New exact solutions to some variable coefficients problemsLONG WEI.Applied mathematics and computation. 2010, Vol 217, Num 4, pp 1632-1638, issn 0096-3003, 7 p.Article

Vacuum states and equidistribution of the random sequence for Glimm's schemeLONG-WEI LIN.Journal of mathematical analysis and applications. 1987, Vol 124, Num 1, pp 117-126, issn 0022-247XArticle

On the vacuum state for the equations of isentropic gas dynamicsLONG-WEI LIN.Journal of mathematical analysis and applications. 1987, Vol 121, Num 2, pp 406-425, issn 0022-247XArticle

Influence of sulfidation ambience on the properties of nanocrystalline ZnS films prepared by sulfurizing the as-sputtered ZnO filmsRENGANG ZHANG; BAOYI WANG; HUI ZHANG et al.Applied surface science. 2005, Vol 245, Num 1-4, pp 340-345, issn 0169-4332, 6 p.Article

The structure and optical properties of the nanocrystalline ZnS films prepared by sulfurizing the as-deposited ZnO filmsRENGANG ZHANG; BAOYI WANG; HUI ZHANG et al.Applied surface science. 2005, Vol 241, Num 3-4, pp 435-441, issn 0169-4332, 7 p.Article

Damage to the silicon substrate by reactive ion etching detected by a slow positron beamLONG WEI; TABUKI, Y; TANIGAWA, S et al.Japanese journal of applied physics. 1993, Vol 32, Num 1A, pp 7-11, issn 0021-4922, 1Article

Effect of annealing method on vacancy-type defects in Si-implanted GaAs studied by a slow positron beamSHIKATA, S; FUJII, S; LONG WEI et al.Japanese journal of applied physics. 1992, Vol 31, Num 3, pp 732-736, issn 0021-4922, 1Article

MIXED INTERIOR AND BOUNDARY NODAL BUBBLING SOLUTIONS FOR A sinh-POISSON EQUATIONJUNCHENG WEI; LONG WEI; FENG ZHOU et al.Pacific journal of mathematics. 2011, Vol 250, Num 1, pp 225-256, issn 0030-8730, 32 p.Article

Identification of vacancy-type defects in molecular beam epitaxy-grown GaAs using a slow positron beamLONG WEI; TANIGAWA, S; UEMATSU, M et al.Japanese journal of applied physics. 1992, Vol 31, Num 7, pp 2056-2060, issn 0021-4922, 1Article

Vacancy-type defects in Be-implanted InPLONG WEI; TANIGAWA, S; UEDONO, A et al.Japanese journal of applied physics. 1994, Vol 33, Num 1A, pp 33-36, issn 0021-4922, 1Article

Impurity effects on both the creation and the migration of Ga vacancies in GaAsJONG-LAM LEE; LONG WEI; TANIGAWA, S et al.Journal of applied physics. 1991, Vol 70, Num 2, pp 674-684, issn 0021-8979Article

Be diffusion mechanism in GaAs investigated by slow positron beamJONG-LAM LEE; LONG WEI; TANIGAWA, S et al.Journal of applied physics. 1991, Vol 69, Num 9, pp 6364-6368, issn 0021-8979, 5 p.Article

Identification of lattice vacancies in the B2-phase region of Ni-Al system by positron annihilationZHANG, Lan-Zhi; WANG, Dan-Ni; WANG, Bao-Yi et al.Journal of alloys and compounds. 2008, Vol 457, Num 1-2, pp 47-50, issn 0925-8388, 4 p.Article

Positron annihilation study of defects in pyrite FeS₂ films prepared by sulfurizing thermally iron filmsDONGYUN WAN; BAOYI WANG; CHUNLAN ZHOU et al.Physica. B, Condensed matter. 2004, Vol 344, Num 1-4, pp 489-494, issn 0921-4526, 6 p.Article

Effects of the crystal structure on electrical and optical properties of pyrite FeS₂ films prepared by thermally sulfurizing iron filmsDONGYUN WAN; YUTIAN WANG; BAOYI WANG et al.Journal of crystal growth. 2003, Vol 253, Num 1-4, pp 230-238, issn 0022-0248, 9 p.Article

Oxygen microclusters in Czochralski-Grown Si probed by positron annihilationUEDONO, A; KAWANO, T; LONG WEI et al.Japanese journal of applied physics. 1994, Vol 33, Num 8B, pp L1131-L1134, issn 0021-4922, 2Article

The effects of point defects on the electrical activation of Si-implanted GaAs during rapid thermal annealingJONG-LAM LEE; LONG WEI; TANIGAWA, S et al.I.E.E.E. transactions on electron devices. 1992, Vol 39, Num 1, pp 176-183, issn 0018-9383Article

Effect of (NH₄)₂S_x treatment on the passivation of GaP surfaceJONG-LAM LEE; LONG WEI; TANIGAWA, S et al.Journal of applied physics. 1991, Vol 70, Num 5, pp 2877-2879, issn 0021-8979Article

Defect production in phosphorus ion-implanted SiO₁(43 nm)/Si studied by a variable-energy positron beamUEDONO, A; LONG WEI; DOSHO, C et al.Japanese journal of applied physics. 1991, Vol 30, Num 2, pp 201-206, issn 0021-4922, 1Article

Evidence for the passivation effect in (NH₄)₂S_x-treated GaAs observed by slow positronsJONG-LAM LEE; LONG WEI; TANIGAWA, S et al.Applied physics letters. 1991, Vol 58, Num 11, pp 1167-1169, issn 0003-6951, 3 p.Article

Amorphization processes and structural relaxation in ion implanted SiMOTOOKA, T; KOBAYASHI, F; HIROYAMA, Y et al.Japanese journal of applied physics. 1993, Vol 32, Num 1B, pp 318-321, issn 0021-4922, 1Conference Paper

Evapotranspiration (ET) and regulating mechanisms in two semiarid Artemisia-dominated shrub steppes at opposite sides of the globeWILSKE, Burkhard; KWON, Hyojung; JIQUAN CHEN et al.Journal of arid environments. 2010, Vol 74, Num 11, pp 1461-1470, issn 0140-1963, 10 p.Article

Study on pyrite FeS₂ films deposited on si(1 0 0) substrate by synchrotron radiation surface X-ray diffraction methodDONGYUN WAN; QING HE; LIPENG ZHANG et al.Journal of crystal growth. 2004, Vol 268, Num 1-2, pp 222-226, issn 0022-0248, 5 p.Article

Superconducting and microstructural properties of Fe-doped Tl-1223 cupratesYANG LI; BAGGIO-SAITOVITCH, E; WANG, Y. B et al.Physica. C. Superconductivity and its applications. 1999, Vol 315, Num 1-2, pp 129-144Article

The dynamic swelling behaviour of chitosan-based hydrogelsYAO, K.-D; JING LIU; CHENG, G.-X et al.Polymer international. 1998, Vol 45, Num 2, pp 191-194, issn 0959-8103Article