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MODERNIZATION OF THE LAND REGISTRATION SYSTEMS IN ONTARIO.LOGAN RA.1977; IN: AM. SOC. PHOTOGRAMM. ANNU. MEET. 43. PROC.; WASHINGTON, D.C.; 1977; S.L.; A.S.P.; DA. 1977; VOL. 2; PP. 593-611Conference Paper

LATERAL CURRENT CONFINEMENT BY REVERSE-BIASED JUNCTIONS IN GAASALXGA1-XAS DH LASERS.TSANG WT; LOGAN RA.1977; APPL. PHYS. LETTERS; U.S.A.; DA. 1977; VOL. 30; NO 10; PP. 538-540; BIBL. 17 REF.Article

THE ORIGIN OF LARGE DARK SPOTS IN ALXGA1-XAS-GAAS HETEROSTRUCTURE PHOTOLUMINESCENCE.HENRY CH; LOGAN RA.1977; APPL. PHYS. LETTERS; U.S.A.; DA. 1977; VOL. 31; NO 3; PP. 203-205; BIBL. 4 REF.Article

GAAS DOUBLE HETEROSTRUCTURE LASERS FABRICATED BY WET CHEMICAL ETCHING.MERZ JL; LOGAN RA.1976; J. APPL. PHYS.; U.S.A.; DA. 1976; VOL. 47; NO 8; PP. 3503-3509; BIBL. 15 REF.Article

GAAS-ALGAAS DOUBLE HETEROSTRUCTURE LASERS WITH TAPER-COUPLED PASSIVE WAVEGUIDES.REINHART FK; LOGAN RA.1975; APPL. PHYS. LETTERS; U.S.A.; DA. 1975; VOL. 26; NO 9; PP. 516-518; BIBL. 12 REF.Article

GAAS-ALXGA1-XAS BURIED-HETEROSTRUCTURE LASERS GROWN BY MOLECULAR BEAM EPITAXY WITH AL0.65AL0.65GA0.35AS(GE-DOPED) LIQUID PHASE EPITAXY OVERGROWN LAYER FOR CURRENT INJECTION CONFINEMENTTSANG WT; LOGAN RA.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 36; NO 9; PP. 730-733; BIBL. 12 REF.Article

OBSERVATION OF TWO-DIMENSIONAL ELECTRONS IN LPE-GROWN GAAS-ALXGA1-XAS HETEROJONCTIONTSUI DC; LOGAN RA.1979; APPL. PHYS. LETTERS; USA; DA. 1979; VOL. 35; NO 2; PP. 99-101; BIBL. 11 REF.Article

INTEGRATED GAAS-ALX GA1-XAS INJECTION LASERS AND DETECTORS WITH ETCHED REFLECTORS.MERZ JL; LOGAN RA.1977; APPL. PHYS. LETTERS; U.S.A.; DA. 1977; VOL. 30; NO 10; PP. 530-533; BIBL. 15 REF.Article

(ALGA)AS STRIP BURIED-HETEROSTRUCTURE LASERS PREPARED BY HYBRID CRYSTAL GROWTHTSANG WT; LOGAN RA.1982; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 10; PP. 397-398; BIBL. 9 REF.Article

ELECTRO-OPTIC FREQUENCY- AND POLARIZATION-MODULATED INJECTION LASERREINHART FK; LOGAN RA.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 36; NO 12; PP. 954-957; BIBL. 13 REF.Article

LATERAL-CURRENT CONFINEMENT IN A GAAS PLANAR STRIPE-GEOMETRY AND CHANNELED SUBSTRATE BURIED DH LASER USING REVERSE-BIASED P-N JUNCTIONS.TSANG WT; LOGAN RA.1978; J. APPL. PHYS.; U.S.A.; DA. 1978; VOL. 49; NO 5; PP. 2629-2638; BIBL. 30 REF.Article

INTEGRATED ELECTRO-OPTIC INTRACAVITY FREQUENCY MODULATION OF DOUBLE-HETEROSTRUCTURE INJECTION LASER.REINHART FK; LOGAN RA.1975; APPL. PHYS. LETTERS; U.S.A.; DA. 1975; VOL. 27; NO 10; PP. 532-534; BIBL. 14 REF.Article

INTEGRATED GAAS-ALXGA1-XAS DOUBLE-HETEROSTRUCTURE LASER WITH INDEPENDENTLY CONTROLLED OPTICAL OUTPUT DIVERGENCE.LOGAN RA; REINHART FK.1975; I.E.E.E. J. QUANTUM ELECTRON.; U.S.A.; DA. 1975; VOL. 11; NO 7 PART. 2; PP. 461-464; BIBL. 12 REF.Article

