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Top-edge inaging in E-beam lithographyGILLESPIE, S. J.Solid state technology. 1983, Vol 26, Num 9, pp 174-176, issn 0038-111XArticle

Electron lithographyKING, H. N. G.Solid state technology. 1983, Vol 25, Num 2, pp 102-105, issn 0038-111XArticle

Synthesis of diffractive structuresKOTACKA, Libor; VIZDAL, Petr; BEHOUNEK, Tomas et al.Proceedings of SPIE, the International Society for Optical Engineering. 2011, Vol 8306, issn 0277-786X, isbn 978-0-8194-8953-1, 83060V.1-83060V.6Conference Paper

E-beam lithography: an efficient tool for the fabrication of diffractive and microoptical elementsKLEY, E.-B; SCHNABEL, B; ZEITNER, U. D et al.SPIE proceedings series. 1997, pp 222-232, isbn 0-8194-2419-6Conference Paper

Three-dimensional electron-beam resist profile simulatorMONIWA, A; YAMAGUCHI, H; OKAZAKI, S et al.Journal of vacuum science & technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena. 1992, Vol 10, Num 6, pp 2771-2775, issn 1071-1023Conference Paper

Fabrication and application of subwavelength gratingsSCHNABEL, B; KLEY, E.-B.SPIE proceedings series. 1997, pp 233-241, isbn 0-8194-2419-6Conference Paper

E-Beam direct wafer writing process using a water-soluble conductive layerWATANABE, H; TODOKORO, Y.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 3, pp 474-478, issn 0018-9383, 5 p.Article

A comprehensive test sequence for the electron beam exposure systemZAVECZ, T. E.Solid state technology. 1983, Vol 25, Num 2, pp 106-110, issn 0038-111XArticle

Pattern fidelity in submicron lithography with a rectangular electron beamOKUBO, T; TAKAMOTO, K.Japanese journal of applied physics. 1983, Vol 22, Num 8, pp 1335-1341, issn 0021-4922Article

Molecular glass photoresists for advanced lithographyDA YANG; SEUNG WOOK CHANG; OBER, Christopher K et al.Journal of material chemistry. 2006, Vol 16, Num 18, pp 1693-1696, issn 0959-9428, 4 p.Article

The application of the fullerene C60 thin films as an electron beam resist for micro- and nanolithographyGAEVSKI, M. E; ROTKINA, L. G; MAKAROVA, T. L et al.SPIE proceedings series. 1998, pp 382-385, isbn 0-8194-2776-4Conference Paper

Design of an accurate production E-bean systemFREYER, J. L; STANDIFORD, K. P.Solid state technology. 1983, Vol 26, Num 9, pp 165-170, issn 0038-111XArticle

High throughput variable shaped electron beam lithographyPIWCZYK, B. P; WILLIAMS, A. E.Solid state technology. 1983, Vol 26, Num 9, pp 145-152, issn 0038-111XArticle

Conducting electron beam resists based on polyanilineHUPCEY, M. A. Z; ANGELOPOULOS, M; GELORME, J. D et al.SPIE proceedings series. 1998, pp 369-374, isbn 0-8194-2776-4Conference Paper

Electron beam direct writing technology for fine gate patterningSATO, K; SHIRAI, S; HAYAKAWA, H et al.SPIE proceedings series. 1998, pp 326-333, isbn 0-8194-2776-4Conference Paper

Optimization of pattern shape in electron-beam cell projection lithographyEMA, T; YAMASHITA, H; NAKAJIMA, K et al.SPIE proceedings series. 1998, pp 464-470, isbn 0-8194-2776-4Conference Paper

Low-energy electron beam enhanced etching of Si(100)-(2×1) by molecular hydrogenGILLIS, H. P; CLEMONS, J. L; CHAMBERLAIN, J. P et al.Journal of vacuum science & technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena. 1992, Vol 10, Num 6, pp 2729-2733, issn 1071-1023Conference Paper

A process-compatible electron beam direct urite systemLIVESAY, W. R; GREENEICH, J. S; WOLFE, J. E et al.Solid state technology. 1983, Vol 26, Num 9, pp 137-139, issn 0038-111XArticle

E-beam system metrologySILLS, R. M; STANDIFORD, K. P.Solid state technology. 1983, Vol 26, Num 9, pp 191-196, issn 0038-111XArticle

EL systems: high throughput electron beam lithography toolsMOORE, R. D.Solid state technology. 1983, Vol 26, Num 9, pp 127-132, issn 0038-111XArticle

Nanocrossbar Arrays as Molecular SensorsPROKOPUK, Nicholas; SON, Kyung-Ah.Proceedings of SPIE, the International Society for Optical Engineering. 2010, Vol 7679, issn 0277-786X, isbn 978-0-8194-8143-6, 76791C.1-76791C.7Conference Paper

Advanced electron-beam pattern generation technology for 180 nm masksABBOUD, F; SAUER, C; WANG, W et al.SPIE proceedings series. 1998, pp 19-27, isbn 0-8194-2669-5Conference Paper

Photomask in-plane distortion induced during e-beam patterningSHAMOUN, B; SPRAGUE, M; ENGELSTAD, R et al.SPIE proceedings series. 1998, pp 275-279, isbn 0-8194-2776-4Conference Paper

Fabrication of damage free micropatterns in siliconGUPTA, R. P; DESHMUKH, P. R; KHOKLE, W. S et al.Microelectronics and reliability. 1984, Vol 24, Num 4, pp 623-624, issn 0026-2714Article

Electron lithography for the fabrication of microelectronic devicesOWEN, G.Reports on Progress in Physics (Print). 1985, Vol 48, Num 6, pp 795-851, issn 0034-4885Article

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