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ENDUITS SENSIBLES AUX RX POUR LA LITHOGRAPHIE AU-DESSOUS DU MICRONALEKSANDROV YU M; VALIEV KA; VELIKOV LV et al.1983; MIKROELEKTRONIKA; ISSN 0544-1269; SUN; DA. 1983; VOL. 12; NO 1; PP. 3-10; BIBL. 12 REF.Article

X-RAY LITHOGRAPHYWATTS RK.1979; SOLID STATE TECHNOL.; USA; DA. 1979; VOL. 22; NO 5; PP. 68-82; (5 P.); BIBL. 21 REF.Article

FABRICATION OF SILICON MOS DEVICES USING X-RAY LITHOGRAPHY.BERNACKI SE; SMITH HI.1975; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1975; VOL. 22; NO 7; PP. 421-428; BIBL. 30 REF.Article

DES MASQUES PLUS PRECIS, PLUS FIABLES.CATIER E.1975; ELECTRON. MICROELECTRON. INDUSTR.; FR.; DA. 1975; NO 202; PP. 53-58; BIBL. 10 REF.Article

ELECTRON BEAM AND X-RAY LITHOGRAPHY UPDATE.PIWCZYK BP.1978; ELECTRON. PACKAG. PRODUCT.; U.S.A.; DA. 1978; VOL. 18; NO 5; PP. 36-51 (10P.); BIBL. 18 REF.Article

ELECTRON-BEAM EXPOSURE SYSTEMS PROVIDE BETTER QUALITY MASKS FASTER.MIYAUCHI S.1978; J. ELECTRON. ENGNG; JAP.; DA. 1978; NO 135; PP. 60-62Article

MICROELECTRONICS: LITHOGRAPHIC TECHNOLOGIES PROGRESS. = MICROELECTRONIQUE: PROGRES TECHNOLOGIQUES REALISES EN LITHOGRAPHIEROBINSON AL.1975; SCIENCE; U.S.A.; DA. 1975; VOL. 189; NO 4202; PP. 540-542Article

PROSPECTS FOR X-RAY FABRICATION OF SI IC DEVICES.SMITH HI; BERNACKI SE.1975; J. VACUUM SCI. TECHNOL.; U.S.A.; DA. 1975; VOL. 12; NO 6; PP. 1321-1323; BIBL. 19 REF.; (SYMP. ELECTRON ION PHOTON BEAM TECHNOL. 13. PROC.; COLORADO SPRINGS; 1975)Conference Paper

REPLICATION OF 0.1-MU M GEOMETRIES WITH X-RAY LITHOGRAPHY.FEDER R; SPILLER E; TOPALIAN J et al.1975; J. VACUUM SCI. TECHNOL.; U.S.A.; DA. 1975; VOL. 12; NO 6; PP. 1332-1335; BIBL. 5 REF.; (SYMP. ELECTRON ION PHOTON BEAM TECHNOL. 13. PROC.; COLORADO SPRINGS; 1975)Conference Paper

REPLICATION OF 175-A LINES AND SPACES IN POLYMETHYLMETHACRYLATE USING X-RAY LITHOGRAPHYFLANDERS DC.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 36; NO 1; PP. 93-96; BIBL. 18 REF.Article

A NEW TRANSMISSION TARGET FOR THE X-RAY LITHOGRAPHY SOURCEOKADA K.1980; J. VAC. SCI. TECHNOL.; ISSN 0022-5355; USA; DA. 1980; VOL. 17; NO 5; PP. 1233-1236; BIBL. 12 REF.Article

HIGH TRANSMISSION X-RAY MASKS FOR LITHOGRAPHIC APPLICATIONS.BASSOUS E; FEDER R; SPILLER E et al.1975; IN: INT. ELECTRON DEVICES MEET.; WASHINGTON, D.C.; 1974; NEW YORK; INST. ELECTR. ELECTRON. ENG.; DA. 1975; PP. 17-19; BIBL. 3 REF.Conference Paper

SPURIOUS EFFECTS CAUSED BY THE CONTINUOUS RADIATION AND EJECTED ELECTRONS IN X-RAY LITHOGRAPHY.MALDONADO JR; COQUIN GA; MAYDAN D et al.1975; J. VACUUM SCI. TECHNOL.; U.S.A.; DA. 1975; VOL. 12; NO 6; PP. 1329-1331; BIBL. 2 REF.; (SYMP. ELECTRON ION PHOTON BEAM TECHNOL. 13. PROC.; COLORADO SPRINGS; 1975)Conference Paper

