Pascal and Francis Bibliographic Databases

Help

Search results

Your search

kw.\*:("Litografía")

Filter

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Document Type [dt]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Publication Year[py]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Discipline (document) [di]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Language

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Author Country

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Results 1 to 25 of 11840

  • Page / 474
Export

Selection :

  • and

Prospects for x-ray lithographyFLEMING, D; MALDONADO, J. R; NEISSER, M et al.Journal of vacuum science & technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena. 1992, Vol 10, Num 6, pp 2511-2515, issn 1071-1023Conference Paper

Characterization of AZ PN114 resist for high resolution using electron-beam and soft-x-ray projection lithographiesEARLY, K; TENNANT, D. M; JEON, D. Y et al.Journal of vacuum science & technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena. 1992, Vol 10, Num 6, pp 2600-2605, issn 1071-1023Conference Paper

Principles of lithographyLevinson, Harry J.2001, isbn 0-8194-4045-0, X, 373 p, isbn 0-8194-4045-0Book

Three-dimensional electron-beam resist profile simulatorMONIWA, A; YAMAGUCHI, H; OKAZAKI, S et al.Journal of vacuum science & technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena. 1992, Vol 10, Num 6, pp 2771-2775, issn 1071-1023Conference Paper

Novel approach to zero-magnification x-ray mask replicationWELLS, G. M; KRASNOPEROVA, A; HAYTCHER, E. A et al.Journal of vacuum science & technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena. 1992, Vol 10, Num 6, pp 3221-3223, issn 1071-1023Conference Paper

Diffraction effects and image blurring in x-ray proximity printingDUBNER, A. D; WAGNER, A; LEVIN, J. P et al.Journal of vacuum science & technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena. 1992, Vol 10, Num 6, pp 3212-3216, issn 1071-1023Conference Paper

Helium field ion source for application in a 100 keV focused ion beam systemSAKATA, T; KUMAGAI, K; NAITOU, M et al.Journal of vacuum science & technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena. 1992, Vol 10, Num 6, pp 2842-2845, issn 1071-1023Conference Paper

Deformation of x-ray lithography masks during tool chuckingCHEN, A. C; MALDONADO, J. R.Journal of vacuum science & technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena. 1992, Vol 10, Num 6, pp 3208-3211, issn 1071-1023Conference Paper

Metal-less x-ray phase-shift masks for nanolithographyWHITE, V; CERRINA, F.Journal of vacuum science & technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena. 1992, Vol 10, Num 6, pp 3141-3144, issn 1071-1023Conference Paper

CXrL aligner : an experimental x-ray lithography system for quarter-micron feature devicesCHEN, G; WALLACE, J; NACHMAN, R et al.Journal of vacuum science & technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena. 1992, Vol 10, Num 6, pp 3229-3234, issn 1071-1023Conference Paper

Proximity effect reduction in x-ray mask making using thin silicon dioxide layersRHEE, K. W; MA, D. I; PECKERAR, M. C et al.Journal of vacuum science & technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena. 1992, Vol 10, Num 6, pp 3062-3066, issn 1071-1023Conference Paper

X-ray mask development based on SiC membrane and W absorberCHAKER, M; BOILY, S; HAGHIRI-GOSNET, A. M et al.Journal of vacuum science & technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena. 1992, Vol 10, Num 6, pp 3191-3195, issn 1071-1023Conference Paper

X-ray lithography with micropinch soft X-ray sourceGUREY, A. E; POLUKHIN, S. N; SEMENOV, O. G et al.Experimentelle Technik der Physik. 1990, Vol 38, Num 5-6, pp 519-522, issn 0014-4924Conference Paper

Impact of different x-ray mask substrate materials on optical alignmentFUENTES, R. I; PROGLER, C; BUKOFSKY, S et al.Journal of vacuum science & technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena. 1992, Vol 10, Num 6, pp 3204-3207, issn 1071-1023Conference Paper

Resolution limits in x-ray lithographyFELDMAN, M; SUN, J.Journal of vacuum science & technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena. 1992, Vol 10, Num 6, pp 3173-3176, issn 1071-1023Conference Paper

Characterization of chemically amplified resists for soft x-ray projection lithographyKUBIAK, G. D; KNEEDLER, E. M; HWANG, R. Q et al.Journal of vacuum science & technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena. 1992, Vol 10, Num 6, pp 2593-2599, issn 1071-1023Conference Paper

Effect of acid diffusion on resolution of a chemically amplified resist in X-ray lithographyNAKAMURA, J; BAN, H; DEGUCHI, K et al.Japanese journal of applied physics. 1991, Vol 30, Num 10, pp 2619-2625, issn 0021-4922, 1Article

Electron beam lithography system with new correction techniquesTAKAHASHI, Y; YAMADA, A; OAE, Y et al.Journal of vacuum science & technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena. 1992, Vol 10, Num 6, pp 2794-2798, issn 1071-1023Conference Paper

Experimental and theoretical study of image bias in x-ray lithographyGUO, J. Z. Y; LEONARD, Q; CERRINA, F et al.Journal of vacuum science & technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena. 1992, Vol 10, Num 6, pp 3150-3154, issn 1071-1023Conference Paper

Repair of opaque defects on reflection masks for soft x-ray projection lithographyHAWRYLUK, A. M; STEWART, D.Journal of vacuum science & technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena. 1992, Vol 10, Num 6, pp 3182-3185, issn 1071-1023Conference Paper

Emerging lithographic technologies III (Santa Clara CA, 15-17 March 1999)Vladimirsky, Yuli.SPIE proceedings series. 1999, isbn 0-8194-3150-8, 2Vol, XVII, 864 p, isbn 0-8194-3150-8Conference Proceedings

Comparative mobility degradation in modulation-doped GaAs devices after e-beam and x-ray irradiationGHANBARI, R. A; BURKHARDT, M; ANTONIADIS, D. A et al.Journal of vacuum science & technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena. 1992, Vol 10, Num 6, pp 2890-2892, issn 1071-1023Conference Paper

Untersuchung von aufgedampften (Ge-Se)-Schichten als Resist für die Mikrolithographie = Investigation sur les couches vaporisées (Ge-Se) comme resist en microlithogravure = Investigation on Ge-Se vaporized films as Resist in microlithographyTHOMAS, A; KLUGE, G; SÜPTITZ, P et al.Journal of information recording materials (1985). 1988, Vol 16, Num 4, pp 265-273, issn 0863-0453Article

Low voltage alternative for electron beam lithographyLEE, Y.-H; BROWNING, R; MALUF, N et al.Journal of vacuum science & technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena. 1992, Vol 10, Num 6, pp 3094-3098, issn 1071-1023Conference Paper

Next generation lithography mask development at the NGL mask center of competencyLERCEL, M; BROOKS, C; TRYBENDIS, M et al.SPIE proceedings series. 1999, pp 804-813, isbn 0-8194-3468-X, 2VolConference Paper

  • Page / 474