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INTERFACE STATES IN GAAS/ALXGA1-XAS HETEROSTRUCTURES GROWN BY ORGANOMETALLIC VAPOR PHASE EPITAXYMATSUMOTO T; BHATTACHARYA PK; LUDOWISE MJ et al.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 1; PP. 52-54; BIBL. 11 REF.Article

GA080 IN020AS 1.20-EV HIGH QUANTUM EFFICIENCY JUNCTION FOR MULTIJUNCTION SOLAR CELLSDIETZE WT; LUDOWISE MJ; GREGORY PE et al.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 41; NO 10; PP. 984-986; BIBL. 10 REF.Article

MELT REMOVAL AND PLANAR GROWTH OF IN1-XGAXP1-ZASZ HETEROJUNCTIONS.COLEMAN JJ; HOLONYAK N JR; LUDOWISE MJ et al.1976; APPL. PHYS. LETTERS; U.S.A.; DA. 1976; VOL. 28; NO 7; PP. 363-365; BIBL. 15 REF.Article

THE GROWTH OF MAGNESIUM-DOPED GAAS BY THE OM-VPE PROCESSLEWIS CR; DIETZE WT; LUDOWISE MJ et al.1983; JOURNAL OF ELECTRONIC MATERIALS; ISSN 0361-5235; USA; DA. 1983; VOL. 12; NO 3; PP. 507-524; BIBL. 22 REF.Article

O.M. V.P.E. GROWTH OF ALGASB AND ALGAASSBCOOPER CB; SAXENA RR; LUDOWISE MJ et al.1980; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1980; VOL. 16; NO 23; PP. 892-893; BIBL. 10 REF.Article

OM-VPE GROWTH OF MG-DOPED GAASLEWIS CR; DIETZE WT; LUDOWISE MJ et al.1982; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 3; PP. 569-570; BIBL. 5 REF.Article

ULTRATHIN GAAS AND ALGAAS SOLAR CELLSBOETTCHER RJ; BORDEN PG; LUDOWISE MJ et al.1982; PHOTOVOLTAIC SPECIALISTS CONFERENCE. 16/1982-09-27/SAN DIEGO CA; USA; NEW YORK: IEEE; DA. 1982; PP. 1470-1473; BIBL. 8 REF.Conference Paper

BEHAVIOR OF THE 0,82 EV AND OTHER DOMINANT ELECTRON TRAPS IN ORGANOMETALLIC VAPOR PHASE EPITAXIAL ALXGA1-XASMATSUMOTO T; BHATTACHARYA PK; LUDOWISE MJ et al.1982; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1982; VOL. 41; NO 7; PP. 662-664; BIBL. 18 REF.Article

IMPROVED MOBILITY IN OM-VPE-GROWN GA1-XINXASDIETZE WT; LUDOWISE MJ; COOPER CB et al.1981; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1981; VOL. 17; NO 19; PP. 698-699; BIBL. 11 REF.Article

THE ORGANOMETALLIC VPE GROWTH OF GAAS1-Y SBY USING TRIMETHYLANTIMONY AND GA1-XINXAS USING TRIMETHYLARSENICCOOPER CB III; LUDOWISE MJ; AEBI V et al.1980; J. ELECTRON. MATER.; ISSN 0361-5235; USA; DA. 1980; VOL. 9; NO 2; PP. 299-309; BIBL. 37 REF.Article

HIGH-EFFICIENCY ORGANOMETALLIC VAPOR PHASE EPITAXY ALGAAS/GAAS MONOLITHIC CASCADE SOLAR CELL USING METAL INTERCONNECTSLUDOWISE MJ; LARUE RA; BORDEN PG et al.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 41; NO 6; PP. 550-552; BIBL. 11 REF.Article

TRANSFER DOPING EFFECTS AT THE ORGANOMETALLIC VAPOR PHASE EPITAXIAL ALXGA1-XAS-SUBSTRATE GAAS INTERFACEMATSUMOTO T; BHATTACHARYA PK; DARMAWAN J et al.1982; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1982; VOL. 41; NO 11; PP. 1075-1077; BIBL. 17 REF.Article

