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A review of riverine fluxes of hexachlorocyclohexane and DDT to the Azov and Black seas from the former USSR and Russian FederationZHULIDOV, Alexander V; ROBARTS, Richard D; KORNEEV, V. V et al.Journal of environmental science and health. Part A, Toxic/hazardous substances & environmental engineering. 2003, Vol 38, Num 5, pp 753-769, 17 p.Article

Nature of high-temperature charge instability in fully depleted SOI MOSFETsNAZAROV, A. N; LYSENKO, V. S; COLINGE, J.-P et al.Proceedings - Electrochemical Society. 2003, pp 455-460, issn 0161-6374, isbn 1-56677-375-X, 6 p.Conference Paper

Current stochasticity of field emission of charge from traps in the transition layer of implanted MIS structuresGOMENIUK, YU. V; LITOVSKI, R. N; LYSENKO, V. S et al.Applied surface science. 1992, Vol 59, Num 2, pp 91-94, issn 0169-4332Article

Manifestation of hydrogen in Al-SiO₂-Si structures subjected to a RF plasma annealingLYSENKO, V. S; NAZAROV, A. N; NAUMOVETS, G. A et al.Physica status solidi. A. Applied research. 1989, Vol 112, Num 1, pp K9-K12, issn 0031-8965Article

RF plasma annealing of implanted MIS structuresLYSENKO, V. S; LOKSHIN, M. M; NAZAROV, A. N et al.Physica status solidi. A. Applied research. 1985, Vol 88, Num 2, pp 705-712, issn 0031-8965Article

Relaxation spin-réseau dans le silicium amorpheBUGAJ, A. A; ZARITSKIJ, I. M; KONCHITS, A. A et al.Fizika tverdogo tela. 1984, Vol 26, Num 7, pp 1939-1942, issn 0367-3294Article

Transport and interface states in high-κ LaSiO_x dielectricGOMENIUK, Y. Y; GOMENIUK, Y. V; TYAGULSKII, I. P et al.Microelectronic engineering. 2011, Vol 88, Num 7, pp 1342-1345, issn 0167-9317, 4 p.Conference Paper

Charge trapping in high-dose Ge-implanted and Si-implanted silicon-dioxide thin filmsNAZAROV, A. N; OSIYUK, I. N; TYAGULSKII, I. P et al.Proceedings - Electrochemical Society. 2003, pp 144-149, issn 0161-6374, isbn 1-56677-347-4, 6 p.Conference Paper

Thermally activated dissipation and upper critical magnetic field under the strong electrostatic field in the BiPbSrCaCuO thin filmLYSENKO, V. S; GOMENIUK, Y. V; TYAGULSKI, I. P et al.Journal de physique. IV. 1996, Vol 6, Num 3, pp C3.271-C3.276, issn 1155-4339Conference Paper

Flash lamp annealing and RF plasma annealing of Al-SiO₂-Si structuresNAZAROV, A. N; LYSENKO, V. S; VALIEV, S. A et al.Physica status solidi. A. Applied research. 1990, Vol 120, Num 2, pp 447-456, issn 0031-8965Article

Processus de stimulation thermique des structures MDP implantées à couches semi-conductrices sous-jacentes fortement endommagéesVALIEV, S. A; LYSENKO, V. S; NAZAROV, A. N et al.Geliotehnika (Taškent). 1988, Num 1, pp 9-13, issn 0130-0997Article

Simple method for the determination of the doping profile in MIS structures with implanted shallow p-n junctionLYSENKO, V. S; NAZAROV, A. N; RUDENKO, T. E et al.Physica status solidi. A. Applied research. 1985, Vol 91, Num 2, pp K173-K178, issn 0031-8965Article

Double injection current and field effect in SOS diodesLYSENKO, V. S; LITOVSKII, R. N; LOKSHIN, M. M et al.Physica status solidi. A. Applied research. 1983, Vol 77, Num 2, pp 443-448, issn 0031-8965Article

Relaxation de longue durée du courant lors de la variation de charge par effet tunnel de niveaux profonds du semiconducteur de structures à barrières de surfaceLITOVSKIJ, R. N; LYSENKO, V. S; RUDENKO, T. E et al.Fizika i tehnika poluprovodnikov. 1988, Vol 22, Num 5, pp 875-880, issn 0015-3222Article

Light-emitting properties of amorphous Si:C:O:H layers fabricated by oxidation of carbon-rich a-Si:C:H filmsVASIN, A. V; ISHIKAWA, Y; KOLESNIK, S. P et al.Solid state sciences. 2009, Vol 11, Num 10, pp 1833-1837, issn 1293-2558, 5 p.Conference Paper

Charge trapping and interface states in hydrogen annealed HfO₂-Si structuresGOMENIUK, Y. V; NAZAROV, A. N; VOVK, Ya. N et al.Microelectronics and reliability. 2007, Vol 47, Num 4-5, pp 714-717, issn 0026-2714, 4 p.Conference Paper

High-temperature behavior of fully-depleted soi mosfets in case of charge instability of buried oxideNAZAROV, A. N; HOUK, Y; VOVK, Ya. N et al.Proceedings - Electrochemical Society. 2005, pp 113-118, issn 0161-6374, isbn 1-56677-461-6, 6 p.Conference Paper

Association of high-temperature kink-effect in SIMOX SOI fully depleted n-MOSFET with bias temperature instability of buried oxideNAZAROV, A. N; BARCHUK, I. P; LYSENKO, V. S et al.Microelectronic engineering. 1999, Vol 48, Num 1-4, pp 379-382, issn 0167-9317Conference Paper

Biogeography and limnology of the Lake Taymyr-wetland system, Russian Arctic : An ecological synthesisROBARTS, R. D; ZHULIDOV, A. V; ZHULIDOVA, O. V et al.Archiv für Hydrobiologie. Supplementband. Monographische Beiträge. 1999, Vol 121, Num 2, pp 159-200, issn 0341-2881Article

Thermally stimulated characterization of shallow traps in the SiC/Si heterojunctionLYSENKO, V. S; TYAGULSKI, I. P; GOMENIUK, Y. V et al.Journal of physics. D, Applied physics (Print). 1998, Vol 31, Num 13, pp 1499-1503, issn 0022-3727Article

Critical currents in oxygen-implanted YBa₂Cu₃O_7-δ thin films under magnetic and electrostatic fieldsGOMENIUK, YU. V; LOZOVSKI, V. Z; LYSENKO, V. S et al.Physica. C. Superconductivity. 1993, Vol 214, Num 1-2, pp 127-132, issn 0921-4534Article

Effect of strong electrostatic fields on the properties of Y_1-xPr_xBa₂Cu₃O_7-δ ceramicsGOMENIUK, Y. V; LOZOVSKI, V. Z; LYSENKO, V. S et al.Physica status solidi. A. Applied research. 1992, Vol 132, Num 1, pp 155-161, issn 0031-8965Article

Relaxation of amorphous structure of implanted Si under RF plasma treatment: Raman and EPR studyARTAMONOV, V. V; LYSENKO, V. S; NASAROV, A. N et al.Semiconductor science and technology. 1991, Vol 6, Num 1, pp 1-4, issn 0268-1242Article

RPE dans le silicium amorphisé par implantation ioniqueBUGAJ, A. A; ZARITSKIJ, I. M; KONCHITS, A. A et al.Fizika i tehnika poluprovodnikov. 1985, Vol 19, Num 2, pp 257-262, issn 0015-3222Article