Pascal and Francis Bibliographic Databases

Help

Search results

Your search

au.\*:("LOURDUDOSS S")

Document Type [dt]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Publication Year[py]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Discipline (document) [di]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Author Country

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Results 1 to 25 of 99

  • Page / 4

Export

Selection :

  • and

DETERMINATION OF THE HEAT CAPACITY OF CALCIUM CHLORIDE OCTA- AND TETRAAMMINESLOURDUDOSS S; SCHULER T; RALDOW W et al.1981; INORG. CHIM. ACTA; ISSN 0020-1693; ITA; DA. 1981; VOL. 54; NO 1; PP. L31-L33; BIBL. 28 REF.Article

A NOVEL SORBENT MATERIAL FOR AMMONIA FOR USE IN DRY ABSORPTION MACHINESSCHULER T; LOURDUDOSS S; RALDOW W et al.1981; NEW ENERGY CONSERVATION TECHNOLOGIES AND THEIR COMMERCIALIZATION. INTERNATIONAL CONFERENCE/1981/BERLIN; DEU/USA; BERLIN; NEW YORK: SPRINGER-VERLAG; DA. 1981; PP. 878-887; BIBL. 14 REF.Conference Paper

Analysis of regrowth evolution around VCSEL type mesasRODRIGUEZ MESSMER, E; LOURDUDOSS, S.Journal of crystal growth. 2000, Vol 219, Num 3, pp 185-192, issn 0022-0248Article

CONSTRUCTION OF THE PHASE DIAGRAM FOR THE TERNARY SYSTEM KL-CUL-H2OLOURDUDOSS S; RAOUL M; BILLAUD G et al.1981; J. CHIM. PHYS. PHYSICOCHIM. BIOL.; ISSN 0021-7689; FRA; DA. 1981; VOL. 78; NO 6; PP. 571-572; ABS. FRE; BIBL. 2 REF.Article

An energy storing absorption heat pump processLOURDUDOSS, S; STYMNE, H.International journal of energy research. 1987, Vol 11, Num 2, pp 263-274, issn 0363-907XArticle

Fabrication and I-V-T behaviour of n-GaAs/semi-insulating GaInP:Fe/n-GaAs structuresLOURDUDOSS, S; HOLZ, R.Journal of crystal growth. 1997, Vol 179, Num 3-4, pp 371-381, issn 0022-0248Article

MOVPE regrowth of semi-insulating InP around reactive ion etched laser mesasNORDELL, N; BORGLIND, J; KJEBON, O et al.Electronics Letters. 1991, Vol 27, Num 11, pp 926-927, issn 0013-5194Article

High-frequency GaInAsP/InP laser mesas in <-110> direction with thick semi-insulating InP:FeLOURDUDOSS, S; KJEBON, O; WALLIN, J et al.IEEE photonics technology letters. 1993, Vol 5, Num 10, pp 1119-1122, issn 1041-1135Article

An investigation on hybride VPE growth and properties of semi-insulating InP : FeLOURDUDOSS, S; HAMMARLUNG, B; KJEBON, O et al.Journal of electronic materials. 1990, Vol 19, Num 9, pp 981-987, issn 0361-5235Article

Studies on the effect of ammonia flow rate induced defects in gallium nitride grown by MOCVDSURESH, S; LOURDUDOSS, S; LANDGREN, G et al.Journal of crystal growth. 2010, Vol 312, Num 21, pp 3151-3155, issn 0022-0248, 5 p.Article

In situ mesa etching and immediate regrowth in a HVPE reactor for buried heterostructure device fabricationRODRIGUEZ MESSMER, E; LINDSTRÖM, T; LOURDUDOSS, S et al.Journal of crystal growth. 2000, Vol 210, Num 4, pp 600-612, issn 0022-0248Article

Kinetic study of InP:Fe growth by LP-HVPE with ferrocene as Fe sourceJAHAN, D; SÖDERSTRÖM, D; LOURDUDOSS, S et al.Journal of the Electrochemical Society. 2000, Vol 147, Num 2, pp 744-746, issn 0013-4651Article

