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Growth mechanism of Sm2BaCuO5 crystal fiberXIN ZHANG; XIAOJING WU; XIN YAO et al.Materials characterization. 2004, Vol 53, Num 1, pp 1-6, issn 1044-5803, 6 p.Article

Hopping atoms in crystal growthHUMPHREYS, C. J.Nature (London). 1985, Vol 317, Num 6032, issn 0028-0836, 16Article

Mathematical modelling processes of crystals growth CdZnTe for physical transport in inert gasMELNIKOV, A. A; KULCHITSKY, N. A; KULCHITSKY, A. N et al.Proceedings of SPIE, the International Society for Optical Engineering. 2005, pp 289-293, issn 0277-786X, isbn 0-8194-5828-7, 1Vol, 5 p.Conference Paper

Atomic layer epitaxy of III-V compounds : chemistry and applications : Chemical vapor depositionUSUI, A.Proceedings of the IEEE. 1992, Vol 80, Num 10, pp 1641-1653, issn 0018-9219Article

Wireless Underground Sensor Networks: System in Support of Future Agriculture : DESIGN AND FABRICATION OF MICROSCALE AND NANOSCALE DEVICES FOR APPLICATIONS IN ENERGY, ENVIRONMENT, AND MEDICINEVURAN, Mehmet C; XIN DONG; PRESTON, Kurt et al.Journal of nanotechnology in engineering and medicine (Print). 2013, Vol 4, Num 2, issn 1949-2944, 020906.1-020906.3Article

An Updated Review of Synthesis Parameters and Growth Mechanisms for Carbon Nanotubes in Fluidized BedsMACKENZIE, Kieran J; DUNENS, Oscar M; HARRIS, Andrew T et al.Industrial & engineering chemistry research. 2010, Vol 49, Num 11, pp 5323-5338, issn 0888-5885, 16 p.Article

Phenomena and Kinetics of Solid-State Polymorphic Transition of CaffeineKISHI, Yoshifumi; MATSUOKA, Masakuni.Crystal growth & design. 2010, Vol 10, Num 7, pp 2916-2920, issn 1528-7483, 5 p.Article

The 7th International Workshop on Modeling in Crystal GrowthLAN, Chung-wen; CHEN, Jyh-Chen; ZHANG, Hui et al.Journal of crystal growth. 2014, Vol 385, issn 0022-0248, 160 p.Conference Proceedings

Graphite-like thin sheets with even-numbered layersNAKAMURA, Maki; KAWAI, Takazumi; IRIE, Michiko et al.Carbon (New York, NY). 2013, Vol 61, pp 644-647, issn 0008-6223, 4 p.Article

Integrated framework for the numerical solution of multicomponent population balances. 1. Formulation, representation, and growth mechanismsOBRIGKEIT, Darren D; MCRAE, Gregory J.Industrial & engineering chemistry research. 2004, Vol 43, Num 15, pp 4380-4393, issn 0888-5885, 14 p.Article

A novel approach towards silicon nanotechnologyDAS, Debajyoti.Journal of physics. D, Applied physics (Print). 2003, Vol 36, Num 19, pp 2335-2346, issn 0022-3727, 12 p.Article

Controlling crystal growthHUMPHREYS, C.Nature (London). 1989, Vol 342, Num 6244, issn 0028-0836, 689Article

Reconciliation of 1/d corrections to the Eden modelFRIEDBERG, R; ZHENG, W. M.Physical review. A, General physics. 1988, Vol 38, Num 3, pp 1636-1637, issn 0556-2791, 2 p.Article

Processing and Pore Growth Mechanisms in Aluminum Gasarites Produced by Thermal DecompositionLICAVOLI, Joseph J; SANDERS, Paul G.Metallurgical and materials transactions. A, Physical metallurgy and materials science. 2014, Vol 45, Num 2, pp 911-917, issn 1073-5623, 7 p.Article

Connectivity of Phases and Growth Mechanisms in Peritectic Alloys Solidified at Low Speed: an X-Ray Tomography Study of Cu-SnRAPPAZ, M; KOHLER, F; VALLOTON, J et al.Metallurgical and materials transactions. A, Physical metallurgy and materials science. 2010, Vol 41, Num 3, pp 563-567, issn 1073-5623, 5 p.Article

A growth mark method for studying growth mechanism of carbon nanotube arraysKAI LIU; KAILI JIANG; CHEN FENG et al.Carbon (New York, NY). 2005, Vol 43, Num 14, pp 2850-2856, issn 0008-6223, 7 p.Article

Bubble growth mechanism in carbon foamsBEECHEM, Thomas; LAFDI, Khalid; ELGAFY, Ahmed et al.Carbon (New York, NY). 2005, Vol 43, Num 5, pp 1055-1064, issn 0008-6223, 10 p.Article

Optimisation du processus de croissance des corps élastiquesDROZDOV, A. D.Prikladnaâ mehanika i tehničeskaâ fizika. 1988, Vol 172, Num 6, pp 156-160, issn 0869-5032Article

Growth of CdS nanowire crystals: Vapor―liquid―solid versus vapor―solid mechanismsGRYNKO, D. A; FEDORYAK, A. N; DIMITRIEV, O. P et al.Surface & coatings technology. 2013, Vol 230, pp 234-238, issn 0257-8972, 5 p.Conference Paper

Stability of aperiodic crystalsJANSSEN, Ted.Zeitschrift für Kristallographie. 2008, Vol 223, Num 11-12, pp 742-746, issn 0044-2968, 5 p.Conference Paper

Solid state growth mechanisms for carbon nanotubesHARRIS, Peter J. F.Carbon (New York, NY). 2007, Vol 45, Num 2, pp 229-239, issn 0008-6223, 11 p.Article

Simulations of nucleation of single-walled carbon nanotubesCHENGLIN LUO; HEWU YU; YIQUAN ZHANG et al.Physica status solidi. A, Applications and materials science (Print). 2007, Vol 204, Num 2, pp 555-562, issn 1862-6300, 8 p.Conference Paper

Dependence of SWNT growth mechanism on temperature and catalyst particle size : Bulk versus surface diffusionFENG DING; ROSEN, Arne; BOLTON, Kim et al.Carbon (New York, NY). 2005, Vol 43, Num 10, pp 2215-2217, issn 0008-6223, 3 p.Article

Growth mechanism for discontinuous precipitation in a multi-component (Fe-Cr-Mn-N) systemSANTHI SRINIVAS, N. C; KUTUMBARAO, V. V.Scripta materialia. 2004, Vol 51, Num 11, pp 1105-1109, issn 1359-6462, 5 p.Article

The influence of solvent on CuInS2 semiconductor nanocrystals synthesis and growth under solvothermal conditionsNYARI, Terezia; BARVINSCHI, P; VLAZAN, Paulina et al.International Semiconductor Conference. 2004, pp 445-448, isbn 0-7803-8499-7, 4 p.Conference Paper

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