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Results 1 to 25 of 6542

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Investigation of Ta2O5 and TaSixOy thin films obtained by radio frequency plasma assisted laser ablation for gate dielectric applicationsFILIPESCU, M; ION, V; SOMACESCU, S et al.Applied surface science. 2013, Vol 276, pp 691-696, issn 0169-4332, 6 p.Article

Water droplet behavior and discharge activity on silicone rubber surface energized by AC voltage (Part II)MIZUNO, Y; KURA, N; GONZALEZ, A et al.CEIDP : conference on electrical insulation and dielectric phenomena. 2002, pp 351-354, isbn 0-7803-7502-5, 4 p.Conference Paper

Characterization of the insulation and leakage currents of PV generators: Relevance for human safetyHERNANDEZ, J. C; VIDAL, P. G; MEDINA, A et al.Renewable energy. 2010, Vol 35, Num 3, pp 593-601, issn 0960-1481, 9 p.Article

Studies on structural, electrical and optical properties of multiferroic (Ag, Ni and In) codoped Bi0.9Nd0.1FeO3 thin filmsXU XUE; GUOQIANG TAN; GUOHUA DONG et al.Applied surface science. 2014, Vol 292, pp 702-709, issn 0169-4332, 8 p.Article

Electrical properties of thin Ta2O5 films obtained by thermal oxidation of Ta on SiATANASSOVA, E; SPASSOV, D.International conference on microelectronic. 1997, pp 613-616, isbn 0-7803-3664-X, 2VolConference Paper

Effect of non-magnetic doping on leakage and magnetic properties of BiFeO3 thin filmsJIE WEI; DESHENG XUE.Applied surface science. 2011, Vol 258, Num 4, pp 1373-1376, issn 0169-4332, 4 p.Article

Effects of oxygen plasma treatment on the dielectric properties of Ba0.7Sr0.3TiO3 thin filmsLEFAN TAN; NIANDENG XIONG.Applied surface science. 2011, Vol 257, Num 7, pp 3088-3091, issn 0169-4332, 4 p.Article

Impact of post-nitridation annealing on ultra-thin gate oxide performanceYANDONG HE; GANGGANG ZHANG.Applied surface science. 2009, Vol 256, Num 1, pp 318-321, issn 0169-4332, 4 p.Article

Investigating the effects of the interface defects on the gate leakage current in MOSFETsMAO, Ling-Feng.Applied surface science. 2008, Vol 254, Num 20, pp 6628-6632, issn 0169-4332, 5 p.Article

The dielectric properties of pulsed laser deposited SrTiO3 thin filmsHE, S. M; LI, D. H; DENG, X. W et al.Microelectronic engineering. 2003, Vol 66, Num 1-4, pp 891-895, issn 0167-9317, 5 p.Conference Paper

Courants de fuite et échange thermique dans un électrodialyseurGREBENYUK, V. D; IVANOV, A. I.Žurnal prikladnoj himii. 1985, Vol 58, Num 8, pp 1784-1788, issn 0044-4618Article

Modelling a junction diode in a two-dimensional arrayGOPAL, V.International journal of electronics. 1997, Vol 83, Num 2, pp 191-200, issn 0020-7217Article

Modification of pinch instability theory for analysis of spray mode in GMAWPARK, Ah-Young; KIM, Sun-Rak; HAMMAD, Muhammad A et al.Journal of physics. D, Applied physics (Print). 2009, Vol 42, Num 22, issn 0022-3727, 225503.1-225503.6Article

Appareils de contrôle de la sécurité électriqueLECONTE, André; KANTOROWSKI, Bernard.Techniques de l'ingénieur. Mesures et contrôle. 2004, Vol RE2, Num R1040, issn 0399-4147, R1040.1-R1040.26Article

Leakage current study of Si1-xCx embedded source/drain junctionsSIMOEN, E; VISSOUVANADIN, B; LU, J. P et al.Applied surface science. 2008, Vol 254, Num 19, pp 6140-6143, issn 0169-4332, 4 p.Conference Paper

Temperature dependencies of output characteristics of 1.3 μm InGaAsP/InP lasers with different profile of p-dopingDONETSKY, D. V; BELENKY, G. L; SHTENGEL, G. E et al.SPIE proceedings series. 1998, pp 423-431, isbn 0-8194-2722-5, 2VolConference Paper

Improvement of interfacial adhesion in vertical GaN-based LEDs by introducing O2 plasma cleaning and intermediate layersKIM, Sunjung.Applied surface science. 2010, Vol 256, Num 13, pp 4157-4161, issn 0169-4332, 5 p.Article

Effects of vanadium doping on structure and electrical properties of SrBi4Ti4O15 thin filmsDO, Dalhyun; SANG SU KIM; JIN WON KIM et al.Applied surface science. 2009, Vol 255, Num 8, pp 4531-4535, issn 0169-4332, 5 p.Article

Stress-induced leakage currents of the RF sputtered Ta2O5 on N-implanted siliconNOVKOVSKI, N; ATANASSOVA, E; PASKALEVA, A et al.Applied surface science. 2007, Vol 253, Num 9, pp 4396-4403, issn 0169-4332, 8 p.Article

Effect of anode and insulator materials on plasma focus sheath (pinch) currentSHYAM, A; ROUT, R. K.IEEE transactions on plasma science. 1997, Vol 25, Num 5, pp 1166-1168, issn 0093-3813Article

Tetra-phenyl porphyrin based thin film transistorsCHECCOLI, P; CONTE, G; SALVATORI, S et al.Synthetic metals. 2003, Vol 138, Num 1-2, pp 261-266, issn 0379-6779, 6 p.Conference Paper

A HIGH-LEVEL TECHNIQUE FOR ESTIMATION AND OPTIMIZATION OF LEAKAGE POWER FOR FULL ADDERSHRIVAS, Jayram; AKASHE, Shy Am; TIWARI, Nitesh et al.International journal of nanoscience. 2013, Vol 12, Num 2, 1350011.1-1350011.6Article

Future prospects of DRAM: emerging alternativesCHOI, Yoonsuk; LATIFI, Shahram.International journal of high performance systems architecture (Print). 2012, Vol 4, Num 1, pp 1-12, issn 1751-6528, 12 p.Article

Recessed source concept in nanoscale vertical surrounding gate (VSG) MOSFETs for controlling short-channel effectsSUBRAHMANYAM, B; JAGADESH KUMAR, M.Physica. E, low-dimentional systems and nanostructures. 2009, Vol 41, Num 4, pp 671-676, issn 1386-9477, 6 p.Article

New Test Structure to Monitor Contact-to-Poly Leakage in Sub-90 nm CMOS TechnologiesKING, Ming-Chu; CHIN, Albert.IEEE transactions on semiconductor manufacturing. 2008, Vol 21, Num 2, pp 244-247, issn 0894-6507, 4 p.Article

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