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COMPOSITION PAR FAISCEAUX ELECTRONIQUESTROTEL J.1977; COLLOQUE INTERNATIONAL SUR LA MICROLITHOGRAPHIE, MICROELECTRONIQUE, OPTIQUE; FRA; DA. 1977; DGRST-7771946; PP. 133-141; ABS. ENG; BIBL. 21 REF.Conference Paper

NEW APPROACH TO ELECTRON BEAM LITHOGRAPHYFULTON TA; DOLAN GJ.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 8; PP. 752-754; BIBL. 9 REF.Article

PROXIMITY EFFECT CORRECTION FOR ELECTRON BEAM LITHOGRAPHY BY EQUALIZATION OF BACKGROUND DOSEOWEN G; RISSMAN P.1983; JOURNAL OF APPLIED PHYSICS; ISSN 0021-8979; USA; DA. 1983; VOL. 54; NO 6; PP. 3573-3581; BIBL. 6 REF.Article

SOME CONSIDERATIONS ON THE DESIGN OF A FIELD EMISSION GUN FOR A SHAPED SPOT LITHOGRAPHY SYSTEMORLOFF J; SWANSON LW.1982; OPTIK (STUTTGART); ISSN 0030-4026; DEU; DA. 1982; VOL. 61; NO 3; PP. 237-245; ABS. GER; BIBL. 14 REF.Article

EXPLORATION OF ELECTRON-BEAM WRITING STRATEGIES AND RESIST DEVELOPMENT EFFECTROSENFIELD MG; NEUREUTHER AR.1981; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1981; VOL. 28; NO 11; PP. 1289-1294; BIBL. 11 REF.Article

SCATTERING EXPOSURE: A SIMPLIFIED MODEL OF ELECTRON BACK-SCATTERING IN THE SUBSTRATE-POLYMER FILM STRUCTUREKISZA M; MATERNIA Z; RADZIMSKI Z et al.1981; J. PHYS. D; ISSN 0022-3727; GBR; DA. 1981; VOL. 14; NO 5; PP. 907-912; BIBL. 10 REF.Article

AUTO-REGISTRATION TECHNIQUE IN ELECTRON BEAM LITHOGRAPHYIGAKI S; NAKAYAMA N; FURUKAWA Y et al.1981; FUJITSU SCI. TECH. J.; ISSN 0016-2523; JPN; DA. 1981; VOL. 17; NO 1; PP. 101-114; BIBL. 11 REF.Article

ELECTRON BEAM LITHOGRAPHY FOR INTEGRATED CIRCUIT FABRICATIONAHMED H.1980; PHYS. TECHNOL.; ISSN 0305-4624; GBR; DA. 1980; VOL. 11; NO 5; PP. 169-174Article

UTILISATION INDUSTRIELLE D'UN COMPOSEUR A FAISCEAU ELECTRONIQUE DE RETICULES ECHELLE 10BERNARD F; TROTEL J.1977; COLLOQUE INTERNATIONAL SUR LA MICROLITHOGRAPHIE, MICROELECTRONIQUE, OPTIQUE; FRA; DA. 1977; DGRST-7771946; PP. 159-162; ABS. ENGConference Paper

RESIST POSSIBILITIES IN ION BEAM LITHOGRAPHYMACRANDER A; BARR D; WAGNER A et al.1983; OPTICAL ENGINEERING; ISSN 0091-3286; USA; DA. 1983; VOL. 22; NO 2; PP. 215-219; BIBL. 21 REF.Article

THE INFLUENCE OF ELECTRON BEAM LITHOGRAPHY ON SEMICONDUCTOR DEVICE TECHNOLOGYDANIEL PJ.1980; CONF. SER.-INST. PHYS.; ISSN 0305-2346; GBR; DA. 1980 PUBL. 1981; NO 57; PP. 169-185; BIBL. 17 REF.Conference Paper

ELECTRON-BEAM LITHOGRAPHY - A NEW APPROACH TO REGISTRATIONJONES GAC; AHMED H.1980; NEW ELECTRON.; GBR; DA. 1980; VOL. 13; NO 16; PP. 38-46; 4 P.Article

PHYSIKALISCH-TECHNISCHE PROBLEME DER ELEKTRONENSTRAHLLITHOGRAPHIE = PROBLEMES PHYSIQUES ET TECHNIQUES DE LA LITHOGRAPHIE PAR FAISCEAU D'ELECTRONSKASCHLIK K; HAHN E; KUSCHEL G et al.1980; EXP. TECH. PHYS.; ISSN 0014-4924; DDR; DA. 1980; VOL. 28; NO 5; PP. 451-475; ABS. ENG; BIBL. 21 REF.Article