Compositional analysis on quaternary GaxIn1-xAsyP1-y vapour phase epitaxy : a comparison between theory and experimentGOPALAKRISHNAN, N; DHANASEKARAN, R; LOURDUDOSS, S et al.Materials chemistry and physics. 1997, Vol 50, Num 1, pp 70-75, issn 0254-0584Article

Iron doped GaInP for selective regrowth around GaAs mesasLOURDUDOSS, S; HOLZ, R; KJEBON, O et al.Journal of crystal growth. 1995, Vol 154, Num 3-4, pp 410-414, issn 0022-0248Article

Growth of Zn3As2 on GaAs by liquid phase epitaxy and their characterizationNAGARAJAN, M; SUDHAKAR, S; LOURDUDOSS, S et al.Journal of crystal growth. 2011, Vol 314, Num 1, pp 119-122, issn 0022-0248, 4 p.Article

Proceedings of the Third International Conference on Materials for Advanced Technologies (ICMAT 2005) Symposium J: III-V Semiconductors for Microelectronic and Optoelectronic Applications, Singapore, July 3-8, 2005RADHAKRISHNAN, K; LOURDUDOSS, S; NG GEOK ING et al.Thin solid films. 2007, Vol 515, Num 10, issn 0040-6090, 219 p.Conference Proceedings

Orientation dependent growth behaviour during hydride VPE regrowth of InP : Fe around reactive ion etched mesasHAMMARLUND, B; LOURDUDOSS, S; KJEBON, O et al.Journal of electronic materials. 1991, Vol 20, Num 7, pp 523-528, issn 0361-5235Article

Nanometer transistors for emission and detection of THz radiationLUSAKOWSKI, J.Thin solid films. 2007, Vol 515, Num 10, pp 4327-4332, issn 0040-6090, 6 p.Conference Paper

Recent achievements in the reliability of InP-based HEMTsSUEMITSU, Tetsuya.Thin solid films. 2007, Vol 515, Num 10, pp 4378-4383, issn 0040-6090, 6 p.Conference Paper

Electron and Hole Capture Cross-Sections of Fe Acceptors in GaN:Fe Epitaxially Grown on SapphireAGGERSTAM, T; PINOS, A; MARCINKEVICIUS, S et al.Journal of electronic materials. 2007, Vol 36, Num 12, pp 1621-1624, issn 0361-5235, 4 p.Article

Time-resolved micro-photoluminescence studies of deep level distribution in selectively regrown GaInP:Fe and GaAs:FeGAARDER, A; MARCINKEVICIUS, S; BARRIOS, C. Angulo et al.Semiconductor science and technology. 2002, Vol 17, Num 2, pp 129-134, issn 0268-1242Article

Dopant distribution in selectively regrown InP: Fe studied by time-resolved photoluminescenceGAARDER, A; MARCINKEVICIUS, S; MESSMER, E. Rodriguez et al.Journal of crystal growth. 2001, Vol 226, Num 4, pp 451-457, issn 0022-0248Article

Optimisation of interaction parameters for GaxIn1-xAsyP1-y solid solutions using gas-solid equilibrium data and a sublattice modelLOURDUDOSS, S; DU, S; KJEBON, O et al.Calphad. 1994, Vol 18, Num 4, pp 397-407, issn 0364-5916Conference Paper

Rapid epitaxial growth of conducting and insulating III-V compounds on (001), (110), (111)A, (311)A, and (311)B surfaces by hydride vapor phase epitaxyLOURDUDOSS, S; GOPALAKRISHNAN, N; HOLZ, R et al.Metallurgical and materials transactions. A, Physical metallurgy and materials science. 1999, Vol 30, Num 4, pp 1047-1051, issn 1073-5623Article

Temporally resolved regrowth of InPLOURDUDOSS, S; RODRIGUEZ MESSMER, E; KJEBON, O et al.Journal of crystal growth. 1995, Vol 152, Num 3, pp 105-114, issn 0022-0248Article

  • Page / 4