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Electronic stopping powers in silicon carbideZHANG, Y; WEBER, W. J; WANG, C. M et al.Physical review B. Condensed matter and materials physics. 2004, Vol 69, Num 20, pp 205201.1-205201.9, issn 1098-0121Article

Charge selective contact on ultra-thin In(OH)_xS_y/Pb(OH)_xS_y heterostructure prepared by SILARGAVRILOV, S; OJA, I; LIM, B et al.Physica status solidi. A, Applications and materials science (Print). 2006, Vol 203, Num 5, pp 1024-1029, issn 1862-6300, 6 p.Article

High-rate deposition of nanocrystalline silicon using the expanding thermal plasma techniqueKESSELS, W. M. M; HOUSTON, I. J; NADIR, K et al.Journal of non-crystalline solids. 2006, Vol 352, Num 9-20, pp 915-918, issn 0022-3093, 4 p.Conference Paper

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Compositional analysis of SiO_xN_y:H films by heavy-ion ERDA: the problem of radiation damageBOHNE, W; FUHS, W; RÖHRICH, J et al.Surface and interface analysis. 2002, Vol 34, Num 1, pp 749-753, issn 0142-2421Conference Paper

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Deuteron implantation into hexagonal silicon carbide: defects and deuterium behaviourSHIRYAEV, A; VAN VEEN, A; RIVERA, A et al.EPJ. Applied physics (Print). 2003, Vol 23, Num 1, pp 11-18, issn 1286-0042, 8 p.Conference Paper

Erbium doping into silicate glasses to form luminescent optical layers for photonics applicationsSALAVCOVA, Linda; MACKOVA, Anna; OSWALD, Jiri et al.The Journal of physics and chemistry of solids. 2007, Vol 68, Num 5-6, pp 891-895, issn 0022-3697, 5 p.Conference Paper

Effect of nanoparticle nature on hydrogen concentration profiles and improved switching characteristics in Gd switchable mirrorsARUNA, I; MEHTA, B. R; MALHOTRA, L. K et al.Journal of nanoscience and nanotechnology (Print). 2005, Vol 5, Num 10, pp 1728-1733, issn 1533-4880, 6 p.Article

Characterization of nitrogen-rich silicon nitride films grown by the electron cyclotron resonance plasma techniqueWANG, L; REEHAL, H. S; MARTINEZ, F. L et al.Semiconductor science and technology. 2003, Vol 18, Num 7, pp 633-641, issn 0268-1242, 9 p.Article

Depth profiles and resolution limits in accelerator-based solid state analysisFISCHER, R.Analytical and bioanalytical chemistry. 2002, Vol 374, Num 4, pp 619-625, 7 p.Conference Paper

Hydrogen permeation through silicon nitride filmsNEMANIC, Vincenc; MCGUINESS, Paul J; DANEU, Nina et al.Journal of alloys and compounds. 2012, Vol 539, pp 184-189, issn 0925-8388, 6 p.Article

Characterization of oxide films by MeV ion beam techniques : Oxide surfaceDÖBELI, M.Journal of physics. Condensed matter (Print). 2008, Vol 20, Num 26, issn 0953-8984, 264010.1-264010.7Article

Hydrogen and oxygen concentration analysis of porous siliconKRZYGANOWSKA, H; KOBZEV, A. P; ZUK, J et al.Journal of non-crystalline solids. 2008, Vol 354, Num 35-39, pp 4367-4374, issn 0022-3093, 8 p.Conference Paper

Spectroscopic study of defects and inclusions in bulk poly- and nanocrystalline diamond aggregatesSHIRYAEV, A. A; IAKOUBOVSKII, K; GRAMBOLE, D et al.Journal of physics. Condensed matter (Print). 2006, Vol 18, Num 40, issn 0953-8984, L493-L501Article

Measurements of the electrical resistance and the hydrogen depth distribution for Ni₆₀Nb₂₀Zr₂₀ amorphous alloy before and after hydrogen chargingNAKANO, Sumiaki; OHTSU, Naofumi; NAGATA, Shinji et al.Solid state communications. 2005, Vol 133, Num 8, pp 511-513, issn 0038-1098, 3 p.Article

Measured stopping power for ¹⁶O ions in Al, Cu and Ag foilsXITING LU; TAO ZHENG; ZONGHUANG XIA et al.Applied surface science. 2004, Vol 221, Num 1-4, pp 10-12, issn 0169-4332, 3 p.Article

Mobility and retention of implanted hydrogen in Ti225 titanium alloyWANG, T; GRAMBOLE, D; GRÖTZSCHEL, R et al.Surface & coatings technology. 2002, Vol 158-59, pp 139-145, issn 0257-8972Conference Paper

MgZnO synthesis employing weak oxidants for accurate Mg incorporation controlZHANG, T. C; VENKATACHALAPATHY, V; AZAROV, A. Yu et al.Journal of crystal growth. 2011, Vol 333, Num 1, pp 66-69, issn 0022-0248, 4 p.Article

Understanding of Hybriding Mechanisms of Zircaloy-4 Alloy during Corrosion in PWR Simulated Conditions and Influence of Zirconium Hybrides on Zircaloy-4 CorrosionBISOR-MELLOUL, C; TUPIN, M; BOSSIS, P et al.Revue générale nucléaire (Paris). 2011, Num 2, pp 111-116, issn 0335-5004, 6 p.Article

Role of impurities and dislocations for the unintentional n-type conductivity in InNDARAKCHIEVA, V; BARRADAS, N. P; TU, L. W et al.Physica. B, Condensed matter. 2009, Vol 404, Num 22, pp 4476-4481, issn 0921-4526, 6 p.Conference Paper

Helium-charged La-Ni-Al thin films deposited by magnetron sputteringLIQUN SHI; DEMING CHEN; SHILIN XU et al.Fusion science and technology. 2005, Vol 48, Num 1, pp 534-538, 5 p.Conference Paper