Pascal and Francis Bibliographic Databases

Help

Search results

Your search

au.\*:("LOPEZ AD")

Results 1 to 6 of 6

  • Page / 1
Export

Selection :

  • and

USING THE QUASISTATIC METHOD FOR MOS MEASUREMENTSLOPEZ AD.1973; REV. SCI. INSTRUM.; U.S.A.; DA. 1973; VOL. 44; NO 2; PP. 200-204; BIBL. 4 REF.Serial Issue

A DENSE GATE MATRIX LAYOUT METHOD FOR MOS VLSILOPEZ AD; LAW HFS.1980; IEEE J. SOLID-STATE CIRCUITS; ISSN 0018-9200; USA; DA. 1980; VOL. 15; NO 4; PP. 736-740; BIBL. 8 REF.Article

MOS SURFACE POTENTIAL AND THE GROSS NONUNIFORMITYLOPEZ AD; STRAIN RJ.1973; SOLID-STATE ELECTRON.; G.B.; DA. 1973; VOL. 16; NO 4; PP. 507-511; BIBL. 3 REF.Serial Issue

A DENSE GATE MATRIX LAYOUT METHOD FOR MOS VLSILOPEZ AD; LAW HFS.1980; IEEE TRANS. ELECTRON. DEVICES; ISSN 0018-9383; USA; DA. 1980; VOL. 27; NO 8; PP. 1671-1675; BIBL. 8 REF.Article

LES PERSPECTIVES DE LA SANTE EN ASIE MERIDIONALE ET ORIENTALE POUR L'AN 2000HANSLUWKA H; LOPEZ AD; RUZICKA LT et al.1981; WORLD HEALTH STAT. Q.; ISSN 0379-8070; CHE; DA. 1981; VOL. 34; NO 3; PP. 168-195; IDEM ENGArticle

ON THE FORMATION OF SURFACE STATES DURING STRESS AGING OF THERMAL SI-SIO2 INTERFACESGOETZBERGER A; LOPEZ AD; STRAIN RJ et al.1973; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1973; VOL. 120; NO 1; PP. 90-96; BIBL. 25 REF.Serial Issue

  • Page / 1