X-RAY LITHOGRAPHY. I. DESIGN CRITERIA FOR OPTIMIZING RESIST ENERGY ABSORPTION. II. PATTERN REPLICATION WITH POLYMER MASKS. = LITHOGRAPHIE AUX RAYONS X. 1ERE PARTIE: CRITERES DE REALISATION POUR OPTIMISER L'ABSORPTION DE L'ENERGIE DANS LA RESINE. 2EME PARTIE: REPRODUCTION DE MAQUETTES AVEC DES MASQUES EN POLYMERESGREENEICH JS.1975; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1975; VOL. 22; NO 7; PP. 434-439; BIBL. 19 REF.Article

HIGH-SPEED LOW-POWER X-RAY LITHOGRAPHY.LENZO PV; SPENCER EG.1974; APPL. PHYS. LETTERS; U.S.A.; DA. 1974; VOL. 24; NO 6; PP. 289-291; BIBL. 14 REF.Article

HARD RADIATION EFFECTS IN X-RAY LITHOGRAPHYZNAMIROWSKI Z; CZARCZYNSKI W.1980; ELECTRON. LETTERS; GBR; DA. 1980; VOL. 16; NO 5; PP. 178-179; BIBL. 2 REF.Article

DETERMINATION OF WAVELENGTH AND EXCITATION VOLTAGE FOR X-RAY LITHOGRAPHY.SULLIVAN PA; MCCOY JH.1976; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1976; VOL. 23; NO 4; PP. 412-418; BIBL. 25 REF.Article

HIGH ACCURACY X-RAY LITHOGRAPHY SYSTEMYAMAZAKI S; NAKAYAMA S; ISHIHARA S et al.1980; BULL. JPN. SOC. PRECIS. ENG.; ISSN 0582-4206; JPN; DA. 1980; VOL. 14; NO 3; PP. 137-142; BIBL. 8 REF.Article

X-RAY LITHOGRAPHY.SMITH HJ; FLANDERS DC.1977; JAP. J. APPL. PHYS.; JAP.; DA. 1977; VOL. 16; SUPPL. 1; PP. 61-65; BIBL. 26 REF.; (CONF. SOLID STATE DEVICES. 8. PROC.; TOKYO; 1976)Conference Paper

LITHOGRAPHIE RXNAKAYAMA S; HAYASAKA T.1977; OYO BUTURI; JAP.; DA. 1977; VOL. 46; NO 8; PP. 758-768; ABS. ANGL.; BIBL. 39 REF.Article

HIGH SPEED REPLICATION OF SUBMICRON FEATURES ON LARGE AREAS BY X-RAY LITHOGRAPHY.MAYDAN D; COQUIN GA; MALDONADO JR et al.1975; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1975; VOL. 22; NO 7; PP. 429-433; BIBL. 9 REF.Article

X-RAY LITHOGRAPHY: ON POSSIBLE SOLUTION TO VLSI DEVICE FABRICATIONMAYDAN D; COQUIN GA; MALDONADO JR et al.1977; COLLOQUE INTERNATIONAL SUR LA MICROLITHOGRAPHIE, MICROELECTRONIQUE, OPTIQUE; FRA; DA. 1977; DGRST-7771946; PP. 195-199; ABS. FRE; BIBL. 10 REF.Conference Paper

HIGH BRIGHTNESS RING CATHODE ROTATING ANODE SOURCE FOR X-RAY LITHOGRAPHYWARDLY GA; MUNRO E; SCOTT RW et al.1977; COLLOQUE INTERNATIONAL SUR LA MICROLITHOGRAPHIE, MICROELECTRONIQUE, OPTIQUE; FRA; DA. 1977; DGRST-7771946; PP. 217-220; ABS. FRE; BIBL. 9 REF.Conference Paper

SUBMICRON-RESOLUTION EUTECTIC THIN-FILM MASKCLINE HE.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 37; NO 12; PP. 1098-1100; BIBL. 7 REF.Article

GRUNDLAGEN DER MIKROELEKTRONIK. II = LES BASES DE LA MICROELECTRONIQUE. IIMOSCHWITZER A.1982; NACHRICHTENTECHNIK. ELEKTRONIK; ISSN 0323-4657; DDR; DA. 1982; VOL. 32; NO 8; PP. 329-332Article

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