Frequency stabilisation of semiconductor laser using Faraday effectNAKAGAWA, M; SATO, T; SHIMBA, M et al.Electronics Letters. 1989, Vol 25, Num 7, pp 430-432, issn 0013-5194, 3 p.Article

Semi-insulating InP:Fe regrowth by the hydride VPE technique around p-InP substrate laser mesas fabricated by reactive ion etchingLOURDUDOSS, S; NILSSON, S; BÄCKBOM, L et al.Journal of electronic materials. 1991, Vol 20, Num 12, pp 1025-1027, issn 0361-5235Conference Paper

Intensity noise of semiconductor laser in presence of arbitrary optical feedbackZHOU XING-SHA; YE PEIDA.Electronics Letters. 1989, Vol 25, Num 7, pp 446-447, issn 0013-5194, 2 p.Article

Multibranch frequency-selective reflectors and application to tunable single-mode semiconductor lasersMILLER, S. E.Journal of lightwave technology. 1989, Vol 7, Num 4, pp 666-673, issn 0733-8724, 8 p.Article

Pure frequency modulation or intensity modulation with suppressed frequency chirp using active Bragg reflector integrated laserGOOBAR, E; SCHATZ, R; BROBERG, B et al.Electronics Letters. 1989, Vol 25, Num 5, pp 304-305, issn 0013-5194, 2 p.Article

Extremely narrow linewidth (∼1 MHz) and high-power DFB lasers grown by MOVPEKONDO, Y; SATO, K; NAKAO, M et al.Electronics Letters. 1989, Vol 25, Num 3, pp 175-177, issn 0013-5194, 3 p.Article

Broad-area semiconductor lasers with gain-length variation for lateral mode control: the bow-tie geometry laserSHEEM, S. K; VOJAK, B. A.Journal of applied physics. 1988, Vol 63, Num 1, pp 248-250, issn 0021-8979Article

Nonlinear (self-focusing) limitations of output power in semiconductor lasers of various geometriesELISEEV, P. G; NABIEV, R. F.Journal de physique. III (Print). 1992, Vol 2, Num 9, pp 1691-1702, issn 1155-4320Article

Line shape functions of quantum-box lasersOHTOSHI, T; YAMANISHI, M.Japanese journal of applied physics. 1991, Vol 30, Num 8A, pp L1406-L1408, issn 0021-4922, 2Article

Cross-phase modulation in a semiconductor laser amplifier determined by a dispersive techniqueDIJAILI, S. P; WIESENFELD, J. M; RAYBON, G et al.IEEE journal of quantum electronics. 1992, Vol 28, Num 1, pp 141-150, issn 0018-9197Article

Reduction of distortion in analogue modulated semiconductor lasers by feedforward compensationFOCK, L. S; TUCKER, R. S.Electronics Letters. 1991, Vol 27, Num 8, pp 669-671, issn 0013-5194Article

Generation of 170 GHz optical sidebands of a single-mode semiconductor laser by nonlinear intracavity interactionNIETZKE, R; ELSÄSSER, W; BARANOV, A. N et al.Applied physics letters. 1991, Vol 58, Num 6, pp 554-556, issn 0003-6951Article

Frequency-domain method to measure mode partition characteristics of laser diodes modulated by NRZ codeMORI, M; KATSUNO, Y; NAGAYA, Y et al.Electronics Letters. 1989, Vol 25, Num 7, pp 443-444, issn 0013-5194, 2 p.Article

High-power, in-phase-mode operation from resonant phase-locked arrays of antiguided diode lasersMAWST, L. J; BOTEZ, D; ROTH, T. J et al.Applied physics letters. 1989, Vol 55, Num 1, pp 10-12, issn 0003-6951, 3 p.Article

1.3-μm GaInAsP/InP transverse-mode stabilized buried-crescent lasers by a new fabrication techniaue using a reactive ion beam etchingKASUKAWA, A; IWASE, M; MATSUMOTO, N et al.Journal of lightwave technology. 1989, Vol 7, Num 12, pp 2039-2045, issn 0733-8724Article

Narrow lobe emission of high power broad stripe laser in external resonator cavityGOLDBERG, L; WELLER, J. F.Electronics Letters. 1989, Vol 25, Num 2, pp 112-114, issn 0013-5194, 3 p.Article

Performance of packaged near-traveling-wave semiconductor laser amplifier with multilongitudinal mode inputEVANKOW, J. D; OLSSON, N. A; KU, R. T et al.Journal of lightwave technology. 1989, Vol 7, Num 1, pp 163-170, issn 0733-8724, 8 p.Article

Analysis of semiconductor laser arrays with high-intensity uniformityBUUS, J.IEEE journal of quantum electronics. 1988, Vol 24, Num 1, pp 22-28, issn 0018-9197Article

Aperture shared laser diode array beam combinerBEGLEY, D. L; CASEY, W. L; MARTIN, D. W et al.Applied optics. 1988, Vol 27, Num 13, pp 2685-2687, issn 0003-6935Article

Gain-controlled all-optical inverter switch in a semiconductor laser amplifierKOGA, M; TOKURA, N; NAWATA, K et al.Applied optics. 1988, Vol 27, Num 19, pp 3964-3965, issn 0003-6935Article

High-power and fundamental-mode oscillating flared SBA lasersSHIGIHARA, K; AOYAGI, T; HINATA, S et al.Electronics Letters. 1988, Vol 24, Num 18, pp 1182-1183, issn 0013-5194Article

Theory of signal degradation in semiconductor laser amplifiers with finite facet reflectivitiesCONNELLY, M. J; O'DOWD, R. F.IEEE journal of quantum electronics. 1991, Vol 27, Num 11, pp 2397-2403, issn 0018-9197Article

A novel structure of visible semiconductor lasersXIAOBO ZHANG; GUOTONG DU; ZHANG ZOU et al.Optical and quantum electronics. 1990, Vol 22, Num 4, pp 385-389, issn 0306-8919Article

Interaction of the dopants Mg and Si in Al_xGa_1-xAs/GaAs heterolayers (MOVPE) : application to DQW laser structuresKORTE, L; TREICHLER, R; SCHREIBER, M et al.Journal of crystal growth. 1990, Vol 107, Num 1-4, pp 779-783, issn 0022-0248Conference Paper

GaInAs/AlGaInAs DH and MQW lasers with 1.5-1.7 μm lasing wavelengths grown by atmospheric pressure MOVPEGESSNER, R; DRUMINSKI, M; BESCHORNER, M et al.Electronics Letters. 1989, Vol 25, Num 8, pp 516-517, issn 0013-5194, 2 p.Article