Enhanced energy resolution (²²Na, ¹³⁷Cs and ²⁴¹Am) and alpha-gamma (²⁴¹Am + ⁶⁰Co) and neutron-gamma (²⁴¹Am-Be) pulse shape discrimination properties of p-terphenyl crystals prepared by modified selective self-seeded vertical Bridgman technique (SSVBT)SELVAKUMAR, S; ARULCHAKKARAVARTHI, A; KUMAR, Rakesh et al.Solid state communications. 2008, Vol 145, Num 9-10, pp 482-486, issn 0038-1098, 5 p.Article

EFFECT OF INDIUM ON CRYSTALLISATION OF SELENIUM.SIRDESHMUKH DB; BHASKER RAO T.1975; CURR. SCI.; INDIA; DA. 1975; VOL. 44; NO 14; PP. 515-516; BIBL. 4 REF.Article

THREE-ZONE BRIDGMAN-STOCKBARGER CRYSTAL GROWTH FURNACEMIKKELSEN JC JR.1980; REV. SCI. INSTRUM.; ISSN 0034-6748; USA; DA. 1980; VOL. 51; NO 11; PP. 1564-1566; BIBL. 9 REF.Article

THE GROWTH AND PERFECTION OF PHENANTHRENE SINGLE CRYSTALS. I. PURIFICATION AND SINGLE CRYSTAL GROWTH.MCARDLE BJ; SHERWOOD JN; DAMASK AC et al.1974; J. CRYST. GROWTH; NETHERL.; DA. 1974; VOL. 22; NO 3; PP. 193-200; BIBL. 26 REF.Article

THE GROWTH OF MAGNESIUM GERMANIDE CRYSTALS.SHANKS HR.1974; J. CRYST. GROWTH; NETHERL.; DA. 1974; VOL. 23; NO 3; PP. 190-194; BIBL. 7 REF.Article

EIN EINFACHES VERFAHREN ZUR HERSTELLUNG REINER UN DOTIERTER CDF₂-KRISTALLE = PROCEDE SIMPLE DE PREPARATION DE CRISTAUX DE CDF₂ PURS ET DOPESBRINK E; BECKER D; TELTOW J et al.1972; KRISTALL U. TECH.; DTSCH.; DA. 1972; VOL. 7; NO 10; PP. 1101-1108; ABS. ANGL.; BIBL. 16 REF.Serial Issue

GROWING OPTICAL GRADE LITHIUM FLUORIDE SINGLE CRYSTALS USING A BRIDGEMAN-TYPE VACUUM FURNACE.RAO SMD; BHIDE GK.1974; INDIAN J. PURE APPL. PHYS.; INDIA; DA. 1974; VOL. 12; NO 5; PP. 358-361; BIBL. 5 REF.Article

THE GROWTH OF MNF₂ SINGLE CRYSTALS FROM THE MELT.WEINBERG E; SRINIVASAN NK.1974; J. CRYST. GROWTH; NETHERL.; DA. 1974; VOL. 26; NO 2; PP. 210-214; BIBL. 10 REF.Article

The horizontal Bridgman methodRUDOLPH, P; KIESSLING, F. M.Crystal research and technology (1979). 1988, Vol 23, Num 10-11, pp 1207-1224, issn 0232-1300Article

Programming the crystallization rate along a Bridgman test tubeCABRIC, B; ARNAUT, S; CVJETKOVIC, V et al.Crystal research and technology (1979). 1997, Vol 32, Num 3, issn 0232-1300, p. 485Article

Boundary conditions for radiative heat transfer in monocrystal growth processes in ampules : 2. A semitransparent quartz ampule, Bridgman's method, and the traveling-heater methodFRYAZINOV, I. V.Computational mathematics and mathematical physics. 1997, Vol 37, Num 11, pp 1341-1355, issn 0965-5425Article

A space-qualified cartridge for crystal growth experiments on Ge-SiMÖLLER, U; HELMERS, L; BAHR, G et al.Microgravity, science and technology. 1994, Vol 7, Num 1, pp 68-69, issn 0938-0108Article

A new Bridgman process for single crystal growth based on control of distributed parameter systemITO, Y; KATOH, N.Kagaku kōgaku ronbunshū. 1994, Vol 20, Num 2, pp 288-292, issn 0386-216XArticle

The growth of single crystals of KFeS₂ and RbFeS₂ by the Bridgman methodARGUELLO, Z; TORRIANI, I; FURTADO, N. C et al.Journal of crystal growth. 1984, Vol 67, Num 3, pp 483-485, issn 0022-0248Article

Heat transfer measurements in the Bridgman configurationROSCH, W; FRIPP, A; DEBNAM, W et al.Journal of crystal growth. 1994, Vol 137, Num 1-2, pp 54-58, issn 0022-0248Conference Paper

Marangoni convection around voids in Bridgman growthNAUMANN, R. J.Journal of crystal growth. 1995, Vol 154, Num 1-2, pp 156-162, issn 0022-0248Article

Modellization and numerical simulation for bulk crystal growth processesDUFFAR, T; BARAT, C; NABOT, J.-P et al.Materials science & engineering. A, Structural materials : properties, microstructure and processing. 1993, Vol 173, Num 1-2, pp 15-18, issn 0921-5093Conference Paper

Crystal growth of bulk and cored fibre of 4-(N,N-dimethylamino)-3-acetamidonitrobenzene (DAN)GONG-FAN HUANG; HWANG, M.-Y; LIN, J. T et al.Journal of materials science. 1992, Vol 27, Num 12, pp 3200-3202, issn 0022-2461Article

Crystal growth of KCl in a reactive atmosphere II: the crystal growth techniquePASTOR, A. C; PASTOR, R. C.Materials research bulletin. 1984, Vol 19, Num 9, pp 1195-1199, issn 0025-5408Article

A simple programming of the crystallization rate from the meltCABRIC, B; PAVLOVIC, T; SAVOVIC, S et al.Crystal research and technology (1979). 1994, Vol 29, Num 7, pp K96-K97, issn 0232-1300Article

A new apparatus for the controlled growth of single crystals by horizontal Bridgman techniquesPARSEY, J. M. JR; THIEL, F. A.Journal of crystal growth. 1985, Vol 73, Num 2, pp 211-220, issn 0022-0248Article

One-dimensional thermal modeling of vertical Bridgman-type crystal growthJASINSKI, T; NAUMANN, R. J.Journal of crystal growth. 1984, Vol 66, Num 2, pp 469-471, issn 0022-0248Article

Computation of stress in bridgman crystalsHUAMG, C. E; ELWELL, D; FEIGELSON, R. S et al.Journal of crystal growth. 1984, Vol 69, Num 2-3, pp 275-280, issn 0022-0248Article

Growth of large ultratransparent KCl single crystalsURSU, I; NISTOR, S. V; VODA, M. M et al.Materials research bulletin. 1983, Vol 18, Num 10, pp 1275-1282, issn 0025-5408Article

Fabrication et caractérisation de couches minces de Cu(Ga,In) (Se,Te)₂ par évaporation éclair = Fabrication and characterization of Cu(Ga,In) (Se,Te)₂ thin solid films by flash evaporationSudibyo, Uno Bintang; Guastavino, Francis; Gouskov, Alexandre et al.1991, 133 p.Thesis