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DETERMINATION OF THE BULK CONDUCTIVITY OF CONDUCTIVE BASE PAPERSJOSEFOWICZ JY; LANDHEER D.1981; TAPPI, TECH. ASSOC. PULP PAP. IND.; ISSN 0039-8241; USA; DA. 1981; VOL. 64; NO 2; PP. 116-118; BIBL. 5 REF.Article

INTERPRETATION OF SURFACE ELECTRICAL MEASUREMENTS ON CONDUCTIVE BASE PAPERS: A DISTRIBUTED RESISTANCE MODELHOWLETT W; LANDHEER D.1980; TAPPI, TECH. ASSOC. PULP PAP. IND.; ISSN 0039-8241; USA; DA. 1980; VOL. 63; NO 10; PP. 95-97Article

DETERMINATION OF THE HYDRODYNAMIC RADII OF POLY(P-ISOPROPYL ALPHA -METHYLSTYRENE) BY PHOTON CORRELATION SPECTROSCOPYLANDHEER D; SHADI LAL MALHOTRA.1981; J. MACROMOL. SCI., CHEM.; ISSN 0022-233X; USA; DA. 1981; VOL. 16; NO 7; PP. 1349-1357; BIBL. 10 REF.Article

FUNDAMENTAL ASPECTS AND TECHNOLOGICAL IMPLICATIONS OF THE SOLUBILITY CONCEPT FOR THE PREDICTION OF RUNNING PROPERTIESLANDHEER D; DACKUS AJG; KLOSTERMANN JA et al.1980; WEAR; CHE; DA. 1980-08-01; VOL. 62; NO 2; PP. 255-286; BIBL. 20 REF.Conference Paper

ELASTIC CONSTANTS OF KRYPTON SINGLE CRYSTALS DETERMINED BY BRILLOUIN SCATTERING.LANDHEER D; JACKSON HE; MCLAREN RA et al.1976; PHYS. REV., B; U.S.A.; DA. 1976; VOL. 13; NO 2; PP. 888-895; BIBL. 32 REF.Article

Role of carrier equilibrium in self-consistent calculations for double barrier resonant diodesLANDHEER, D; AERS, G. C.Superlattices and microstructures. 1990, Vol 7, Num 1, pp 17-21, issn 0749-6036Article

Switching times of double-barrier diodesLIU, H. C; LANDHEER, D.Superlattices and microstructures. 1988, Vol 4, Num 6, pp 701-704, issn 0749-6036Article

ELASTIC CONSTANTS OF NEON SINGLE CRYSTALS DETERMINED BY BRILLOUIN SCATTERING.MCLAREN RA; KIEFTE H; LANDHEER D et al.1975; PHYS. REV., B; U.S.A.; DA. 1975; VOL. 11; NO 4; PP. 1705-1717; BIBL. 52 REF.Article

Extremely low resistivity erbium ohmic contacts to n-type siliconJANEGA, P. L; MCCAFFREY, J; LANDHEER, D et al.Applied physics letters. 1989, Vol 55, Num 14, pp 1415-1417, issn 0003-6951, 3 p.Article

Secondary ion mass spectrometry and Auger study of lithium niobate processing for integrated opticsLANDHEER, D; MITCHELL, D. F; SPROULE, G. I et al.Journal of vacuum science and technology. A. Vacuum, surfaces, and films. 1986, Vol 4, Num 4, pp 1897-1900, issn 0734-2101Article

Effective mass in the barriers of GaAs/AlAs resonant tunneling double barrier diodesLANDHEER, D; AERS, G. C; WASILEWSKI, Z. R et al.Superlattices and microstructures. 1992, Vol 11, Num 1, pp 55-59, issn 0749-6036Article

Modeling of titanium diffusion into LiNbO3 using a depth-dependent diffusion coefficientFONTAINE, M; DELAGE, A; LANDHEER, D et al.Journal of applied physics. 1986, Vol 60, Num 7, pp 2343-2350, issn 0021-8979Article