ELECTRON BEAM WRITING ON A 20-A SCALE IN METAL BETA -ALUMINASMOCHEL ME; HUMPHREYS CJ; EADES JA et al.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 4; PP. 392-394; BIBL. 7 REF.Article

A MULTIPLE-ELECTRON-BEAM EXPOSURE SYSTEM FOR HIGH-THROUGHPUT, DIRECT-WRITE SUBMICROMETER LITHOGRAPHYBRODIE I; WESTERBERG ER; CONE DR et al.1981; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1981; VOL. 28; NO 11; PP. 1422-1428; BIBL. 19 REF.Article

PERFECTIONNEMENT DE L'INSTALLATION D'EXPOSITION PAR FAISCEAU ELECTRONIQUE ZBA 10HAHMANN P; SCHACKE H.1980; REV. IENA; ISSN 0373-9317; DDR; DA. 1980; VOL. 20; NO 2; PP. 65-66; BIBL. 2 REF.Article

THE ELECTRON BEAM: A BETTER WAY TO MAKE SEMICONDUCTOR MASKSGESHNER RA.1979; SOLID STATE TECHNOL.; USA; DA. 1979; VOL. 22; NO 6; PP. 69-73; BIBL. 1 REF.Article

RELIABILITY, AVAILABILITY AND SERVICEABILITY OF DIRECT WAFER EXPOSURE ELECTRON BEAM SYSTEMSMOORE RD.1977; COLLOQUE INTERNATIONAL SUR LA MICROLITHOGRAPHIE, MICROELECTRONIQUE, OPTIQUE; FRA; DA. 1977; DGRST-7771946; PP. 153-158; ABS. FRE; BIBL. 6 REF.Conference Paper

FABRICATION OF SUBMICRON PATTERN WITH AN EB LITHOGRAPHIC SYSTEM USING A FIELD EMISSION (FE) ELECTRON GUNHOSAKA S; ICHIHASHI M; HAYAKAWA H et al.1982; JPN. J. APPL. PHYS.; ISSN 0021-4922; JPN; DA. 1982; VOL. 21; NO 3; PART. 2; PP. 543-549; BIBL. 21 REF.Article

ELECTRON-BEAM FABRICATION OF SUBMICROMETER BIPOLAR TRANSISTORS FOR HIGH-FREQUENCY LOW-CURRENT OPERATIONGREENEICH EW; TOLLIVER DL; GONZALES AJ et al.1981; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1981; VOL. 28; NO 11; PP. 1346-1354; BIBL. 18 REF.Article

PROXIMITY EFFECT CORRECTION IN EB LITHOGRAPHY USING PATTERN SHAPE ADJUSTMENT TECHNIQUESSUGIYAMA N; SAITOH K.1980; TRANS. INST. ELECTRON. COMMUN. ENG. JPN., E; JPN; DA. 1980; VOL. 63; NO 3; PP. 198-205; BIBL. 3 REF.Article

ANALYSIS OF THE ROLE OF HIGH-BRIGHTNESS ELECTRON GUNS IN LITHOGRAPHYWOLFE JC.1980; IEEE TRANS. ELECTRON. DEVICES; ISSN 0018-9383; USA; DA. 1980; VOL. 27; NO 8; PP. 1475-1478; BIBL. 12 REF.Article

INSTALLATION D'EXPOSITION PAR FAISCEAU ELECTRONIQUE POUR MICROSTRUCTURES ZBA10 DU VEB CARL ZEISS JENABINDER HJ; HAHMANN P; CHRIST E et al.1978; REV. IENA; DDR; DA. 1978; VOL. 18; NO 5; PP. 212-218Article

FORMATION D'UNE TACHE ELECTRONIQUE DE FIGURE ET COURANTS LIMITES DES FAISCEAUX DANS LES SYSTEMES A BALAYAGEVOROB'EV YU V; ZHUKOV VA.1982; MIKROELEKTRONIKA; ISSN 0544-1269; SUN; DA. 1982; VOL. 11; NO 4; PP. 311-315; BIBL. 2 REF.Article

ELECTRON BEAM LITHOGRAPHY MOVING INTO FOCUSFUKATSU Y; SAKIYAMA T.1981; JEE, J. ELECTRON. ENG.; ISSN 0385-4507; JPN; DA. 1981; VOL. 18; NO 177; PP. 92-95; BIBL. 4 REF.Article

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