au.\*:("LOPEZ AD")
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A DENSE GATE MATRIX LAYOUT METHOD FOR MOS VLSILOPEZ AD; LAW HFS.1980; IEEE J. SOLID-STATE CIRCUITS; ISSN 0018-9200; USA; DA. 1980; VOL. 15; NO 4; PP. 736-740; BIBL. 8 REF.Article
MOS SURFACE POTENTIAL AND THE GROSS NONUNIFORMITYLOPEZ AD; STRAIN RJ.1973; SOLID-STATE ELECTRON.; G.B.; DA. 1973; VOL. 16; NO 4; PP. 507-511; BIBL. 3 REF.Serial Issue
ON THE FORMATION OF SURFACE STATES DURING STRESS AGING OF THERMAL SI-SIO2 INTERFACESGOETZBERGER A; LOPEZ AD; STRAIN RJ et al.1973; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1973; VOL. 120; NO 1; PP. 90-96; BIBL. 25 REF.Serial Issue