THEORETICAL AND EXPERIMENTAL STUDIES OF TANDEM OR CASCADE SOLAR CELLS: A REVIEWLOFERSKI JJ.1982; PHOTOVOLTAIC SPECIALISTS CONFERENCE. 16/1982-09-27/SAN DIEGO CA; USA; NEW YORK: IEEE; DA. 1982; PP. 648-654; BIBL. 15 REF.Conference Paper

CONVERSION OF SOLAR ENERGY USING TANDEM PHOTOVOLTAIC CELLS MADE FROM MULTI-ELEMENT SEMICONDUCTORSLOFERSKI JJ.1981; PHOTOVOLTAIC AND PHOTOELECTROCHEMICAL SOLAR ENERGY CONVERSION. NORTH ATLANTIC TREATY ORGANIZATION. ADVANCED STUDY INSTITUTE/1980/GENT; USA/GBR; NEW YORK; LONDON: PLENUM PRESS; DA. 1981; PP. 157-198; BIBL. 27 REF.Conference Paper

PHOTOVOLTAICS. IV: ADVANCED MATERIALS. BOTH POLYCRYSTALLINE AND TANDEM CELLS PROMISE HIGHER EFFICIENCIES THAN SILICONLOFERSKI JJ.1980; I.E.E.E. SPECTRUM; USA; DA. 1980; VOL. 17; NO 2; PP. 37-38Article

TANDEM PHOTOVOLTAIC SOLAR CELLS AND INCREASED SOLAR ENERGY CONVERSION EFFICIENCY.LOFERSKI JJ.1976; IN: PHOTOVOLTAIC SPEC. CONF. 12; BATON ROUGE, LA.; 1976; NEW YORK; INST. ELECTR. ELECTRON. ENG.; DA. 1976; PP. 957-961; BIBL. 5 REF.Conference Paper

PROPERTIES OF THE CAPACITANCE TRANSIENT INDUCED IN GAAS MOS STRUCTURESVITALE G; LOFERSKI JJ.1979; SOLID-STATE ELECTRON.; GBR; DA. 1979; VOL. 22; NO 11; PP. 973-976; BIBL. 15 REF.Article

SINGLE CRYSTAL SOLAR CELL HETEROJUNCTIONS BY CHEMICAL VAPOR DEPOSITION OF CDSARIENZO M; LOFERSKI JJ.1979; PHOTOVOLTAIC SOLAR ENERGY CONFERENCE. 2/1979/BERLIN; NLD/USA/GBR; DORDRECHT: D. REIDEL/BOSTON: D. REIDEL/LONDON: D. REIDEL; DA. 1979; PP. 361-369; BIBL. 16 REF.;_EUR-6376Conference Paper

THEORETICAL LIMIT EFFICIENCY OF DIRECT GAP SOLAR CELLSSPITZER M; LOFERSKI JJ; SHEWCHUN J et al.1980; PHOTOVOLTAIC SPECIALISTS CONFERENCE. 1980. 14/1980/SAN DIEGO CA; USA; NEW YORK: IEEE; DA. 1980; PP. 585-590; BIBL. 13 REF.Conference Paper

SOME EFFECTS OF HEAT TREATMENT AND ELECTRON IRRADIATION ON THE CATHODOLUMINESCENCE SPECTRA OF CUINS₂.MITTLEMAN SD; LOFERSKI JJ; WOLD A et al.1977; J. APPL. PHYS.; U.S.A.; DA. 1977; VOL. 48; NO 9; PP. 3878-3882; BIBL. 20 REF.Article

RF-SPUTTERING OF LOW RESISTIVITY CDS THIN FILMSKWIETNIAK M; WARMINSKI T; BEAULIEU R et al.1982; ELECTROCHEMICAL SOCIETY. SPRING MEETING. GENERAL SESSION/1982-05-09/MONTREAL PQ; USA; PENNINGTON: ELECTROCHEMICAL SOCIETY; DA. 1982; PP. 130-131; BIBL. 2 REF.Conference Paper

NUMERICAL ANALYSIS OF JUNCTION-DEPTH EFFECT IN THE GRATING-TYPE SI SOLAR CELLHWANG HL; LIU AC; LIN JE et al.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 3; PART. 1; PP. 1548-1551; BIBL. 8 REF.Article

ION IMPLANTED GRATING TYPE SI SOLAR CELLS: JUNCTION DEPTH DEPENDENCEHWANG HL; LIU DC; TANG RS et al.1980; PHOTOVOLTAIC SPECIALISTS CONFERENCE. 1980. 14/1980/SAN DIEGO CA; USA; NEW YORK: IEEE; DA. 1980; PP. 381-385; BIBL. 9 REF.Conference Paper

CU(1=Y)AG_YINS₂-(1=X)SE_2X AS A PROTOTYPE OF THE PENTENARY CHALCOPYRITE SEMICONDUCTOR SYSTEM FOR SOLAR PHOTOVOLTAIC CELLSCHAPMAN GH; SCHEWCHUN J; GARSIDE BK et al.1979; SOL. ENERGY MATERS; NLD; DA. 1979; VOL. 1; NO 5-6; PP. 451-469; BIBL. 27 REF.Article

LATTICE CONSTANTS AND BAND-GAP VARIATIONS OF THE PENTENARY SEMICONDUCTOR SYSTEM CU_1-YAG_YINS_2(1-X)SE_2XCHAPMAN GH; SHEWCHUN J; LOFERSKI JJ et al.1979; APPL. PHYS. LETTERS; USA; DA. 1979; VOL. 34; NO 11; PP. 735-737; BIBL. 4 REF.Article

