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Subthreshold transconductance in the long-channel MOSFETSCHRIMPF, R. D; JU, D.-H; WARNER, R. M. JR et al.Solid-state electronics. 1987, Vol 30, Num 10, pp 1043-1048, issn 0038-1101Article

The influence of degeneracy in the channel on long-channel MOSFET characteristicsMAJKUSIAK, B; JAKUBOWSKI, A; ŁUKASIAK, L et al.I.E.E.E. transactions on electron devices. 1987, Vol 34, Num 12, pp 2560-2561, issn 0018-9383Article

Organic fouling development in a long channel RO membrane cellMO, H; NG, H. Y.Water science and technology : water supply (Print). 2010, Vol 10, Num 4, pp 672-678, issn 1606-9749, 7 p.Article

A non-quasi-static analysis of the transient behavior of the long-channel most valid in all regions of operationMANCINI, P; TURCHETTI, C; MASETTI, G et al.I.E.E.E. transactions on electron devices. 1987, Vol 34, Num 2, pp 325-334, issn 0018-9383Article

MOSFET model continuous from weak to strong inversionABU-ZEID, M. M; DE JONG, G. G.Electronics Letters. 1987, Vol 23, Num 24, pp 1299-1300, issn 0013-5194Article

A threshold voltage model of short-channel fully-depleted recessed-source/drain (Re-S/D) UTB SOI MOSFETs including substrate induced surface potential effectsKUMAR, Ajit; PRAMOD KUMAR TIWARI.Solid-state electronics. 2014, Vol 95, pp 52-60, issn 0038-1101, 9 p.Article

Effect of body bias on negative bias temperature instability in pMOSFET with SiON gate dielectricsHYOJUNE KIM; YONGHAN ROH.Solid-state electronics. 2014, Vol 91, pp 127-129, issn 0038-1101, 3 p.Article

Investigation of the threshold voltage turn-around effect in long-channel n-MOSFETs due to hot-carrier stressSTARKOV, I. A; STARKOV, A. S.Microelectronics and reliability. 2014, Vol 54, Num 1, pp 33-36, issn 0026-2714, 4 p.Article

Node and Symbol Power Allocation in Time-Varying Amplify-and-Forward Dual-Hop Relay ChannelsMOHAMMADI, Mohammadali; SADEGHI, Parastoo; ARDEBILIPOUR, Mehrdad et al.IEEE transactions on vehicular technology. 2013, Vol 62, Num 1, pp 432-439, issn 0018-9545, 8 p.Article

Origin of the low-frequency noise in n-channel FinFETsTHEODOROU, C. G; FASARAKIS, N; HOFFMAN, T et al.Solid-state electronics. 2013, Vol 82, pp 21-24, issn 0038-1101, 4 p.Article

The fabrication and the reliability of poly-Si MOSFETs using ultra-thin high-K/metal-gate stackLEE, M. H; CHEN, K.-J.Solid-state electronics. 2013, Vol 79, pp 244-247, issn 0038-1101, 4 p.Article

Design and Performance Analysis of Passively Extended XG-PON With CWDM UpstreamKIM, Jongdeog; BANG, Hakjeon; PARK, Chang-Soo et al.Journal of lightwave technology. 2012, Vol 30, Num 9-12, pp 1677-1684, issn 0733-8724, 8 p.Article

Electrical Characteristics of Top-Down ZnO Nanowire Transistors Using Remote Plasma ALDSULTAN, S. M; SUN, K; CLARK, O. D et al.IEEE electron device letters. 2012, Vol 33, Num 2, pp 203-205, issn 0741-3106, 3 p.Article

Ultrathin Body GaN-on-Insulator Quantum Well FETs With Regrown Ohmic ContactsGUOWANG LI; RONGHUA WANG; HUILI XING et al.IEEE electron device letters. 2012, Vol 33, Num 5, pp 661-663, issn 0741-3106, 3 p.Article

Gate-edge charges related effects and performance degradation in advanced multiple-gate MOSFETsKILCHYTSKA, V; ALVARADO, J; COLLAERT, N et al.Solid-state electronics. 2011, Vol 59, Num 1, pp 18-24, issn 0038-1101, 7 p.Conference Paper

Modeling short-channel effects in channel thermal noise and induced-gate noise in MOSFETs in the NQS regimeVALLUR, Sunil; JINDAL, R. P.Solid-state electronics. 2009, Vol 53, Num 1, pp 36-41, issn 0038-1101, 6 p.Article

Sub-threshold behavior of long channel undoped cylindrical surrounding-gate MOSFETsWEI BIAN; JIN HE; LINING ZHANG et al.Microelectronics and reliability. 2009, Vol 49, Num 8, pp 897-903, issn 0026-2714, 7 p.Article

Accurate Extraction of Effective Channel Length and Source/Drain Series Resistance in Ultrashort-Channel MOSFETs by Iteration MethodKIM, Junsoo; LEE, Jaehong; SONG, Ickhyun et al.I.E.E.E. transactions on electron devices. 2008, Vol 55, Num 10, pp 2779-2784, issn 0018-9383, 6 p.Article

Universal compact model for long-and short-channel Thin-Film TransistorsINIGUEZ, Benjamin; PICOS, Rodrigo; VEKSLER, Dmitry et al.Solid-state electronics. 2008, Vol 52, Num 3, pp 400-405, issn 0038-1101, 6 p.Conference Paper

A carrier-based approach for compact modeling of the long-channel undoped symmetric double-gate MOSFETsJIN HE; FENG LIU; JIAN ZHANG et al.I.E.E.E. transactions on electron devices. 2007, Vol 54, Num 5, pp 1203-1209, issn 0018-9383, 7 p.Article

A test structure to analyze electrical CMOSFET reliabilities between center and edge along the channel widthOHZONE, Takashi; ISHII, Eiji; MORISHITA, Takayuki et al.IEICE transactions on electronics. 2007, Vol 90, Num 2, pp 515-522, issn 0916-8524, 8 p.Article

Analytic carrier-based charge and capacitance model for long-channel undoped surrounding-gate MOSFETsJIN HE; WEI BIAN; YADONG TAO et al.I.E.E.E. transactions on electron devices. 2007, Vol 54, Num 6, pp 1478-1485, issn 0018-9383, 8 p.Article

Electrical properties of nMOSFETs using the NiSi :Yb FUSI electrodeYU, H. Y; LAUWERS, A; DEMEURISSE, C et al.IEEE electron device letters. 2007, Vol 28, Num 2, pp 154-156, issn 0741-3106, 3 p.Article

A continuous analytic I-V model for long-channel undoped ultra-thin-body silicon-on-insulator (UTB-SOI) MOSFETs from a carrier-based approachJIN HE; MANSUN CHAN; GANGGANG ZHANG et al.Semiconductor science and technology. 2006, Vol 21, Num 3, pp 261-266, issn 0268-1242, 6 p.Article

Influence of crystal orientation and body doping on trigate transistor performanceLANDGRAF, E; RÖSNER, W; SPECHT, M et al.Solid-state electronics. 2006, Vol 50, Num 1, pp 38-43, issn 0038-1101, 6 p.Conference Paper

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