au.\*:("LUE JT")
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THE FABRICATION OF SCHOTTKY-BARRIER SOLAR CELLS BY ELECTROLESS NICKEL PLATINGLUE JT.1979; APPL. PHYS. LETTERS; USA; DA. 1979; VOL. 34; NO 10; PP. 688-690; BIBL. 15 REF.Article
SPIN-LATTICE RELAXATION TIME OF CONDUCTION ELECTRONS IN ALKALI METALS: SODIUM.LUE JT.1974; NUOVO CIMENTO, B; ITAL.; DA. 1974; VOL. 22; NO 1; PP. 1-12; ABS. ITAL. RUSSE; BIBL. 22 REF.Article
THE WAVELENGTH MODULATION SPECTRUM OF ION-IMPLANTED SILICONLUE JT; SHAW SY.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 8; PP. 5617-5620; BIBL. 16 REF.Article
THE INFLUENCE OF HYDROGEN GAS ON THE CHARACTERISTICS OF AMORPHOUS SILICON DEPOSITED BY RF SPUTTERINGLUE JT; MEYER O; LOMBAARD J et al.1982; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1982; VOL. 25; NO 10; PP. 1011-1016; BIBL. 13 REF.Article
PRECISE TEMPERATURE CONTROL FOR GROWTH OF SILICON CRYSTALS.LEE SP; LUE JT; YANG YT et al.1976; REV. SCI. INSTRUM.; U.S.A.; DA. 1976; VOL. 47; NO 1; PP. 72-73; BIBL. 4 REF.Article