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Crystal defects and strain of epitaxial inP layers laterally overgrown on SiLANKINEN, A; TUOMI, T; KARILAHTI, M et al.Crystal growth & design. 2006, Vol 6, Num 5, pp 1096-1100, issn 1528-7483, 5 p.Article

Interference effects in the electron microscopy of thin crystal foilsBOLLMANN, W.Philosophical magazine (2003. Print). 2006, Vol 86, Num 29-31, pp 4573-4574, issn 1478-6435, 2 p.Article

Diffuse elastic scattering of electrons by individual nanometer-sized dislocation loopsKIRK, M. A; JENKINS, M. L; ZHOU, Z et al.Philosophical magazine (2003. Print). 2006, Vol 86, Num 29-31, pp 4797-4808, issn 1478-6435, 12 p.Article

Study of threading dislocations in the plan-view sample of SiGe/Si(001) superlattices by transmission electron microscopyATICI, Yusuf.Journal of electronic materials. 2005, Vol 34, Num 5, pp 612-616, issn 0361-5235, 5 p.Article

Atomistic study of dislocation loop emission from a crack tipTING ZHU; JU LI; YIP, Sidney et al.Physical review letters. 2004, Vol 93, Num 2, pp 025503.1-025503.4, issn 0031-9007Article

Theoretical study of dislocation nucleation from simple surface defects in semiconductorsGODET, J; PIZZAGALLI, L; BROCHARD, S et al.Physical review B. Condensed matter and materials physics. 2004, Vol 70, Num 5, pp 054109.1-054109.8, issn 1098-0121Article

Generalized-stacking-fault energy and dislocation properties in bcc Fe: A first-principles studyYAN, Jia-An; WANG, Chong-Yu; WANG, Shan-Ying et al.Physical review B. Condensed matter and materials physics. 2004, Vol 70, Num 17, pp 174105.1-174105.5, issn 1098-0121Article

Basal plane partial dislocations in silicon carbideBLUMENAU, A. T; JONES, R; ÖBERG, S et al.Physica. B, Condensed matter. 2003, Vol 340-42, pp 160-164, issn 0921-4526, 5 p.Conference Paper

Structures of glide-set 90° partial dislocation cores in diamond cubic semiconductorsBECKMAN, S. P; CHRZAN, D. C.Physica. B, Condensed matter. 2003, Vol 340-42, pp 990-995, issn 0921-4526, 6 p.Conference Paper

The 60° dislocation in diamond and its dissociationBLUMENAU, A. T; JONES, R; FRAUENHEIM, T et al.Journal of physics. Condensed matter (Print). 2003, Vol 15, Num 39, pp S2951-S2960, issn 0953-8984Conference Paper

The Peierls-Nabarro model and the mobility of the dislocation lineJOOS, B; ZHOU, J.Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties. 2001, Vol 81, Num 5, pp 1329-1340, issn 1364-2804Article

Interaction of dislocations in Si with intrinsic defects : Viewpoint set no.24: Dislocation mobility in silicon organized by A. George & S. YipJONES, R; BLUMENAU, A. T.Scripta materialia. 2001, Vol 45, Num 11, pp 1253-1258, issn 1359-6462Article

Kinetic Monte Carlo study of dislocation motion in silicon : Soliton model and hydrogen enhanced glideSCARLE, S; MARTSINOVICH, N; EWELS, C. P et al.Physica. B, Condensed matter. 2001, Vol 308-10, pp 493-496, issn 0921-4526Conference Paper

Bottomless complexity of core structure and kink mechanisms of dislocation motion in silicon : Viewpoint set no.24: Dislocation mobility in silicon organized by A. George & S. YipBULATOV, Vasily V.Scripta materialia. 2001, Vol 45, Num 11, pp 1247-1252, issn 1359-6462Article

Identification of prismatic slip bands in 4H SiC boules grown by physical vapor transportSEOYONG HA; NUHFER, N. T; ROHRER, G. S et al.Journal of electronic materials. 2000, Vol 29, Num 7, pp L5-L8, issn 0361-5235Conference Paper

Characterization of grain-boundary dislocation networks by a combination of large-scale convergent-beam electron diffraction and weak-beam techniquesPOULAT, S; MORNIROLI, J. P; PRIESTER, L et al.Philosophical magazine letters. 2000, Vol 80, Num 7, pp 453-459, issn 0950-0839Article

Numerical study of the athermal annihilation of edge-dislocation dipolesASLANIDES, A; PONTIKIS, V.Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties. 2000, Vol 80, Num 10, pp 2337-2353, issn 1364-2804Article

Observation of glide dislocations in D020 ordered Al3NiYAMASHITA, K; FUJIMOTO, I; MURAKUMO, T et al.Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties. 2000, Vol 80, Num 1, pp 219-235, issn 1364-2804Article

An in-situ study of ordinary dislocation glide in γ-TiAl alloysCOURET, A.Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties. 1999, Vol 79, Num 8, pp 1977-1994, issn 1364-2804Article

Dislocation pileups in nanocrystalline materialsWEN QIN; ZHENHUA CHEN; PEIYUN HUANG et al.Journal of alloys and compounds. 1999, Vol 289, Num 1-2, pp 285-288, issn 0925-8388Article

On the possibility to predict dislocation structures of low Σ symmetric grain boundariesGEMPERLE, A; VYSTAVEL, T; GEMPERLOVA, J et al.Materials science forum. 1999, pp 393-396, issn 0255-5476, isbn 0-87849-823-0Conference Paper

Atomistic computation of the image force on a dislocation in a bicrystal. II. Case of a large difference between the elastic moduli of the two half-crystalsBEAUCHAMP, P; LEPINOUX, J.Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties. 1998, Vol 77, Num 3, pp 541-560, issn 1364-2804Article

Methods of dislocation distribution analysis and inclusion identification with application to CdTe and (Cd, Zn)TeROSET, D; DUROSE, K; PALOSZ, W et al.Journal of physics. D, Applied physics (Print). 1998, Vol 31, Num 8, pp 1009-1016, issn 0022-3727Article

Atomistics simulations of structures and properties of 1/2<110> dislocations using three different embedded-atom method potentials fit to γ-TiAlSIMMONS, J. P; RAO, S. I; DIMIDUK, D. M et al.Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties. 1997, Vol 75, Num 5, pp 1299-1328, issn 1364-2804Article

Gamma-ray diffractometry investigation of dislocation density in massive quartz crystalsKALASHNIKOVA, I. I; NAUMOV, V. S; KURBAKOV, A. I et al.Journal of crystal growth. 1997, Vol 177, Num 1-2, pp 57-60, issn 0022-0248Article

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