VARIATION OF EFFECTIVE INDEX OF REFRACTION IN A DOUBLE-HETEROJUNCTION LASER (IN1-XGAXP1-ZASZ).WRIGHT PD; REZEK EA; LUDOWISE MJ et al.1977; J. APPL. PHYS.; U.S.A.; DA. 1977; VOL. 48; NO 5; PP. 2091-2092; BIBL. 10 REF.Article

LIQUID PHASE EPITAXIAL GROWTH OF INAS1-XSBX ON GASBGERTNER ER; ANDREWS AM; BUBULAC LO et al.1979; J. ELECTRON. MATER.; USA; DA. 1979; VOL. 8; NO 4; PP. 545-554; BIBL. 13 REF.Article

HETERJUNCTION LASER OPERATION OF GAAS1-XPX:N ON NN-PAIR (ENN) AND A-LINE (EN) TRANSITIONS NEAR THE DIRECT (R) BAND EDGE.COLERMAN JJ; HOLONYAK N JR; LUDOWISE MJ et al.1975; J. APPL. PHYS.; U.S.A.; DA. 1975; VOL. 46; NO 11; PP. 4835-4841; BIBL. 20 REF.Article

DEFECT- AND PHONON-ASSISTED TUNNELING IN LPE IN1-XGAXP1-ZASZ DH LASER DIODES (LAMBDA EQUIV. A 1 MU M).LUDOWISE MJ; HOLONYAK N JR; WRIGHT PD et al.1977; J. APPL. PHYS.; U.S.A.; DA. 1977; VOL. 48; NO 10; PP. 4287-4291; BIBL. 27 REF.Article

PULSED ROOM-TEMPERATURE OPERATION OF IN1-XGAXP1-ZASZ DOUBLE HETEROJUNCTION LASERS AT HIGH ENERGY (G 470 A, 1.916 EV).COLEMAN JJ; HOLONYAK N JR; LUDOWISE MJ et al.1976; APPL. PHYS. LETTERS; U.S.A.; DA. 1976; VOL. 29; NO 3; PP. 167-169; BIBL. 17 REF.Article

HETEROJUNCTION LASER OPERATION OF N-FREE AND N-DOPED GAAS1-YPY (Y=0.42-0.43 LAMBDA EQUIV. A 6200 A, 77OK) NEAR THE DIRECT INDIRECT TRANSITION (Y EQUIV. A YC EQUIV. A 0.46).COLEMAN JJ; HOLONYAK N JR; LUDOWISE MJ et al.1975; J. APPL. PHYS.; U.S.A.; DA. 1975; VOL. 46; NO 8; PP. 3556-3561; BIBL. 25 REF.Article

STIMULATED EMISSION IN STRAINED GAAS1-XPX-GAAS1-YPY SUPERLATTICESLUDOWISE MJ; DIETZE WT; LEWIS CR et al.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 3; PP. 257-259; BIBL. 11 REF.Article

IN1-XGAXP1-XASZ DOUBLE-HETEROJUNCTION-LASER OPERATION (77OK, YELLOW) IN AN EXTERNAL GRATING CAVITY.WRIGHT PD; COLEMAN JJ; HOLONYAK N JR et al.1976; J. APPL. PHYS.; U.S.A.; DA. 1976; VOL. 47; NO 8; PP. 3580-3586; BIBL. 14 REF.Article

HIGH-EFFICIENCY ALGAAS/GAAS CONCENTRATOR SOLAR CELLS BY ORGANOMETALLIC VAPOR PHASE EPITAXYSAXENA RR; AEBI V; COOPER CB III et al.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 8; PP. 4501-4503; BIBL. 8 REF.Article

ABSORPTION MEASUREMENTS AT HIGH PRESSURE (0-10 KBAR) ON STRAINED SUPERLATTICESGAVRILOVIC P; MEEHAN K; HOLONYAK N JR et al.1983; SOLID STATE COMMUNICATIONS; ISSN 0038-1098; USA; DA. 1983; VOL. 45; NO 9; PP. 803-806; BIBL. 12 REF.Article

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