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Results 1 to 25 of 635

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Organic light-emitting devices with energy-level aligned double-buffer layersLU, Huei-Tzong; TSOU, Chuan-Cheng; YOKOYAMA, Meiso et al.Journal of crystal growth. 2006, Vol 289, Num 1, pp 161-163, issn 0022-0248, 3 p.Article

Preparation and characterization of a novel flexible substrate for OLEDHSIN HER YU; HWANG, Shug-June; HWANG, Kuo-Cheng et al.Optics communications. 2005, Vol 248, Num 1-3, pp 51-57, issn 0030-4018, 7 p.Article

Fabrication of high-performance 370 nm ultraviolet light-emitting diodesWANG, H. X; LI, H. D; LEE, Y. B et al.Journal of crystal growth. 2004, Vol 264, Num 1-3, pp 48-52, issn 0022-0248, 5 p.Article

Homoepitaxially grown GaN-based light-emitting diodes with peak emission at 405 nmCAO, X. A; YAN, C. H; D'EVELYN, M. P et al.Journal of crystal growth. 2004, Vol 269, Num 2-4, pp 242-248, issn 0022-0248, 7 p.Article

Top-emitting organic light-emitting devices based on silicon substrate using Ag electrodeZHIJUN WU; SHUFEN CHEN; HUISHAN YANG et al.Semiconductor science and technology. 2004, Vol 19, Num 9, pp 1138-1140, issn 0268-1242, 3 p.Article

Self-assembly surface modified indium-tin oxide anodes for single-layer light-emitting diodesMORGADO, Jorge; BARBAGALLO, Nunzio; CHARAS, Ana et al.Journal of physics. D, Applied physics (Print). 2003, Vol 36, Num 5, pp 434-438, issn 0022-3727, 5 p.Article

Improvement of light extraction efficiency of UV-LED grown on low-dislocation-density AlGaNIWAYA, M; TAKANAMI, S; MIYAZAKI, A et al.Physica status solidi. A. Applied research. 2003, Vol 200, Num 1, pp 110-113, issn 0031-8965, 4 p.Conference Paper

Equivalent circuit modeling of bilayer organic light emitting diodesYONG SOO LEE; PARK, Jae-Hoon; JONG SUN CHOI et al.Molecular crystals and liquid crystals (Philadelphia, Pa. : 2003). 2003, Vol 405, pp 53-58, issn 1542-1406, 6 p.Conference Paper

The RC2LED : A novel resonant-cavity LED design using a symmetric resonant cavity in the outcoupling reflectorBIENSTMAN, P; BAET, R.IEEE journal of quantum electronics. 2000, Vol 36, Num 6, pp 669-673, issn 0018-9197Article

Thin-film electroluminescent device physics modelingHITT, J. C; BENDER, J. P; WAGER, J. F et al.Critical reviews in solid state and materials sciences. 2000, Vol 25, Num 1, pp 29-85, issn 1040-8436Article

Electron and photon effects in imaging devices utilizing quantum dot infrared photodetectors and light emitting diodesRYZHII, Victor; KHMYROVA, Irina.SPIE proceedings series. 2000, pp 206-219, isbn 0-8194-3565-1Conference Paper

Color control in sulfide phosphors : Turning up the light for electroluminescent displaysDONG LI; CLARK, B. L; KESZLER, D. A et al.Chemistry of materials. 2000, Vol 12, Num 2, pp 268-270, issn 0897-4756Article

A comparison of the outcoupling characteristics of laterally emitting thin-film electroluminescent devicesBARROS, S. O; MIAS, C; THOMAS, C. B et al.Semiconductor science and technology. 2000, Vol 15, Num 8, pp 875-881, issn 0268-1242Article

Influence of the hole-carrier layer controlled by electrochemical method on electroluminescenceGUANGMING WANG; XIAO HU; WONG, T. K. S et al.SPIE proceedings series. 1999, pp 484-491, isbn 0-8194-3498-1Conference Paper

Efficient white light-emitting organic/polymeric electroluminescent deviceJINGSONG HUANG; KAIXIA YANG; ZHIYUAN XIE et al.SPIE proceedings series. 1999, pp 570-575, isbn 0-8194-3498-1Conference Paper

Development of metal containing polymers for optoelectronic applicationsWAI KIN CHAN; SIJIAN HOU; PO KING NG et al.SPIE proceedings series. 1999, pp 223-230, isbn 0-8194-3498-1Conference Paper

Highly efficient and bright doped organic electroluminescent diodes using an aluminum electrodeJINGSONG HUANG; ZHIYUAN XIE; KAIXIA YANG et al.Optical and quantum electronics. 1999, Vol 31, Num 12, pp 1227-1233, issn 0306-8919Article

The importance of low-temperature deposition of organic emitting layer on electroluminescent device performanceGU, J; XIAO, Z; XU, M et al.The Journal of physics and chemistry of solids. 1998, Vol 59, Num 1, pp 27-30, issn 0022-3697Article

Polymer light-emitting diode with ionic material as an electron injecting and hole blocking layerLEE, H.-M; CHOI, K.-H; HWANG, D.-H et al.Molecular crystals and liquid crystals science and technology. Section A, Molecular crystals and liquid crystals. 1998, Vol 316, pp 277-280, issn 1058-725XConference Paper

Charge injection into porous silicon electroluminescent devicesWAKEFIELD, G; DOBSON, P. J; HUTCHISON, J. L et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1998, Vol 51, Num 1-3, pp 141-145, issn 0921-5107Conference Paper

Gigahertz microcavity light emitters using resonant tunneling diodesVAN HOOF, C; DE NEVE, H; ROMANDIC, I et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1998, Vol 51, Num 1-3, pp 72-75, issn 0921-5107Conference Paper

Near field optical spectroscopy of resonant tunnelling light-emittersMIELANTS, M; VAN HOOF, C; STUER, C et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1998, Vol 51, Num 1-3, pp 9-11, issn 0921-5107Conference Paper

Luminescence conversion of blue light emitting diodesSCHLOTTER, P; SCHMIDT, R; SCHNEIDER, J et al.Applied physics. A, Materials science & processing (Print). 1997, Vol 64, Num 4, pp 417-418, issn 0947-8396Article

Violet GaN based light emitting diodes fabricated by metal organics vapour phase epitaxyBEAUMONT, B; HAFFOUZ, S; GIBART, P et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1997, Vol 50, Num 1-3, pp 296-301, issn 0921-5107Conference Paper

Investigation of an efficient YbF3/Al cathode for tris -(8-hydroxyquinoline)aluminum-based small molecular organic light-emitting diodesYANG LI; LIAN DUAN; QIAN LIU et al.Applied surface science. 2008, Vol 254, Num 22, pp 7223-7226, issn 0169-4332, 4 p.Article

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