Improved performance with low temperature silicon nitride spacer processREDDY, Chandra M; ANDERSON, Steven G. H.Proceedings - Electrochemical Society. 2003, pp 241-248, issn 0161-6374, isbn 1-56677-347-4, 8 p.Conference Paper

A review of defect generation in the SiO2 and at its interface with SIZHANG, J. F.Proceedings - Electrochemical Society. 2003, pp 262-290, issn 0161-6374, isbn 1-56677-347-4, 29 p.Conference Paper

Atomistic characterization of radical nitridation process on Si(100) surfacesYASUDA, Yukio; SAKAI, Akira; ZAIMA, Shigeaki et al.Proceedings - Electrochemical Society. 2003, pp 495-506, issn 0161-6374, isbn 1-56677-347-4, 12 p.Conference Paper

A neutron reflectivity study of silicon oxide thin filmsBERTAGNA, Valérie; MENELLE, Alain; PETITDIDIER, Sébastien et al.Proceedings - Electrochemical Society. 2003, pp 525-532, issn 0161-6374, isbn 1-56677-347-4, 8 p.Conference Paper

Modeling and electrical characterization of MOS structures with ultra thin gate oxideCLERC, R; GHIBAUDO, G.Proceedings - Electrochemical Society. 2003, pp 551-572, issn 0161-6374, isbn 1-56677-347-4, 22 p.Conference Paper

Dipoles in SiO2: Border traps or not?FLEETWOOD, D. M; RASHKEEV, S. N; LU, Z. Y et al.Proceedings - Electrochemical Society. 2003, pp 291-307, issn 0161-6374, isbn 1-56677-347-4, 17 p.Conference Paper

Si-SiO2 interface trap properties and depedence with oxide thickness and with electrical stress in mosfets with oxides in the 1-2 nanometer rangeBAUZA, D; RAHMOUNE, F.Proceedings - Electrochemical Society. 2003, pp 22-38, issn 0161-6374, isbn 1-56677-347-4, 17 p.Conference Paper

Physics and technology of high-k gate dielectrics II (Orlando FL, 12-16 October 2003)Kar, S; Misra, D; Houssa, M et al.Proceedings - Electrochemical Society. 2003, issn 0161-6374, isbn 1-56677-405-5, XVII, 490 p, isbn 1-56677-405-5Conference Proceedings

Novel germanium technology and devices for high performance mosfets and integrated on-chip optical clockingSARASWAT, Krishna C; CHI ON CHUI; MCINTYRE, Paul C et al.Proceedings - Electrochemical Society. 2003, pp 55-65, issn 0161-6374, isbn 1-56677-347-4, 11 p.Conference Paper

Charge trapping in high-dose Ge-implanted and Si-implanted silicon-dioxide thin filmsNAZAROV, A. N; OSIYUK, I. N; TYAGULSKII, I. P et al.Proceedings - Electrochemical Society. 2003, pp 144-149, issn 0161-6374, isbn 1-56677-347-4, 6 p.Conference Paper

Conduction modeling of thick double-layer nitride/oxide dielectricsEVSEEV, S.Proceedings - Electrochemical Society. 2003, pp 573-588, issn 0161-6374, isbn 1-56677-347-4, 16 p.Conference Paper

Analysis of short-channel mosfet behavior after gate oxide breakdown and its impact on digital circuit reliabilityGROESENEKEN, G; KACZER, B; DEGRAEVE, R et al.Proceedings - Electrochemical Society. 2003, pp 173-198, issn 0161-6374, isbn 1-56677-347-4, 26 p.Conference Paper

Properties of annealed silicon oxynitride layers for optical applicationsWÖRHOFF, K; HUSSEIN, G. M; ROELOFFZEN, C. G. H et al.Proceedings - Electrochemical Society. 2003, pp 406-417, issn 0161-6374, isbn 1-56677-347-4, 12 p.Conference Paper

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