Electron-beam-induced current and photoetching investigations of dislocations and impurity atmospheres in n-type liquid-encapsulated Czochralski GaAsFRIGERI, C; WEYHER, J. L.Journal of applied physics. 1989, Vol 65, Num 12, pp 4646-4653, issn 0021-8979, 8 p.Article

Conditions of existence and character of the temperature fluctuations during Czochralski growth of oxide single crystalsILIEV, K; BERKOWSKI, M; NIKOLOV, V et al.Journal of crystal growth. 1991, Vol 108, Num 1-2, pp 219-224, issn 0022-0248Article

A new design for a UHV compatible Czochralski crystal growth systemBROWN, S. A; HOWARD, B. K; BROWN, S. V et al.Review of scientific instruments. 1990, Vol 61, Num 9, pp 2427-2429, issn 0034-6748Article

Influence of In-doping on dislocations in liquid encapsulated Czochralski (LEC) grown gallium arsenideWU, J; MO, P. G; WANG, G. Y et al.Journal of crystal growth. 1990, Vol 102, Num 4, pp 701-705, issn 0022-0248Article

The role of silicon self-interstitial supersaturation in the retardation of oxygen precipitation in Czochralski siliconROGERS, W. B; MASSOUD, H. Z; FAIR, R. B et al.Journal of applied physics. 1989, Vol 65, Num 11, pp 4215-4219, issn 0021-8979, 5 p.Article

Float-zone and Czochralski crystal growth and diagnostic solar cell evaluation of a new solar-grade feedstock sourceCISZEK, T. F; PAGE, M. R; WANG, T. H et al.sans titre. 2002, pp 210-213, isbn 0-7803-7471-1, 4 p.Conference Paper

Melt motion in a Czochralski puller with a weak transverse magnetic fieldWILLIAMS, M. G; WALKER, J. S; LANGLOIS, W. E et al.Journal of crystal growth. 1990, Vol 100, Num 1-2, pp 233-253, issn 0022-0248Article

Four test problems for the numerical simulation of flow in Czochralski crystal growthWHEELER, A. A.Journal of crystal growth. 1990, Vol 102, Num 4, pp 691-695, issn 0022-0248Article

Analysis of the dynamics of the controlled crystallization process using the czochralski methodSATUNKIN, G. A; ROSSOLENKO, S. N.Crystal research and technology (1979). 1986, Vol 21, Num 9, pp 1125-1138, issn 0232-1300Article

Weighing control of the automatic crystallization process from the meltSATUNKIN, G. A; LEONOV, A. G.Journal of crystal growth. 1990, Vol 102, Num 3, pp 592-608, issn 0022-0248Article

A thermal model for Czorchralski silicon crystal growth with an axial magnetic fieldHJELLMING, L. N.Journal of crystal growth. 1990, Vol 104, Num 2, pp 327-344, issn 0022-0248Article

Transient regimes in the growth of large-diameter crystalsNALBANDYAN, G. H; NEMENOV, V. A.Crystal research and technology (1979). 1988, Vol 23, Num 4, pp 577-581, issn 0232-1300Article

Ultimate limitation on Czochralski pull rate due to constitutional supercoolingLEE, H. H.Journal of the Electrochemical Society. 1987, Vol 134, Num 4, pp 971-975, issn 0013-4651Article

On the dynamics of Czochralski crystal growthDERBY, J. J; BROWN, R. A.Journal of crystal growth. 1987, Vol 83, Num 1, pp 137-151, issn 0022-0248Article

Internal heat transfer in Czochralski grown silicon crystalsWALLACE, J. P; TIEN, J. K; STEFANI, J. A et al.Journal of applied physics. 1991, Vol 69, Num 1, pp 550-552, issn 0021-8979Article

Atomic structure of twinss in GaAsBYUNG-TEAK LEE; JEONG YONG LEE; BOURRET, E. D et al.Applied physics letters. 1990, Vol 57, Num 4, pp 346-347, issn 0003-6951Article

Dislocation multiplication in GaAs: inhibition by dopingDJEMEL, A; CASTAING, J; BURLE-DURBEC, N et al.Revue de physique appliquée. 1989, Vol 24, Num 8, pp 779-793, issn 0035-1687, 15 p.Article

Numerical simulations of Czochralski silicon growthCHAN, Y. T; GIBELING, H. J; GRUBIN, H. L et al.Journal of applied physics. 1988, Vol 64, Num 3, pp 1425-1439, issn 0021-8979Article

Formation and annihilation of the metastable defect in boron-doped Czochralski siliconSCHMIDT, Jan; BOTHE, Karsten; HEZEL, Rudolf et al.sans titre. 2002, pp 178-181, isbn 0-7803-7471-1, 4 p.Conference Paper

Effects of conventional and rapid thermal annealing on minority carrier diffusion length in float zone and Czochralski silicon crystalsBARHDADI, A; AMZIL, H; M'GAFAD, N et al.Journal of alloys and compounds. 1992, Vol 188, pp 221-224, issn 0925-8388Conference Paper

Infrared study of oxygen precipitates in Czochralski grown siliconBORGHESI, A; GEDDO, M; PIVAC, B et al.Journal of applied physics. 1991, Vol 69, Num 10, pp 7251-7255, issn 0021-8979, 5 p.Article

A novel technique to reduce the concentration of carbon in LEC gallium arsenideMARSHALL, H. D; DECUIR, D. W.Journal of crystal growth. 1991, Vol 110, Num 4, pp 960-962, issn 0022-0248Article

On the inherent stability of the Czochralski crystal growth processJOHANSEN, T. H.Journal of crystal growth. 1991, Vol 114, Num 1-2, pp 27-30, issn 0022-0248Article

Effects of total liquid encapsulation on the characteristics of GaAs single crystals grown by the vertical gradient freeze techniqueBOURRET, E. D; MERK, E. C.Journal of crystal growth. 1991, Vol 110, Num 3, pp 395-404, issn 0022-0248Article

Formation and behavior of B_GaV_As complex defects in gallium arsenide grown by liquid-encapsulated Czochralski methodORITO, F; FUJII, K; OKADA, Y et al.Journal of applied physics. 1990, Vol 68, Num 11, pp 5696-5699, issn 0021-8979Article