MONOLITHICALLY INTEGRATED ALGAAS DOUBLE HETEROSTRUCTURE OPTICAL COMPONENTS.REINHART FK; LOGAN RA.1974; APPL. PHYS. LETTERS; U.S.A.; DA. 1974; VOL. 25; NO 10; PP. 622-624; BIBL. 13 REF.Article

DISPERSION OF THE GROUP VELOCITY REFRACTIVE INDEX IN GAAS DOUBLE HETEROSTRUCTURE LASERSVAN DER ZIEL JP; LOGAN RA.1983; IEEE JOURNAL OF QUANTUM ELECTRONICS; ISSN 0018-9197; USA; DA. 1983; VOL. 19; NO 2; PP. 164-169; BIBL. 17 REF.Article

GENERATION OF SHORT OPTICAL PULSES IN SEMICONDUCTOR LASERS BY COMBINED DC AND MICROWAVE CURRENT INJECTIONVAN DER ZIEL JP; LOGAN RA.1982; IEEE JOURNAL OF QUANTUM ELECTRONICS; ISSN 0018-9197; USA; DA. 1982; VOL. 18; NO 9; PP. 1340-1350; BIBL. 27 REF.Article

LOSS MEASUREMENT IN P-TYPE GAAS DIELECTRIC WAVEGUIDES USING RAMAN SCATTERINGSERGENT AM; MERZ JL; LOGAN RA et al.1979; J. APPL. PHYS.; USA; DA. 1979; VOL. 50; NO 4; PP. 2552-2554; BIBL. 4 REF.Article

LOSS MEASUREMENTS IN GAAS AND ALXGA1-X AS DIELECTRIC WAVEGUIDES BETWEEN 1.1 EV AND THE ENERGY GAP.MERZ JL; LOGAN RA; SERGENT AM et al.1976; J. APPL. PHYS.; U.S.A.; DA. 1976; VOL. 47; NO 4; PP. 1436-1450; BIBL. 51 REF.Article

STRIPE-GEOMETRY LASER WITH IN-SITU OHMIC CONTACT AND SELF-ALIGNED NATIVE SURFACE OXIDE MASK FOR CURRENT ISOLATION PREPARED BY MOLECULAR BEAM EPITAXYTSANG WT; LOGAN RA; DITZENBERGER JA et al.1982; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 3; PP. 123-124; BIBL. 9 REF.Article

ULTRA-LOW THRESHOLD, GRADED-INDEX WAVEGUIDE SEPARATE CONFINEMENT, CW BURIED-HETEROSTRUCTURE LASERSTSANG WT; LOGAN RA; DITZENBERGER JA et al.1982; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 19; PP. 845-846; BIBL. 8 REF.Article

SINGLE MODE OPERATION OF BURIED HETEROSTRUCTURE LASERS BY LOSS STABILIZATIONHENRY CH; LOGAN RA; MERRITT FR et al.1981; IEEE J. QUANTUM ELECTRON.; ISSN 0018-9197; USA; DA. 1981; VOL. 17; NO 11; PP. 2196-2204; BIBL. 9 REF.Article

NONRADIATIVE RECOMBINATION AT DISLOCATIONS IN III-V COMPOUND SEMICONDUCTORSPETROFF PM; LOGAN RA; SAVAGE A et al.1980; PHYS. REV. LETT.; ISSN 0031-9007; USA; DA. 1980; VOL. 44; NO 4; PP. 287-291; BIBL. 19 REF.Article

NONRADIATIVE RECOMBINATION AT DISLOCATIONS IN III-V COMPOUND SEMICONDUCTORSPETROFF PM; LOGAN RA; SAVAGE A et al.1980; J. MICR.; GBR; DA. 1980; VOL. 118; NO 3; PP. 255-261; BIBL. 20 REF.Article

EXCITON-PHONON COUPLING IN INDIRECT ALXGA1-XASDINGLE R; LOGAN RA; NELSON RJ et al.1979; SOLID STATE COMMUNIC.; GBR; DA. 1979; VOL. 29; NO 3; PP. 171-174; BIBL. 13 REF.Article

GAAS-ALXGA1-XAS INJECTION LASERS WITH DISTRIBUTOR BRAGG REFLECTORS.REIHART FK; LOGAN RA; SHANK CV et al.1975; APPL. PHYS. LETTERS; U.S.A.; DA. 1975; VOL. 27; NO 1; PP. 45-48; BIBL. 16 REF.Article

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