Growth shape control of group-III nitrides by selective area MOVPEKOBAYASHI, N; AKASAKA, T; ANDO, S et al.SPIE proceedings series. 1998, pp 2-6, isbn 0-8194-2873-6Conference Paper

Large optical nonlinearities in the band gap region of GaN thin films grown by MOCVD on sapphireSCHMIDT, T. J; CHANG, Y. C; SONG, J. J et al.SPIE proceedings series. 1998, pp 61-67, isbn 0-8194-2873-6Conference Paper

Future challenges for MOVPE: an industrial perspectiveBLAND, S. W.Journal of materials science. Materials in electronics. 2002, Vol 13, Num 11, pp 679-682, issn 0957-4522, 4 p.Article

High-temperature stimulated emission studies of MOCVD-grown GaN filmsBIDNYK, S; LITTLE, B. D; SCHMIDT, T. J et al.SPIE proceedings series. 1998, pp 35-43, isbn 0-8194-2873-6Conference Paper

Kinetic studies on thermal decomposition of MOVPE sources using fourier transform infrared spectroscopySUGIYAMA, M; KUSUNOKI, K; SHIMOGAKI, Y et al.Applied surface science. 1997, Vol 117-18, pp 746-752, issn 0169-4332Conference Paper

Fabrication of YBa₂Cu₃O_7-x film by metalorganic deposition method using trifluoroacetates and its process conditionsARAKI, Takeshi; YAMAGIWA, Katsuya; HIRABAYASHI, Izumi et al.Cryogenics (Guildford). 2001, Vol 41, Num 9, pp 675-681, issn 0011-2275Article

MOCVD epitaxy of GaAs/Ge heterostructuresKRUPANIDHI, S. B; HUDAIT, M. K; MODAK, P et al.SPIE proceedings series. 1998, pp 262-270, isbn 0-8194-2756-X, 2VolConference Paper

MOVPE of III/V semiconductors using nitrogen as the carrier gasHARDTDEGEN, H.SPIE proceedings series. 1998, pp 244-251, isbn 0-8194-2756-X, 2VolConference Paper

Large scale manufacturing of compound semiconductors by MOVPETHOMPSON, A. G; STALL, R. A; KROLL, W et al.Journal of crystal growth. 1997, Vol 170, Num 1-4, pp 92-96, issn 0022-0248Conference Paper

Effects of substrate temperature upon the properties of ZnMgTe layer grown by MOVPESAITO, K; INOUE, Y; HAYASHIDA, Y et al.Applied surface science. 2012, Vol 258, Num 6, pp 2136-2139, issn 0169-4332, 4 p.Conference Paper

In-situ characterization of epitaxial semiconductor growth by reflectance anisotropy spectroscopyBHATTACHARYA, A; HABERLAND, K; POSER, F et al.SPIE proceedings series. 2002, pp 990-995, isbn 0-8194-4500-2, 2VolConference Paper

MOCVD technology for the production of highly efficient GaAlP/GaAs/Ge solar cellsBECCARD, R; PROTZMANN, H; SCHMITZ, D. A et al.SPIE proceedings series. 1998, pp 70-77, isbn 0-8194-2873-6Conference Paper

Photoluminescence of Zn- and Si-doped GaAs epitaxial layers grown by MOCVDHUDAIT, M. K; MODAK, P; HARDIKAR, S et al.SPIE proceedings series. 1998, pp 312-316, isbn 0-8194-2756-X, 2VolConference Paper

Growth of Fe doped semi-insulating InP by LP-MOCVDYAN, X; ZHU, H; WANG, Q et al.SPIE proceedings series. 1998, pp 80-83, isbn 0-8194-3012-9Conference Paper

Visible vertical cavity surface emitting laserCHENG, P; MA, X; GAO, J et al.SPIE proceedings series. 1998, pp 121-126, isbn 0-8194-3008-0Conference Paper

High quality inp epitaxial growth using flow rate modulation metalorganic chemical vapor depositionLEE, M. K; HU, C. C.International journal of high speed electronics and systems. 1997, Vol 8, Num 4, pp 575-586Conference Paper

Epitaxial growth on porous GaAs substratesGRYM, Jan; NOHAVICA, Dušan; GLADKOV, Petar et al.Comptes rendus. Chimie. 2013, Vol 16, Num 1, pp 59-64, issn 1631-0748, 6 p.Article

Submicron resolution X-ray diffraction from periodically patterned GaAs nanorods grown onto Ge[111]DAVYDOK, Anton; BIERMANNS, Andreas; PIETSCH, Ullrich et al.Physica status solidi. A, Applications and materials science (Print). 2009, Vol 206, Num 8, pp 1704-1708, issn 1862-6300, 5 p.Conference Paper

Origin of non-radiative center of gainnas grown by movpeYAMADA, T; ISHIZUKA, T; SAWAMURA, A et al.International Conference on Indium Phosphide and Related Materials. 2004, pp 36-39, isbn 0-7803-8595-0, 1Vol, 4 p.Conference Paper

Planarized selective regrowth of InP:Fe by LP-MOVPE using tertiarybutylchloride for high-speed modulator devicesPARASKEVOPOULOS, A; FRANKE, D; HARDE, P et al.International Conference on Indium Phosphide and Related Materials. 2004, pp 122-125, isbn 0-7803-8595-0, 1Vol, 4 p.Conference Paper

Metalorganic chemical vapor deposition of Cu films from bis(t-butyl-3-oxo-butanoato)copper(II): thermodynamic investigation and experimental verificationMUKHOPADHYAY, Sukanya; SHALINI, K; LAKSHMI, R et al.Surface & coatings technology. 2002, Vol 150, Num 2-3, pp 205-211, issn 0257-8972Article

MOCVD of palladium films: kinetic aspects and film propertiesWUNDER, V. K; SCHMID, S; POPOVSKA, N et al.Surface & coatings technology. 2002, Vol 151-52, pp 96-99, issn 0257-8972Conference Paper

Thermal effects on the growth by metal organic chemical vapour deposition of TiO₂ thin films on (100) GaAs substratesBREVET, A; FABREGUETTE, F; IMHOFF, L et al.Surface & coatings technology. 2002, Vol 151-52, pp 36-41, issn 0257-8972Conference Paper

Radiative recombination in type II GaSb/GaAs quantum dotsBORN, H; MÜLLER-KIRSCH, L; HEITZ, R et al.Physica status solidi. B. Basic research. 2001, Vol 228, Num 3, pp R4-R5, issn 0370-1972Article

Infrared studies on GaN single crystals and homoepitaxial layersFRAYSSINET, E; KNAP, W; PRYSTAWKO, P et al.Journal of crystal growth. 2000, Vol 218, Num 2-4, pp 161-166, issn 0022-0248Article