; PHILOS. MAG., A; ISSN 0141-8610; GBR; DA. 1981; VOL. 44; NO 1; PP. 91-100; BIBL. 21 REF.Article

GROWTH OF GAAS SINGLE CRYSTALS BY LIQUID ENCAPSULATED CZOCHRALSKI TECHNIQUETHYAGARAJAN R; NARULA RC; PARASHAR TR et al.1979; INDIAN J. PURE APPL. PHYS.; ISSN 0019-5596; IND; DA. 1979; VOL. 17; NO 10; PP. 650-654; BIBL. 8 REF.Article

PRECIPITATES IN FE-DOPED INP.LEE RN; NORR MK; HENRY RL et al.1977; MATER. RES. BULL.; U.S.A.; DA. 1977; VOL. 12; NO 6; PP. 651-655; BIBL. 7 REF.Article

ZUR REALSTRUKTUR VON HOCHDOTIERTEN GALLIUMARSENID-EINKRISTALLEN. = STRUCTURE REELLE DE MONOCRISTAUX D'ARSENIURE DE GALLIUM FORTEMENT DOPESSCHUMANN B.1976; KRISTALL. U. TECH.; DTSCH.; DA. 1976; VOL. 11; NO 1; PP. 41-48; ABS. ANGL.; BIBL. 22 REF.Article

DOUBLE DOPED LOW ETCH PIT DENSITY INP WITH REDUCED OPTICAL ABSORPTIONBALLMAN AA; GLASS AM; NAHORY RE et al.1983; JOURNAL OF CRYSTAL GROWTH; ISSN 0022-0248; NLD; DA. 1983; VOL. 62; NO 1; PP. 198-202; BIBL. 9 REF.Article

LOW DISLOCATION DENSITY GASB SINGLE CRYSTALS GROWN BY LEC TECHNIQUEKONDO S; MIYAZAWA S.1982; J. CRYST. GROWTH; ISSN 0022-0248; NLD; DA. 1982; VOL. 56; NO 1; PP. 39-44; BIBL. 8 REF.Article

STRIATION ETCHING OF UNDOPED, SEMI-INSULATING LEC-GROWN GAASMIYAZAWA S.1982; J. CRYST. GROWTH; ISSN 0022-0248; NLD; DA. 1982; VOL. 57; NO 2; PP. 459-461; BIBL. 6 REF.Article

ELECTRON MOBILITY AND MINORITY-CARRIER LIFETIME OF N-INP SINGLE CRYSTALS GROWN BY LIQUID-ENCAPSULATED CZOCHRALSKI METHODYAMAGUCHI M; SHINOYAMA S; UEMURA C et al.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 10; PP. 6429-6431; BIBL. 10 REF.Article

THE GROWTH OF DISLOCATION-FREE GE-DOPED INPBROWN GT; COCKAYNE B; MACEWAN WR et al.1981; J. CRYST. GROWTH; ISSN 0022-0248; NLD; DA. 1981; VOL. 51; NO 2; PP. 369-372; BIBL. 12 REF.Article

DEFECT STRUCTURE AND TETRAHEDRAL PRECIPITATES IN SULPHUR-DOPED GALLIUM PHOSPHIDEBALL RK; HUTCHINSON PW.1980; J. MATER. SCI.; ISSN 0022-2461; GBR; DA. 1980; VOL. 15; NO 9; PP. 2376-2384; BIBL. 17 REF.Article