SOLAR CELLS BASED ON TUNNEL METAL-INSULATOR-SEMICONDUCTOR STRUCTURES.ST PIERRE JA; SINGH R; SHEWCHUN J et al.1976; IN: PHOTOVOLTAIC SPEC. CONF. 12; BATON ROUGE, LA.; 1976; NEW YORK; INST. ELECTR. ELECTRON. ENG.; DA. 1976; PP. 847-853; BIBL. 28 REF.Conference Paper

PHOTOVOLTAIC AND STRUCTURAL PROPERTIES OF CUINSE₂/CDS SOLAR CELLSARYA RR; WARMINSKI T; BEAULIEU R et al.1983; SOLAR ENERGY MATERIALS; ISSN 0165-1633; NLD; DA. 1983; VOL. 8; NO 4; PP. 471-481; BIBL. 9 REF.Article

GROWTH AND PROPERTIES OF CUIN NS₂ EPITAXIAL LAYERS OBTAINED BY CHEMICAL VAPOUR TRANSPORTHWANG HL; TSENG BH; SUN CY et al.1980; SOL. ENERGY MATER.; ISSN 0165-1633; NLD; DA. 1980; VOL. 4; NO 1; PP. 67-79; BIBL. 27 REF.Article

MEASUREMENT OF MINORITY-CARRIER LIFETIME IN GAAS USING THE TRANSIENT RESPONSE OF MOS CAPACITORSVITALE G; CRISMAN EE; LOFERSKI JJ et al.1979; APPL. PHYS. LETTERS; USA; DA. 1979; VOL. 34; NO 1; PP. 106-108; BIBL. 8 REF.Article

THE A_1-Y^IB_Y^IC^IIID_2X^VIE_2(1-X)^VI PENTENARY ALLOY SYSTEM AND ITS APPLICATION TO PHOTOVOLTAIC SOLAR ENERGY CONVERSIONSHEWCHUN J; LOFERSKI JJ; BEAULIEU R et al.1979; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1979; VOL. 50; NO 11 PART. 1; PP. 6978-6985; BIBL. 13 REF.Article

OPERATING CHARACTERISTICS OF THIN THERMOPHOTOVOLTAIC CELLS WITH MINORITY CARRIER MIRRORS AND OPTICAL MIRRORS USING SELECTIVE RADIATORS OF ERBIUM AND YTTERBIUM OXIDESVERA ES; LOFERSKI JJ; SPITZER M et al.1982; PHOTOVOLTAIC SOLAR ENERGY CONFERENCE. 4/1982/STRESA; NLD/USA/GBR; DORDRECHT; BOSTON; LONDON: D. REIDEL PUBLISHING COMPANY; DA. 1982; PP. 659-665; BIBL. 8 REF.Conference Paper

SPRAY PYROLYSIS OF SILVER INDIUM SULFIDESGORSKA M; BEAULIEU R; LOFERSKI JJ et al.1980; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1980; VOL. 67; NO 2; PP. 341-345; BIBL. 7 REF.Article

ULTRA HIGH EFFICIENCY THIN SILICON P-N JUNCTION SOLAR CELLS USING REFLECTING SURFACESSPITZER M; SHEWCHUN J; VERA ES et al.1980; PHOTOVOLTAIC SPECIALISTS CONFERENCE. 1980. 14/1980/SAN DIEGO CA; USA; NEW YORK: IEEE; DA. 1980; PP. 375-380; BIBL. 8 REF.Conference Paper

IONIZATION ENHANCED ANNEALING IN PHOSPHORUS IMPLANTED SILICON.SUSKI J; KRYNICKI J; RZEWUSKI H et al.1978; RAD. EFFECTS; G.B.; DA. 1978; VOL. 35; NO 1-2; PP. 13-16; BIBL. 7 REF.Article

COMPOSITIONAL AND TRACE-ELEMENTAL ANALYSIS OF CUINS₂, CUINSE₂ AND RELATED TERNARY ALLOIESHWANG HL; YANG MH; SHEN CS et al.1982; PHOTOVOLTAIC SPECIALISTS CONFERENCE. 16/1982-09-27/SAN DIEGO CA; USA; NEW YORK: IEEE; DA. 1982; PP. 867-871; BIBL. 7 REF.Conference Paper

THE APPLICATION OF PENTENARY ALLOY COMPOUNDS OF THE CU_1-YAG_YINS_2(1-X)SE_2X(A^I_1-YB_Y^IC^III D^VI_2(1-X)E^VI_2X) OR CUIN_1-YGA_YSE_2(1-X)TE_2X(A^IB^III_1-YC_Y^{I II}D^VI_2(1-X)E^VI_2X)VARIETY TO PHOTOVOLTAIC SOLAR ENERGY CONVERSIONSHEWCHUN J; LOFERSKI JJ; BURK D et al.1980; PHOTOVOLTAIC SPECIALISTS CONFERENCE. 1980. 14/1980/SAN DIEGO CA; USA; NEW YORK: IEEE; DA. 1980; PP. 650-655; BIBL. 11 REF.Conference Paper

COMPARISON OF SOME PROPERTIES OF CU₂S-CDS PHOTOVOLTAIC CELLS IN WHICH DIFFERENT METHODS ARE USED TO PREPARE THE (CU₂S) LAYER.LOFERSKI JJ; SHEWCHUN J; DEMEO EA et al.1976; IN: ELECTR. SOL. COLLOQ. INT.; TOULOUSE; 1976; TOULOUSE; CENT. NATL. ETUD. SPAT.; DA. 1976; PP. 317-324; ABS. FR.; BIBL. 5 REF.Conference Paper