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kw.\*:("Mémoire ferroélectrique")

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Novel integration technologies for highly manufacturable 32Mb FRAMKIM, H. H; SONG, Y. J; LEE, S. W et al.Symposium on VLSI technology. 2002, pp 210-211, isbn 0-7803-7312-X, 2 p.Conference Paper

AN EXPANDABLE FERROELECTRIC RANDOM ACCESS MEMORYKAUFMAN AB.1973; I.E.E.E. TRANS. COMPUTERS; U.S.A.; DA. 1973; VOL. 22; NO 2; PP. 154-158; BIBL. 3 REF.Serial Issue

A NEW LONGITUDINAL DISPLAY MODE FOR CERAMIC ELECTROOPTIC DEVICESHAERTLING GH; MCCAMPBELL CB.1972; PROC. I.E.E.E.; U.S.A.; DA. 1972; VOL. 60; NO 4; PP. 450-451; BIBL. 10 REF.Serial Issue

RENVERSEMENT IRREVERSIBLE ET LOCALISE DE LA POLARISATION SPONTANEE DU SULFATE DE GLYCOCOLLE A L'AIDE D'UN FAISCEAU LASER, APPLICATION AUX MEMOIRES FERROELECTRIQUESHADNI A; THOMAS R.1972; OPT. COMMUNIC.; NETHERL.; DA. 1972; VOL. 6; NO 4; PP. 314-316; ABS. ANGL.; BIBL. 11 REF.Serial Issue

The electrode and inter-connection for ferroelectric memory devicesTAKASU, H.IEEE 1999 international interconnect technology conference. 1999, pp 6-8, isbn 0-7803-5174-6Conference Paper

A SMALL ANALOG MEMORY BASED ON FERROELECTRIC HYSTERESIS. = UNE PETITE MEMOIRE ANALOGIQUE BASEE SUR L'HYSTERESIS FERROELECTRIQUEPETERSEN A; SCHNABEL P; SCHWEPPE H et al.1977; PHILIPS TECH. REV.; NETHERL.; DA. 1977; VOL. 37; NO 213; PP. 51-55; BIBL. 1 REF.Article

A NEW FERROELECTRIC MEMORY DEVICE, METAL-FERROELECTRISEMICONDUCTOR TRANSITOR.SHU YAU WU.1974; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1974; VOL. 21; NO 8; PP. 499-504; BIBL. 28 REF.Article

MEMOIRES A BULLES MAGNETIQUES: VERS LES 15 MEGABITS/CM2LILEN H.1979; ELECTRON. APPL. INDUSTR.; FRA; DA. 1979; NO 274; PP. 49-52Article

Operation of single transistor type ferroelectric random access memorySHIM, S. I; KIM, S.-I; KIM, Y. T et al.Electronics Letters. 2004, Vol 40, Num 22, pp 1397-1398, issn 0013-5194, 2 p.Article

Mechanism for slow programming in advanced low-voltage, high-speed ferroelectric memoryLAI, S. C; TSAI, C. W; LIU, Rich et al.International Symposium on the Physical & Failure Analysis of Integrated Circuits. 2004, pp 123-126, isbn 0-7803-8454-7, 1Vol, 4 p.Conference Paper

Future 1T1C FRAM technologies for highly reliable, high density FRAMLEE, S. Y; KIM, Kinam.IEDm : international electron devices meeting. 2002, pp 547-550, isbn 0-7803-7462-2, 4 p.Conference Paper

Relaxor-based thin film memories and the depolarizing field problemMARQUES, Manuel I; ARAGO, Carmen.Physica status solidi. A, Applications and materials science (Print). 2007, Vol 204, Num 6, pp 1962-1967, issn 1862-6300, 6 p.Conference Paper

Real information storage using ferroelectrics with a density of 1 TBIT/INCHTANAKA, K; HIRANAGA, Y; CHO, Y et al.Ferroelectrics (Print). 2006, Vol 340, pp 99-105, issn 0015-0193, 7 p.Conference Paper

Material aspects in emerging nonvolatile memoriesPINNOW, Cay-Uwe; MIKOLAJICK, Thomas.Journal of the Electrochemical Society. 2004, Vol 151, Num 6, pp K13-K19, issn 0013-4651Article

Recent progress of ferroelectric memoriesISHIWARA, Hiroshi.International journal of high speed electronics and systems. 2002, Vol 12, Num 2, pp 315-323, 9 p.Conference Paper

A pulse-based, parallel-element macromodel for ferroelectric capacitors : Applications of ferroelectricitySHEIKHOLESLAMI, A; GULAK, P. G; TAKAUCHI, H et al.IEEE transactions on ultrasonics, ferroelectrics, and frequency control. 2000, Vol 47, Num 4, pp 784-791, issn 0885-3010Article

Material aspects in emerging nonvolatile memoriesMIKOLAJICK, Thomas; PINNOW, Cay-Uwe.Proceedings - Electrochemical Society. 2003, pp 290-304, issn 0161-6374, isbn 1-56677-346-6, 15 p.Conference Paper

Terabit per square inch information data storage on ferroelectrics with low bit error rateHIRANAGA, Y; TANAKA, K; CHO, Y et al.Ferroelectrics (Print). 2006, Vol 333, pp 99-106, issn 0015-0193, 8 p.Conference Paper

FERROELECTRIC FILMS AND THEIR DEVICE APPLICATIONSFRANCOMBE MH.1972; THIN SOLID FILMS; NETHERL.; DA. 1972; VOL. 13; NO 2; PP. 413-433; BIBL. 40 REF.Serial Issue

LES MATERIAUX FERROELECTRIQUESBUSCH M; MORIN D; PATEAU L et al.1972; ECHO RECH.; FR.; DA. 1972; NO 69; PP. 17-26; ABS. ANGL.; BIBL. 9 REF.Serial Issue

Ferroelectric random access memory based on one-transistor-one-capacitor structure for flexible electronicsMAO, D; MEJIA, I; SALAS-VILLASENOR, A. L et al.Organic electronics (Print). 2013, Vol 14, Num 2, pp 505-510, issn 1566-1199, 6 p.Article

Scaling Issues in Ferroelectric Barium Strontium Titanate Tunable Planar CapacitorsLAM, Peter G; HARIDASAN, Vrinda; ZHIPING FENG et al.IEEE transactions on ultrasonics, ferroelectrics, and frequency control. 2012, Vol 59, Num 2, pp 198-204, issn 0885-3010, 7 p.Article

A Scalable Shield-Bitline-Overdrive Technique for Sub-1.5 V Chain FeRAMsTAKASHIMA, Daisaburo; SHIGA, Hidehiro; WATANABE, Yohji et al.IEEE journal of solid-state circuits. 2011, Vol 46, Num 9, pp 2171-2179, issn 0018-9200, 9 p.Article

Electrical properties of metal-ferroelectric-insulator-semiconductor structure using BaxSr1-xTiO3 for ferroelectric-gate field effect transistorSAIF, Ala'eddin A; POOPALAN, P.Solid-state electronics. 2011, Vol 62, Num 1, pp 25-30, issn 0038-1101, 6 p.Article

Effects of electrodes on the properties of sol―gel PZT based capacitors in FeRAMZHANG, Ming-Ming; ZE JIA; REN, Tian-Ling et al.Solid-state electronics. 2009, Vol 53, Num 5, pp 473-477, issn 0038-1101, 5 p.Article

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