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Studies on structural, electrical and optical properties of multiferroic (Ag, Ni and In) codoped Bi0.9Nd0.1FeO3 thin filmsXU XUE; GUOQIANG TAN; GUOHUA DONG et al.Applied surface science. 2014, Vol 292, pp 702-709, issn 0169-4332, 8 p.Article

Courants de fuite et échange thermique dans un électrodialyseurGREBENYUK, V. D; IVANOV, A. I.Žurnal prikladnoj himii. 1985, Vol 58, Num 8, pp 1784-1788, issn 0044-4618Article

The dielectric properties of pulsed laser deposited SrTiO3 thin filmsHE, S. M; LI, D. H; DENG, X. W et al.Microelectronic engineering. 2003, Vol 66, Num 1-4, pp 891-895, issn 0167-9317, 5 p.Conference Paper

Effect of non-magnetic doping on leakage and magnetic properties of BiFeO3 thin filmsJIE WEI; DESHENG XUE.Applied surface science. 2011, Vol 258, Num 4, pp 1373-1376, issn 0169-4332, 4 p.Article

Effects of oxygen plasma treatment on the dielectric properties of Ba0.7Sr0.3TiO3 thin filmsLEFAN TAN; NIANDENG XIONG.Applied surface science. 2011, Vol 257, Num 7, pp 3088-3091, issn 0169-4332, 4 p.Article

Impact of post-nitridation annealing on ultra-thin gate oxide performanceYANDONG HE; GANGGANG ZHANG.Applied surface science. 2009, Vol 256, Num 1, pp 318-321, issn 0169-4332, 4 p.Article

Investigating the effects of the interface defects on the gate leakage current in MOSFETsMAO, Ling-Feng.Applied surface science. 2008, Vol 254, Num 20, pp 6628-6632, issn 0169-4332, 5 p.Article

Recessed source concept in nanoscale vertical surrounding gate (VSG) MOSFETs for controlling short-channel effectsSUBRAHMANYAM, B; JAGADESH KUMAR, M.Physica. E, low-dimentional systems and nanostructures. 2009, Vol 41, Num 4, pp 671-676, issn 1386-9477, 6 p.Article

Charle losses of N-doped trench cellsRISCH, L; MALY, R; BERGNER, W et al.Japanese journal of applied physics. 1988, Vol 27, Num 11, pp L2223-L2226, issn 0021-4922, part 2Article

Completely (001)-textured growth and electrical properties of Bi4Ti3O12/LaNiO3 heterostructures prepared by pulsed laser deposition on LaAlO3 single crystal substratesZHANG, X. J; ZHANG, S. T; CHEN, Y. F et al.Microelectronic engineering. 2003, Vol 66, Num 1-4, pp 719-725, issn 0167-9317, 7 p.Conference Paper

Shelf-life evaluation of aluminium electrolytic capacitorsGREASON, W. D; CRITCHLEY, J.IEEE transactions on components, hybrids, and manufacturing technology. 1986, Vol 9, Num 3, pp 293-299, issn 0148-6411Article

Analysis of the soft reverse characteristics of n+p drain diodesTHEUNISSEN, M. J. J; LIST, F. J.Solid-state electronics. 1985, Vol 28, Num 5, pp 417-425, issn 0038-1101Article

Measurement of the quasi-static C-V curves of an MIS structure in the presence of charge leakageMONDERER, B; LAKHANI, A. A.Solid-state electronics. 1985, Vol 28, Num 5, pp 447-451, issn 0038-1101Article

A HIGH-LEVEL TECHNIQUE FOR ESTIMATION AND OPTIMIZATION OF LEAKAGE POWER FOR FULL ADDERSHRIVAS, Jayram; AKASHE, Shy Am; TIWARI, Nitesh et al.International journal of nanoscience. 2013, Vol 12, Num 2, 1350011.1-1350011.6Article

New Test Structure to Monitor Contact-to-Poly Leakage in Sub-90 nm CMOS TechnologiesKING, Ming-Chu; CHIN, Albert.IEEE transactions on semiconductor manufacturing. 2008, Vol 21, Num 2, pp 244-247, issn 0894-6507, 4 p.Article

Improvement of interfacial adhesion in vertical GaN-based LEDs by introducing O2 plasma cleaning and intermediate layersKIM, Sunjung.Applied surface science. 2010, Vol 256, Num 13, pp 4157-4161, issn 0169-4332, 5 p.Article

Effects of vanadium doping on structure and electrical properties of SrBi4Ti4O15 thin filmsDO, Dalhyun; SANG SU KIM; JIN WON KIM et al.Applied surface science. 2009, Vol 255, Num 8, pp 4531-4535, issn 0169-4332, 5 p.Article

Tetra-phenyl porphyrin based thin film transistorsCHECCOLI, P; CONTE, G; SALVATORI, S et al.Synthetic metals. 2003, Vol 138, Num 1-2, pp 261-266, issn 0379-6779, 6 p.Conference Paper

Future prospects of DRAM: emerging alternativesCHOI, Yoonsuk; LATIFI, Shahram.International journal of high performance systems architecture (Print). 2012, Vol 4, Num 1, pp 1-12, issn 1751-6528, 12 p.Article

Investigation of Ta2O5 and TaSixOy thin films obtained by radio frequency plasma assisted laser ablation for gate dielectric applicationsFILIPESCU, M; ION, V; SOMACESCU, S et al.Applied surface science. 2013, Vol 276, pp 691-696, issn 0169-4332, 6 p.Article

PROPOSED PROCESS MODIFICATIONS FOR DYNAMIC BIPOLAR MEMORY TO REDUCE EMITTER-BASE LEAKAGE CURRENTANTIPOV I.1980; IEEE J. SOLID-STATE CIRCUITS; ISSN 0018-9200; USA; DA. 1980; VOL. 15; NO 4; PP. 714-719; BIBL. 14 REF.Article

LEAKAGE FACTOR AND BURST NOISE IN TRANSISTOR ARRAYS.KNOTT KF.1977; ELECTRON. LETTERS; G.B.; DA. 1977; VOL. 13; NO 18; PP. 523-524; BIBL. 1 REF.Article

Effect of annealing on the ac leakage components of the ZnO varistor. II, Capacitive currentGUPTA, T. K; STRAUB, W. D.Journal of applied physics. 1990, Vol 68, Num 2, pp 851-855, issn 0021-8979Article

Shielding of backgating effects in GaAs integrated circuitsLEE, C. P; CHANG, M. F.IEEE electron device letters. 1985, Vol 6, Num 4, pp 169-171, issn 0741-3106Article

Les fuites de courant dans les dispositifs électrochimiques haute tension avec des paramètres distribués dans les circuits de shuntageKOSHEL, N. D.Èlektrohimiâ. 1984, Vol 20, Num 7, pp 879-882, issn 0424-8570Article

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