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Growth and characterization of a-plane AlxGa1-xN alloys by metalorganic chemical vapor depositionHUANG, H. M; LING, S. C; CHEN, J. R et al.Journal of crystal growth. 2010, Vol 312, Num 6, pp 869-873, issn 0022-0248, 5 p.Article

AlGaN/GaN MULTIPLE QUANTUM WELLS GROWN BY ATOMIC LAYER DEPOSITIONLO, M. H; LI, Z. Y; CHEN, J. R et al.Proceedings of SPIE, the International Society for Optical Engineering. 2008, pp 68941V.1-68941V.9, issn 0277-786X, isbn 978-0-8194-7069-0, 1VolConference Paper

Characteristics of a-plane GaN with the SiNx insertion layer grown by metal-organic chemical vapor depositionKO, T. S; WANG, T. C; HUANG, H. M et al.Journal of crystal growth. 2008, Vol 310, Num 23, pp 4972-4975, issn 0022-0248, 4 p.Conference Paper

Performance and reliability improvement of flash device by a novel programming methodHO, Chia-Huai; CHANG-LIAO, Kuei-Shu; HUANG, Ya-Nan et al.Microelectronics and reliability. 2007, Vol 47, Num 6, pp 967-971, issn 0026-2714, 5 p.Article

A novel fully CMOS process compatible PREM for SOC applicationsYEH, C. C; TAHUI WANG; LU, Chih-Yuan et al.IEEE electron device letters. 2005, Vol 26, Num 3, pp 203-204, issn 0741-3106, 2 p.Article

A new test structure and characterization methodology to identify array leakage path in mask ROMFAN, T. H; CHAN, K. Y; LU, T. C et al.2002 international conference on microelectronic test structures. 2002, pp 45-48, isbn 0-7803-7464-9, 4 p.Conference Paper

New spider-webs test structure and characterization methodology for flash memory tunnel oxide qualityFAN, T. H; LU, T. C; PAN, Sam et al.2002 international conference on microelectronic test structures. 2002, pp 133-137, isbn 0-7803-7464-9, 5 p.Conference Paper

An analytical bandgap-narrowing-related current-gain model including concentration dependent diffusion coefficients for VLSI BJT devicesLU, T. C; KUO, J. B.Solid-state electronics. 1992, Vol 35, Num 9, pp 1371-1373, issn 0038-1101Article

Efficiency and Droop Improvement in GaN-Based High-voltage Light-Emitting DiodesWANG, C. H; LIN, D. W; CHI, G. C et al.IEEE electron device letters. 2011, Vol 32, Num 8, pp 1098-1100, issn 0741-3106, 3 p.Article

Small GaN-based light-emitting diodes with a single electrode pad fabricated on a sapphire substrateLEE, Y. C; LEE, C. E; LU, T. C et al.Semiconductor science and technology. 2008, Vol 23, Num 4, issn 0268-1242, 045013.1-045013.5Article

GaN/AlGaN active regions for terahertz quantum cascade lasers grown by low-pressure metal organic vapor depositionHUANG, G. S; LU, T. C; YAO, H. H et al.Journal of crystal growth. 2007, Vol 298, pp 687-690, issn 0022-0248, 4 p.Conference Paper

Recent Progress on GaN-based Vertical Cavity Surface Emitting LasersLU, T. C; KAO, C. C; HUANG, G. S et al.Proceedings of SPIE, the International Society for Optical Engineering. 2007, pp 67660G.1-67660G.12, issn 0277-786X, isbn 978-0-8194-6926-7Conference Paper

High brightness AlGaInP-based light emitting diodes by adopting the stripe-patterned omni-directional reflectorLEE, Y. J; LU, T. C; KUO, H. C et al.Semiconductor science and technology. 2006, Vol 21, Num 2, pp 184-189, issn 0268-1242, 6 p.Article

PHINES: A novel low power program/erase, small pitch, 2-bit per cell flash memoryYEH, C. C; TSAI, W. J; LIU, M. I et al.IEDm : international electron devices meeting. 2002, pp 931-934, isbn 0-7803-7462-2, 4 p.Conference Paper

2D device-level simulation study on D.C. and transient behavior of a SiGe-base HBT with a graded germanium profile in an ECL buffer operating at 77 KKUO, J. B; LU, T. C.Solid-state electronics. 1995, Vol 38, Num 2, pp 451-455, issn 0038-1101Article

An analytical SiGe-base HBT model and its effects on a BiCMOS inverter circuitLU, T. C; KUO, J. B.I.E.E.E. transactions on electron devices. 1994, Vol 41, Num 2, pp 272-276, issn 0018-9383Article

A closed-form analytical BJT forward transit time model considering bandgap-narrowing effects and concentrations-dependent diffusion coefficientsLU, T. C; KUO, J. B.Solid-state electronics. 1992, Vol 35, Num 9, pp 1374-1377, issn 0038-1101Article

Enhancement of sintering ability of magnesium aluminate spinel (MgAl2O4) ceramic nanopowders by shock compressionCHEN, Q. Y; MENG, C. M; LU, T. C et al.Powder technology. 2010, Vol 200, Num 1-2, pp 91-95, issn 0032-5910, 5 p.Article

Blue GaN-based vertical cavity surface emitting lasers by CW current injection at 77KKUO, H. C; CHEN, S. W; KAO, T. T et al.Proceedings of SPIE, the International Society for Optical Engineering. 2009, Vol 7216, issn 0277-786X, isbn 978-0-8194-7462-9 0-8194-7462-2, 1Vol, 72161A.1-72161A.11Conference Paper

Terahertz band-gap in InAs/GaSb type-II superlatticesLI, L. L; XU, W; ZENG, Z et al.Microelectronics journal. 2009, Vol 40, Num 4-5, pp 812-814, issn 0959-8324, 3 p.Conference Paper

Improvement of light output in GaN-based power chip light-emitting diodes with a nano-rough surface by nanoimprint lithographyHUANG, H. W; LIN, C. H; YU, C. C et al.Semiconductor science and technology. 2008, Vol 23, Num 4, issn 0268-1242, 045022.1-045022.4Article

Epitaxial Lateral Overgrowth of GaN-based Light Emitting Diodes on SiO2 Nanorod-Array Patterned Sapphire Substrates by MOCVDCHIU, C. H; CHAO, C. L; LO, M. H et al.Proceedings of SPIE, the International Society for Optical Engineering. 2008, Vol 7135, issn 0277-786X, isbn 978-0-8194-7375-2 0-8194-7375-8, 71351Z.1-71351.7, 2Conference Paper

Relationship between AC stress and DC stress on tunnel oxidesZOUS, N. K; CHEN, Y. J; LU, Chih-Yuan et al.International Symposium on the Physical & Failure Analysis of Integrated Circuits. 2004, pp 119-121, isbn 0-7803-8454-7, 1Vol, 3 p.Conference Paper

Mocvd growth of InP/InGaAlAs distributed bragg reflectorsTSAI, J. Y; LU, T. C; C.WANG, S et al.Proceedings - Electrochemical Society. 2003, pp 115-122, issn 0161-6374, isbn 1-56677-349-0, 8 p.Conference Paper

D.C. and transient analysis of a SiGe-base heterojunction bipolar device in an ECL buffer using a modified pisces programKUO, J. B; CHEN, H. P; CHEN, B. Y et al.Solid-state electronics. 1993, Vol 36, Num 9, pp 1273-1276, issn 0038-1101Article

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